INTEGRATED CIRCUITS DATA SHEET TEA1093 Hands-free IC Product specification Supersedes data of 1995 May 18 File under Integrated Circuits, IC03 1996 Feb 09 Philips Semiconductors Product specification Hands-free IC TEA1093 FEATURES APPLICATIONS • Line powered supply with: • Line-powered telephone sets with hands-free/listening-in functions. – adjustable stabilized supply voltage – power down function GENERAL DESCRIPTION • Microphone channel with: The TEA1093 is a bipolar circuit intended for use in line-powered telephone sets. In conjunction with a member of the TEA1060 family or PCA1070 transmission circuits, the device offers a hands-free function for line powered telephone sets. It incorporates a supply, a microphone channel, a loudspeaker channel and a duplex controller with signal and noise monitors on both channels. – externally adjustable gain – microphone mute function • Loudspeaker channel with: – externally adjustable gain – dynamic limiter to prevent distortion – rail-to-rail output stages for single-ended or bridge-tied load drive – logarithmic volume control via linear potentiometer – loudspeaker mute function • Duplex controller consisting of: – signal envelope and noise envelope monitors for both channels with: externally adjustable sensitivity externally adjustable signal envelope time constant externally adjustable noise envelope time constant – decision logic with: externally adjustable switch-over timing externally adjustable idle mode timing externally adjustable dial tone detector in receive channel – voice switch control with: adjustable switching range constant sum of gain during switching constant sum of gain at different volume settings. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TEA1093 DIP28 plastic dual in-line package; 28 leads (600 mil) SOT117-1 TEA1093T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1 1996 Feb 09 2 Philips Semiconductors Product specification Hands-free IC TEA1093 QUICK REFERENCE DATA VSREF = 4.2 V; VGND = 0 V; ISUP = 15 mA; VSUP = 0 V (RMS); f = 1 kHz; Tamb = 25 °C; PD = LOW; MUTET = LOW; RL = 50 Ω; RVOL = 0 Ω; measured in test circuit of Fig.15; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ISUP operating supply current (pin SUP) 7 − 140 mA VBB stabilized supply voltage 3.35 3.6 3.85 V IBB(pd) current consumption from pin VBB in power-down condition PD = HIGH; VBB = 3.6 V − 400 550 µA ISUP(pd) current consumption from pin SUP in power-down condition PD = HIGH; Vsup = 4.5 V − 55 75 µA Gvtx voltage gain from pin MIC to pin MOUT in transmit mode VMIC = 1 mV (RMS); RGAT = 30.1 kΩ 12.5 15 17.5 dB ∆Gvtxr voltage gain adjustment with RGAT −10 − +10 dB Gvrx voltage gain in receive mode 15.5 18 20.5 dB 21.5 24 26.5 dB −15 − +15 dB − 5.15 − V the difference between RIN1 and RIN2 to LSP1 or LSP2 single-ended load VRIN = 20 mV (RMS); RGAR = 66.5 kΩ; RL = 50 Ω the difference between RIN1 and RIN2 to the difference between LSP1 and LSP2 bridge-tied load ∆Gvrxr voltage gain adjustment with RGAR VO(p-p) bridge-tied load (peak-to-peak value) SWRA switching range − 40 − dB ∆SWRA switching range adjustment with RSWR referenced to RSWR = 365 kΩ −40 − +12 dB Tamb operating ambient temperature −25 − +75 °C VRIN = 150 mV (RMS); RL = 33 Ω; note 1 Note 1. Corresponds to 100 mW output power. 1996 Feb 09 3 Philips Semiconductors Product specification Hands-free IC TEA1093 BLOCK DIAGRAM handbook, full pagewidth to TEA106X 9 SUP SUPPLY TR1 to dynamic limiter TR2 315 mV to TEA106X VBB CMIC 7 V SREF 19 MUTET 22 MIC 28 TSEN PD 17 VA 15 GND 8 GAT 21 MOUT 20 MICGND 18 IDT 16 POWER DOWN MICROPHONE CHANNEL V I I V RMIC RTSEN 10 VOLTAGE STABILIZER SWITCH V VBB LOG SWT BUFFER 27 RIDT Vref TEA1093 CTENV RGAT to TEA106X DUPLEX CONTROLLER CTSEN CVBB 14 CSWT TENV 13 mV CTNOI 26 TNOI 23 RNOI CRNOI BUFFER ATTENUATOR BUFFER LOGIC 24 RENV CLSP1 CDLC RSTAB SWR 12 RSWR RIN1 2 from TEA106X RIN2 3 from TEA106X VOL 11 VOICE SWITCH 13 mV 25 RSEN 5 GAR 6 from voltage stabilizer LSP1 1 DLC/ MUTER LOG Vdt CRSEN RGAR 13 BUFFER CRENV RRSEN STAB 4 LSP2 2 V I I V DYNAMIC LIMITER VOLUME CONTROL −1 RVOL LOUDSPEAKER CHANNEL MGD216 Fig.1 Block diagram. 1996 Feb 09 4 Philips Semiconductors Product specification Hands-free IC TEA1093 PINNING SYMBOL PIN DESCRIPTION DLC/MUTER 1 dynamic limiter timing adjustment, receiver channel mute input RIN1 2 receiver amplifier input 1 RIN2 3 receiver amplifier input 2 LSP2 4 loudspeaker amplifier output 2 GAR 5 receiver gain adjustment LSP1 6 loudspeaker amplifier output 1 SREF 7 supply reference input GND 8 ground reference SUP 9 supply input VBB 10 VOL handbook, halfpage DLC/MUTER 1 28 TSEN RIN1 2 27 TENV stabilized supply output RIN2 3 26 TNOI 11 receiver volume adjustment LSP2 4 25 RSEN SWR 12 switching range adjustment GAR 5 24 RENV STAB 13 reference current adjustment LSP1 6 23 RNOI SWT 14 switch-over timing adjustment SREF 7 VA 15 VBB voltage adjustment IDT 16 idle mode timing adjustment PD 17 power-down input MICGND 18 ground reference for the microphone amplifier MUTET 19 transmit channel mute input MOUT 20 microphone amplifier output GAT 21 microphone gain adjustment MIC 22 microphone input RNOI 23 receive noise envelope timing adjustment RENV 24 receive signal envelope timing adjustment RSEN 25 receive signal envelope sensitivity adjustment TNOI 26 transmit noise envelope timing adjustment TENV 27 transmit signal envelope timing adjustment TSEN 28 transmit signal envelope sensitivity adjustment 1996 Feb 09 22 MIC TEA1093 GND 8 21 GAT SUP 9 20 MOUT VBB 10 19 MUTET VOL 11 18 MICGND SWR 12 17 PD STAB 13 16 IDT SWT 14 15 VA MGD217 Fig.2 Pin configuration. 5 Philips Semiconductors Product specification Hands-free IC TEA1093 this would be the case. The loop-gain has to be much lower than 1 and therefore has to be decreased to avoid howling. This is achieved by the duplex controller.The duplex controller of the TEA1093 detects which channel has the ‘largest’ signal and then controls the gain of the microphone amplifier and the loudspeaker amplifier so that the sum of the gains remains constant. As a result, the circuit can be in three stable modes: FUNCTIONAL DESCRIPTION The values given in the functional description are typical values except when otherwise specified. A principle diagram of the TEA106X is shown on the left side of Fig.3. The TEA106X is a transmission circuit of the TEA1060 family intended for hand-set operation. It incorporates a receiving amplifier for the earpiece, a transmit amplifier for the microphone and a hybrid. For more details on the TEA1060 family, please refer to “Data Handbook IC03”. The right side of Fig.3 shows a principle diagram of the TEA1093, a hands-free add-on circuit with a microphone amplifier, a loudspeaker amplifier and a duplex controller. 1. Transmit mode (Tx mode): the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. 2. Receive mode (Rx mode): the gain of the loudspeaker amplifier is at its maximum and the gain of the microphone amplifier is at its minimum. As can be seen from Fig.3, a loop is formed via the sidetone network in the transmission circuit and the acoustic coupling between loudspeaker and microphone of the hands-free circuit. When this loop gain is greater than 1, howling is introduced. In a full duplex application, 3. Idle mode: the gain of the amplifiers is halfway between their maximum and minimum value. The difference between the maximum gain and minimum gain is called the switching range. handbook, full pagewidth acoustic coupling telephone line HYBRID DUPLEX CONTROL TEA106X TEA1093 sidetone MGD218 Fig.3 Hands-free telephone set principles. 1996 Feb 09 6 Philips Semiconductors Product specification Hands-free IC TEA1093 When RVA is connected between pin VA and GND, the voltage on VBB is increased, when connected between pin VA and VBB, it is decreased. This is shown in Fig.5. Two capacitors of 4.7 nF (CSREF and CSTAB) are required to ensure stability of the supply block. When VSUP is greater than VBB + 0.4 V, the current ISUP is supplied to VBB via TR1. When VSUP is less, the current is shunted to GND via TR2, which prevents distortion on the line. Supply: pins SUP, SREF, VBB, GND, VA and PD As can be seen from Fig.4, the line current is divided between the speech-transmission circuit (ITR + ICC) and the TEA1093 circuit (ISUP). It can be shown that: ISUP = Iline − ITR − ICC Where: ITR = VSUP − VSREF/RSREF To reduce current consumption during pulse dialling or register recall (flash), the TEA1093 is provided with a power-down (PD) input. When the voltage on PD is HIGH, the current consumption from SUP is 55 µA and from VBB 400 µA. Therefore a capacitor of 470 µF (CVBB) is sufficient to power the TEA1093 during pulse dialling. VSUP − VSREF = 315 mV RSREF = 100 Ω ICC ≈ 1 mA It follows that ISUP ≈ ILINE − 4 mA. The TEA1093 stabilizes its own supply voltage of 3.6 V at VBB. The voltage on VBB can be adjusted by means of an external resistor RVA. CSTAB handbook, full pagewidth 4.7 nF ISUP Iline VBB 10 TR1 9 SUP to dynamic limiter TR2 RSREF 315 mV 100 Ω ICC ITR 7 SREF line VCC LN V V SWITCH TEA1093 SLPE PD 17 VA 15 RVA CVBB 470 µF GND TEA106X VEE VOLTAGE STABILIZER POWER DOWN 8 CSREF 4.7 nF MGD219 Fig.4 Supply arrangement. 1996 Feb 09 7 Philips Semiconductors Product specification Hands-free IC TEA1093 Microphone channel: pin MIC, GAT, MOUT, MICGND and MUTET MGD220 The TEA1093 has an asymmetrical microphone input MIC with an input resistance of 20 kΩ. The gain of the input stage varies according to the mode of the TEA1093. In the transmit mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The output capability at pin MOUT is 20 µA (RMS). 10 handbook, halfpage VBB (V) 8 6 RVA(VA-GND) In the transmit mode, the overall gain of the microphone amplifier (from pin MIC to MOUT) can be adjusted from 5 dB up to 25 dB to suit specific application requirements. The gain is proportional to the value of RGAT and equals 15 dB typical with RGAT = 30.1 kΩ. 4 3.6 V without RVA RVA(VA-VBB) 2 1 102 10 RVA (kΩ) A capacitor must be connected in parallel with RGAT to ensure stability of the microphone amplifier. Together with RGAT, it also provides a first-order low-pass filter. 103 By applying a HIGH level on pin MUTET, the microphone amplifier is muted and the TEA1093 is automatically forced into the receive mode. Fig.5 VBB as a function of RVA. handbook, full pagewidth 19 MUTET VBB CMIC 22 MIC GAT 21 V I I V MOUT 20 RMIC to envelope detector from voice switch to logic MICGND MGD221 Fig.6 Microphone channel. 1996 Feb 09 8 18 RGAT to TEA106X Philips Semiconductors Product specification Hands-free IC TEA1093 handbook, full pagewidth RGAR to to to/from envelope logic voice switch detector 5 GAR from voltage stabilizer CLSP1 RIN1 2 6 LSP1 CDLC 1 DLC/MUTER 4 LSP2 V I I V from TEA106X RIN2 3 DYNAMIC LIMITER VOLUME CONTROL −1 VOL 11 RVOL MGD222 Fig.7 Loudspeaker channel. Loudspeaker channel VOLUME CONTROL: PIN VOL LOUDSPEAKER AMPLIFIER: PINS RIN1, RIN2, GAR, LSP1 AND LSP2 The loudspeaker amplifier gain can be adjusted with the potentiometer RVOL. A linear potentiometer can be used to obtain logarithmic control of the gain at the loudspeaker amplifier. Each 950 Ω increase of RVOL results in a gain loss of 3 dB. The maximum gain reduction with the volume control is internally limited to the switching range. The TEA1093 has symmetrical inputs for the loudspeaker amplifier with an input resistance of 40 kΩ between RIN1 and RIN2 (2 × 20 kΩ). The input stage can accommodate signals up to 390 mV (RMS) at room temperature for 2% of total harmonic distortion (THD). The gain of the input stage varies according to the mode of the TEA1093. In the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The rail-to-rail output stage is designed to power a loudspeaker which is connected as a single-ended load (between LSP1 and GND) or as a bridge-tied load (between LSP1 and LSP2). DYNAMIC LIMITER: PIN DLC/MUTER The dynamic limiter of the TEA1093 prevents clipping of the loudspeaker output stages and protects the operation of the circuit when the supply condition falls below a certain level. Hard clipping of the loudspeaker output stages is prevented by rapidly reducing the gain when the output stages start to saturate. The time in which gain reduction is effected (clipping attack time) is approximately a few milliseconds. The circuit stays in the reduced gain mode until the peaks of the loudspeaker signals no longer cause saturation. The gain of the loudspeaker amplifier then returns to its normal value within the clipping release time (typical 250 ms). Both attack and release times are proportional to the value of the capacitor CDLC. The total harmonic distortion of the loudspeaker output stages, in reduced gain mode, stays below 5% up to 10 dB (minimum) of input voltage overdrive [providing VRIN is below 390 mV (RMS)]. In the receive mode, the overall gain of the loudspeaker amplifier can be adjusted from 3 dB up to 39 dB to suit specific application requirements. The gain from RIN1 or RIN2 to LSP1 is proportional to the value of RGAR and equals 18 dB with RGAR = 66.5 kΩ. The second output LSP2 is in opposite phase with LSP1. Therefore, in the basic application, the gain between RIN1-RIN2 to LSP1-LSP2 equals 24 dB typical with RGAR = 66.5 kΩ. A capacitor connected in parallel with RGAR can be used to provide a first-order low-pass filter. 1996 Feb 09 9 Philips Semiconductors Product specification Hands-free IC TEA1093 When the supply conditions drop below the required level, the gain of the loudspeaker amplifier is reduced in order to prevent the TEA1093 from malfunctioning. Only the gain of the loudspeaker amplifier is affected since it is considered to be the major power consuming part of the TEA1093. For the transmit channel, the input signal at MIC is 40 dB, amplified to TSEN. For the receive channel, the differential signal between RIN1 and RIN2 is 0 dB amplified to RSEN. The signals from TSEN and RSEN are logarithmically compressed and buffered to TENV and RENV respectively. The sensitivity of the envelope detectors is set with RTSEN and RRSEN. The capacitors connected in series with the two resistors block any DC component and form a first-order high-pass filter. In the basic application, see Fig.16, it is assumed that VMIC = 1 mV (RMS) and VRIN = 100 mV (RMS) nominal and both RTSEN and RRSEN have a value of 10 kΩ. With the value of CTSEN and CRSEN at 100 nF, the cut-off frequency is at 160 Hz. When the TEA1093 experiences a loss of current, the supply voltage VBB decreases. In this event, the gain of the loudspeaker amplifiers is slowly reduced (approximately a few seconds). When the supply voltage continues to decrease and drops below an internal voltage threshold of 2.75 V, the gain of the loudspeaker amplifier is rapidly reduced (approximately 1 ms). When normal supply conditions are resumed, the gain of the loudspeaker amplifier is increased again. This system ensures that in the event of large continuous signals, all current is used to power the loudspeaker while the voltage on pin VBB remains at its nominal value. The buffer amplifiers leading the compressed signals to TENV and RENV have a maximum source current of 120 µA and a maximum sink current of 1 µA. Together with the capacitor CTENV and CRENV, the timing of the signal envelope monitors can be set. In the basic application, the value of both capacitors is 470 nF. Because of the logarithmic compression, each 6 dB signal increase means 18 mV increase of the voltage on the envelopes TENV or RENV at room temperature. Thus, timings can be expressed in dB/ms. At room temperature, the 120 µA sourced current corresponds to a maximum rise-slope of the signal envelope of 85 dB/ms. This is sufficient to track normal speech signals. The 1 µA current sunk by TENV or RENV corresponds to a maximum fall-slope of 0.7 dB/ms. This is sufficient for a smooth envelope and also eliminates the effect of echoes on switching behaviour. By forcing a level lower than 0.2 V on pin DLC/MUTER, the loudspeaker amplifier is muted and the TEA1093 is automatically forced into the transmit mode. Duplex controller SIGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI The signal envelopes are used to monitor the signal level strength in both channels. The noise envelopes are used to monitor background noise in both channels. The signal and noise envelopes provide inputs for the decision logic. The signal and noise envelope detectors are shown in Fig.8. handbook, full pagewidth DUPLEX CONTROLLER to logic to logic LOG LOG from microphone amplifier from loudspeaker amplifier TSEN TENV 28 (24) 27 (23) TNOI 26 (22) RTSEN CTSEN RSEN RENV 25 (21) 24 (20) RNOI 23 (19) RRSEN CTENV CTNOI CRSEN CRENV CRNOI MGD223 Fig.8 Signal and noise envelope detectors. 1996 Feb 09 10 Philips Semiconductors Product specification Hands-free IC TEA1093 4 mV (RMS) handbook, full pagewidth MBG354 1 mV (RMS) INPUT SIGNAL SIGNAL ENVELOPE 36 mV A A B B A: 85 dB/ms B: 0.7 dB/ms NOISE ENVELOPE C B 36 mV B: 0.7 dB/ms C: 0.07 dB/ms B C time Fig.9 Signal and noise envelope waveforms. g 16 IDT (12) DUPLEX CONTROLLER Vref 27 (23) TENV LOGIC(1) RIDT TNOI 26 (22) 14 SWT (11) 13 mV ATTENUATOR CSWT 24 (20) RENV RNOI 23 (19) X X 1 1 − 10 µA X 1 0 X + 10 µA 1 X 0 X + 10 µA X X 1 0 0 0 0 0 X 0 13 mV 19 (15) MUTET Vdt from dynamic limiter MGD224 (1) When MUTET = HIGH, +10 µA is forced. When DLC/MUTER < 0.2 V, −10 µA is forced. Fig.10 Decision logic. 1996 Feb 09 11 Philips Semiconductors Product specification Hands-free IC TEA1093 To determine the noise level, the signal on TENV and RENV are buffered to TNOI and RNOI. These buffers have a maximum source current of 1 µA and a maximum sink current of 120 µA. Together with the capacitors CTNOI and CRNOI, the timing can be set. In the basic application of Fig.16, the value of both capacitors is 4.7 µF. At room temperature, the 1 µA sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 dB/ms. This is small enough to track background noise and not to be influenced by speech bursts. The 120 µA current that is sunk corresponds to a maximum fall-slope of approximately 8.5 dB/ms. However, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 dB/ms. The behaviour of the signal envelope and noise envelope monitors is illustrated in Fig.9. As can be seen from Fig.10, the output of the decision logic is a current source. The logic table gives the relationship between the inputs and the value of the current source. It can charge or discharge the capacitor CSWT with a current of 10 µA (switch-over). If the current is zero, the voltage on SWT becomes equal to the voltage on IDT via the high-ohmic resistor RIDT (idling). The resulting voltage difference between SWT and IDT determines the mode of the TEA1093 and can vary between −400 mV and +400 mV. Table 1 Modes of TEA1093 VSWT − VIDT (mV) MODE <−180 transmit mode 0 idle mode >+180 receive mode DECISION LOGIC: PINS IDT AND SWT The switch-over timing can be set with CSWT, the idle mode timing with CSWT and RIDT. In the basic application given in Fig.16, CSWT is 220 nF and RIDT is 2.2 MΩ. This enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mV swing on SWT). The switch-over time from idle mode to transmit mode or receive mode is approximately 4 ms (180 mV swing on SWT). The TEA1093 selects its mode of operation (transmit, receive or idle mode) by comparing the signal and the noise envelopes of both channels. This is executed by the decision logic. The resulting voltage on pin SWT is the input for the voice-switch. To facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 dB above the noise envelope. At room temperature, this is equal to a voltage difference VENV−VNOI = 13 mV. This so called speech/noise threshold is implemented in both channels. The switch over, from receive mode or transmit mode to idle mode, is equal to 4 × RIDT × CSWT and is approximately 2 seconds (idle mode time). The inputs MUTET and DLC/MUTER overrule the decision logic. When MUTET goes HIGH, the capacitor CSWT is charged with 10 µA thus resulting in the receive mode. When the voltage on pin DLC/MUTER goes lower than 0.2 V, the capacitor is discharged with 10 µA thus resulting in the transmit mode. The signal on MIC contains both speech and the signal coming from the loudspeaker (acoustic coupling). When receiving, the contribution from the loudspeaker overrules the speech. As a result, the signal envelope on TENV is formed mainly by the loudspeaker signal. To correct this, an attenuator is connected between TENV and the TENV/RENV comparator. Its attenuation equals that applied to the microphone amplifier. VOICE-SWITCH: PINS STAB AND SWR A diagram of the voice-switch is illustrated in Fig.11. With the voltage on SWT, the TEA1093 voice-switch regulates the gains of the transmit and the receive channel so that the sum of both is kept constant. When a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. This would cause the TEA1093 to go into the idle mode and the user of the set would hear the dial tone fade away. To prevent this, a dial tone detector is incorporated which, in standard applications, does not consider input signals between RIN1 and RIN2 as noise when they have a level greater than 127 mV (RMS). This level is proportional to RRSEN. 1996 Feb 09 12 Philips Semiconductors Product specification Hands-free IC TEA1093 In the transmit mode, the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. In the receive mode, the opposite applies. In the idle mode, both microphone and loudspeaker amplifier gains are halfway. The difference between maximum and minimum is the so called switching range. This range is determined by the ratio of RSWR and RSTAB and is adjustable between 0 and 52 dB. RSTAB should be 3.65 kΩ and sets an internally used reference current. In the basic application diagram given in Fig.16, RSWR is 365 kΩ which results in a switching range of 40 dB. The switch-over behaviour is illustrated in Fig.12. DUPLEX CONTROLLER to microphone amplifier from SWT Gvtx + Gvrx = C(1) VOICE SWITCH from volume control 13 R STAB STAB (10) In the receive mode, the gain of the loudspeaker amplifier can be reduced using the volume control. Since the voice-switch keeps the sum of the gains constant, the gain of the microphone amplifier is increased at the same time (see dashed curves in Fig.12). In the transmit mode, however, the volume control has no influence on the gain of the microphone amplifier or the gain of the loudspeaker amplifier. Consequently, the switching range is reduced when the volume is reduced. At maximum reduction of volume, the switching range becomes 0 dB. RSWR SWR 12 (9) to loudspeaker amplifier MGD225 (1) c - constant. Fig.11 Voice-switch. Tx mode Gvtx, Gvrx (10 dB/div) MBG351 idle mode handbook, halfpage Rx mode RVOL (Ω) Gvtx 5700 3800 1900 0 0 1900 3800 5700 Gvrx −400 −200 0 +200 +400 VSWT − VIDT (mV) Fig.12 Switch-over behaviour. 1996 Feb 09 13 Philips Semiconductors Product specification Hands-free IC TEA1093 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vn(max) maximum voltage on all pins; except pins SUP, SREF, VBB, RIN1 and RIN2 VGND − 0.4 V VBB + 0.4 V V VRINmax maximum voltage on pin RIN1 or RIN2 VGND − 1.2 V VBB + 0.4 V V VBBmax maximum voltage on pin VBB VGND − 0.4 V 12.0 V VSREFmax maximum voltage on pin SREF VGND − 0.4 V VSUP + 0.4 V V VSUPmax maximum voltage on pin SUP VGND − 0.4 V 12.0 V ISUPmax maximum current on pin SUP see also Figs 13 and 14 − 140 mA Ptot total power dissipation see also Figs 13 and 14; Tamb = 75 °C − 910 mW − 670 mW TEA1093 TEA1093T Tstg storage temperature −40 +125 °C Tamb operating ambient temperature −25 +75 °C HANDLING ESD in accordance with MIL STD883C; Method 3015 (HBM 1500 Ω, 100 pF); 3 pulses positive and 3 pulses negative on each pin referenced to ground. Class 2: 2000 to 3999 V. THERMAL CHARACTERISTICS SYMBOL Rth j-a 1996 Feb 09 PARAMETER VALUE UNIT TEA1093 55 K/W TEA1093T 75 K/W thermal resistance from junction to ambient in free air 14 Philips Semiconductors Product specification Hands-free IC TEA1093 MGD227 150 MGD226 150 ISUP (mA) handbook, halfpage ISUP (mA) handbook, halfpage 130 (1) 130 (1) (2) (2) 110 110 (3) (3) 90 (4) 90 (4) (5) 70 70 (6) 50 4 50 4 (1) (2) (3) (4) 6 8 10 12 VSUP (V) (1) (2) (3) (4) (5) (6) Tamb = 45 °C; Ptot = 1.45 W. Tamb = 55 °C; Ptot = 1.27 W. Tamb = 65 °C; Ptot = 1.09 W. Tamb = 75 °C; Ptot = 0.91 W. Fig.13 TEA1093 safe operating area. 1996 Feb 09 6 8 10 12 VSUP (V) Tamb = 25 °C; Ptot = 1.33 W. Tamb = 35 °C; Ptot = 1.20 W. Tamb = 45 °C; Ptot = 1.07 W. Tamb = 55 °C; Ptot = 0.93 W. Tamb = 65 °C; Ptot = 0.80 W. Tamb = 75 °C; Ptot = 0.67 W. Fig.14 TEA1093T safe operating area. 15 Philips Semiconductors Product specification Hands-free IC TEA1093 CHARACTERISTICS VSREF = 4.2 V; VGND = 0 V; ISUP = 15 mA; VSUP = 0 V (RMS); f = 1 kHz; Tamb = 25 °C; PD = LOW; MUTET = LOW; RL = 50 Ω; RVOL = 0 Ω; measured in test circuit of Fig.15; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (VA, SREF, SUP, VBB, GND and PD) VBB stabilized supply voltage ∆VBB(ISUP) VBB variation with ISUP ∆VBB(T) ∆VBB(RVA) 3.35 3.6 3.85 V ISUP = 15 to 140 mA − 20 − mV VBB variation with temperature referenced to 25 °C Tamb = −25 to + 75 °C − ±20 − mV VBB adjustment with RVA between VA and VBB; RVA = 180 kΩ − 3.2 − V between VA and GND; − VSREF = 4.9 V; RVA = 56 kΩ 4.5 − V ISUP(min) minimum operating current − 5.5 7.0 mA VSUP − VBB minimum DC voltage drop between pin SUP and VBB 0.4 − − V 275 315 355 mV − 0.5 − % 0.3 V VSUP − VSREF internal reference voltage THD total harmonic distortion of AC signal on SUP VSUP = 1 V (RMS) Power-Down input PD VGND − 0.4 V − VIL LOW level input voltage VIH HIGH level input voltage 1.5 − VBB + 0.4 V V IPD input current in power-down condition PD = HIGH − 2.5 5.0 µA ISUP(PD) current consumption from pin SUP in power-down condition PD = HIGH; VSUP = 4.5 V − 55 75 µA IBB(PD) current consumption from pin VBB in power-down condition PD = HIGH; VBB = 3.6 V − 400 550 µA 1996 Feb 09 16 Philips Semiconductors Product specification Hands-free IC SYMBOL TEA1093 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Microphone channel (MIC, GAT, MOUT, MUTET and MICGND) MICROPHONE AMPLIFIER Zi input impedance between pin MIC and MICGND Gvtx voltage gain from pin MIC to MOUT in transmit mode ∆Gvtxr voltage gain adjustment with RGAT ∆GvtxT voltage gain variation with temperature referenced to 25 °C ∆Gvtxf Vnotx 17 20 23 kΩ 12.5 15 17.5 dB −10 − +10 dB VMIC = 1 mV (RMS); Tamb = −25 to +75 °C − ±0.3 − dB voltage gain variation with frequency referenced to 1 kHz VMIC = 1 mV (RMS); f = 300 to 3400 Hz − ±0.3 − dB noise output voltage at pin MOUT pin MIC connected to MICGND through 200 Ω in series with 10 µF; psophometrically weighted (P53 curve) − −100 − VMIC = 1 mV (RMS) dBmp TRANSMIT MUTE INPUT MUTET VIL LOW level input voltage VGND − 0.4 V − VIH HIGH level input voltage 1.5 IMUTET input current MUTET = HIGH − 2.5 5 µA ∆Gvtxm voltage gain reduction with MUTET active MUTET = HIGH − 80 − dB − 0.3 V VBB + 0.4 V V Loudspeaker channel (RIN1, RIN2, GAR, LSP1, LSP2 and DLC/MUTER) LOUDSPEAKER AMPLIFIER Zi Gvrx input impedance between pins RIN1 or RIN2 and GND 17 20 23 kΩ between pins RIN1 and RIN2 34 40 46 kΩ the difference between RIN1 and RIN2 to the difference between LSP1 and LSP2, bridge-tied load 21.5 24 26.5 dB the difference between RIN1 and RIN2 to LSP1 or LSP2, single-ended load 15.5 18 20.5 dB −15 − +15 dB − ±0.3 − dB voltage gain in receive mode ∆Gvrxr voltage gain adjustment with RGAR ∆GvrxT voltage gain variation with temperature referenced to 25 °C 1996 Feb 09 VRIN = 20 mV (RMS) VRIN = 20 mV (RMS); Tamb = -25 to +75 °C 17 Philips Semiconductors Product specification Hands-free IC SYMBOL TEA1093 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ∆Gvrxf voltage gain variation with frequency referenced to 1 kHz VRIN = 20 mV (RMS); f = 300 to 3400 Hz − ±0.3 − dB VRIN(rms) maximum input voltage between RIN1 and RIN2 (RMS value) for 2% THD in input − stage; RGAR = 11.8 kΩ 390 − mV Vnorx(rms) noise output voltage at pin LSP1 or LSP2 (RMS value) inputs RIN1 and RIN2 short-circuited through 200 Ω in series with 10 µF; psophometrically weighted (P53 curve) − 80 − µV CMRR common mode rejection ratio − 50 − dB ∆Gvrxv voltage gain variation related to ∆RVOL = 950 Ω − 3 − dB VRIN = 150 mV (RMS); 1.2 ISUP = 11 mA; note 1 1.45 − V VRIN = 150 mV (RMS); 2.5 ISUP = 16.5 mA; note 2 2.9 − V VRIN = 150 mV (RMS); 2.5 ISUP = 27 mA; note 2 2.9 − V VRIN = 150 mV (RMS); 3.5 ISUP = 35 mA; note 3 4.0 − V VRIN = 150 mV (RMS); − ISUP = 62 mA; RL = 33 Ω; note 4 5.15 − V 150 300 − mA when total attenuation does not exceed the switching range OUTPUT CAPABILITY VOSE(p-p) VOBTL(p-p) IOM(max) single-ended load (peak-to-peak value) bridge-tied load (peak-to-peak value) maximum output current at LSP1 or LSP2 (peak value) DYNAMIC LIMITER tatt attack time when VRIN jumps from 20 mV to 20 mV + 10 dB RGAR = 374 kΩ; ISUP = 20 mA − − 5 ms trel release time when VRIN jumps from 20 mV + 10 dB to 20 mV RGAR = 374 kΩ; ISUP = 20 mA − 250 − ms THD total harmonic distortion at VRIN = 20 mV + 10 dB RGAR = 374 kΩ; ISUP = 20 mA; t > tatt − 0.9 5 % VBB(th) VBB limiter threshold − 2.75 − V tatt attack time when VBB jumps below VBB(th) − 1 − ms 1996 Feb 09 18 Philips Semiconductors Product specification Hands-free IC SYMBOL TEA1093 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT MUTE RECEIVE VDLC(th) threshold voltage required on pin DLC/MUTER to obtain mute receive condition VGND − 0.4 V − 0.2 V IDLC(th) threshold current sourced by pin VDLC = 0.2 V DLC/MUTER in mute receive condition − 80 − µA ∆Gvrxm voltage gain reduction in mute receive condition VDLC < 0.2 V − 80 − dB Envelope and noise detectors (TSEN, TENV, RSEN and RENV) PREAMPLIFIERS Gv(TSEN) voltage gain from MIC to TSEN 38 40 42 dB Gv(RSEN) voltage gain between RIN1 and RIN2 to RSEN. −2 0 +2 dB LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT ∆Vdet(TSEN) sensitivity detection on pin TSEN; voltage change on pin TENV when doubling the current from TSEN ITSEN = 0.8 to 160 µA − 18 − mV ∆Vdet(RSEN) sensitivity detection on pin RSEN; voltage change on pin RENV when doubling the current from RSEN IRSEN = 0.8 to 160 µA − 18 − mV SIGNAL ENVELOPE DETECTORS Isource(ENV) maximum current sourced from pin TENV or RENV − 120 − µA Isink(ENV) maximum current sunk by pin TENV or RENV 0.75 1 1.25 µA ∆VENV voltage difference between pin RENV and TENV − ±3 − mV when 10 µA is sourced from both RSEN and TSEN; envelope detectors tracking; note 5 NOISE ENVELOPE DETECTORS Isource(NOI) maximum current sourced from pin TNOI or RNOI 0.75 1 1.25 µA Isink(NOI) maximum current sunk by pin TNOI or RNOI − 120 − µA ∆VNOI voltage difference between pin RNOI and TNOI ±3 − mV 1996 Feb 09 when 5 µA is sourced − from both RSEN and TSEN; noise detectors tracking; note 5 19 Philips Semiconductors Product specification Hands-free IC SYMBOL TEA1093 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DIAL TONE DETECTOR VRINDT(rms) threshold level at pin RIN1 and RIN2 (RMS value) − 127 − mV Decision logic (IDT and SWT) SIGNAL RECOGNITION ∆VSrx(th) threshold voltage between pin RENV and RNOI to switch-over from receive to idle mode VRIN < VRINDT; note 6 − 13 − mV ∆VStx(th) threshold voltage between pin TENV and TNOI to switch-over from transmit to idle mode note 6 − 13 − mV SWITCH-OVER Isource(SWT) current sourced from pin SWT when switching to receive mode 7.5 10 12.5 µA Isink(SWT) current sunk by pin SWT when switching to transmit mode 7.5 10 12.5 µA Iidle(SWT) current sourced from pin SWT in idle mode − 0 − µA Voice switch (STAB and SWR) SWRA switching range − 40 − dB ∆SWRA switching range adjustment with RSWR referenced to 365 kΩ −40 − 12 dB |∆Gv| voltage gain variation from transmit mode to idle mode on both channels − 20 − dB Gtr gain tracking (Gvtx + Gvrx) during switching, referenced to idle mode − ±0.5 − dB Notes 1. Corresponds to 5 mW output power. 2. Corresponds to 20 mW output power. 3. Corresponds to 40 mW output power. 4. Corresponds to 100 mW output power. 5. Corresponds to ±1 dB tracking. 6. Corresponds to 4.3 dB noise/speech recognition level. 1996 Feb 09 20 220 nF RSREF 100 Ω RIDT 2.2 MΩ 7 9 SUP SREF VSREF 20 4.2 V 19 PD 3.65 kΩ 16 17 MUTET RSTAB IDT RSWR 365 kΩ 14 13 12 SWT STAB SWR VA 15 RVA MOUT RGAT 30.1 kΩ 21 CRIN1 2 GAT RIN1 TEA1093 21 3 MIC LSP2 RIN2 220 nF GAR 8 VRIN1 22 4 470 µF CMIC 220 nF VMIC 5 RGAR 66.5 kΩ MICGND GND LSP1 RSEN RENV 25 24 TSEN 28 RNOI 23 TENV 27 RRSEN RTSEN 10 kΩ 10 kΩ TNOI DLC/MUTER 26 1 6 VOL 11 RVOL CRSEN CRENV CRNOI CTSEN CTENV CTNOI CDLC 100 nF 470 nF 4.7 µF 100 nF 470 nF 4.7 µF 470 nF CLSP1 47 µF RL 50 Ω MGD228 Product specification Fig.15 Test circuit. TEA1093 handbook, full pagewidth 18 CVBB VBB 10 220 nF CRIN2 Philips Semiconductors Hands-free IC 1996 Feb 09 CSWT ISUP CSREF 4.7 nF LN SREF 20 MIC − C8 MIC + QR + C1 17 PD CGAT 13 STAB 12 SWR VBB RGAT 30.1 kΩ 21 CRIN1 22 CRIN2 TEA106X 14 SWT MOUT GAT MIC 2 RIN1 TEA1093 100 nF 100 µF 16 IDT 100 nF 3 18 8 LSP2 GAR SLPE R9 20 Ω CVBB 10 470 µF 22 4 CMIC RMIC 100 nF 5 RGAR 66.5 kΩ MICGND GND LSP1 VEE 15 RIN2 RSEN 25 RRSEN 10 kΩ CRSEN 100 nF RNOI RENV 24 23 TSEN 28 RTSEN CRENV CRNOI 10 kΩ CTSEN 470 nF 4.7 µF 100 nF TENV 27 TNOI DLC/MUTER 1 26 CTENV CTNOI CDLC 470 nF 4.7 µF 470 nF 6 VOL 11 RVOL CLSP1 47 µF LSP 50 Ω MGD229 Product specification Fig.16 Basic application diagram. TEA1093 handbook, full pagewidth line 100 nF 19 MUTET 9 SUP RSWR 365 kΩ VA C7 100 nF RSTAB 3.65 kΩ RIDT 2.2 MΩ 7 VCC CSWT 220 nF from microcontroller RSREF 100 Ω R1 620 Ω Philips Semiconductors 4.7 nF Hands-free IC APPLICATION INFORMATION 1996 Feb 09 CSTAB C1 4.7 nF RSREF R1 620 Ω 390 Ω 100 Ω VCC LN 100 µF MIC− from microcontroller 100 µF C7a 100 nF 7 9 SREF SUP CSREF 19 17 MUTET PD 4.7 nF VBB S1 20 TEA106X 470 µF MOUT C8 DP DTMF MIC 22 100 nF DTMF QR+ CRIN1 2 23 100 nF CRIN2 3 10 µF 18 8 SLPE RMIC RIN1 TEA1093 RIN2 100 nF ring VEE CMIC 100 nF MIC+ MICROCONTROLLER CVBB 10 C7b 100 nF tip Philips Semiconductors Hands-free IC 1996 Feb 09 CSTAB MICGND GND LSP1 6 S2 CLSP1 R9 20 Ω LSP 50 Ω MGD230 Product specification Fig.17 Application proposal. TEA1093 handbook, full pagewidth interrupter Philips Semiconductors Product specification Hands-free IC TEA1093 PACKAGE OUTLINES seating plane handbook, full pagewidthdual in-line package; 28 leads (600 mil) DIP28: plastic SOT117-1 ME D A2 L A A1 c e Z w M b1 (e 1) b MH 15 28 pin 1 index E 1 14 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 5.1 0.51 4.0 1.7 1.3 0.53 0.38 0.32 0.23 36.0 35.0 14.1 13.7 2.54 15.24 3.9 3.4 15.80 15.24 17.15 15.90 0.25 1.7 inches 0.20 0.020 0.16 0.066 0.051 0.020 0.014 0.013 0.009 1.41 1.34 0.56 0.54 0.10 0.60 0.15 0.13 0.62 0.60 0.68 0.63 0.01 0.067 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT117-1 051G05 MO-015AH 1996 Feb 09 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-01-14 24 Philips Semiconductors Product specification Hands-free IC TEA1093 SO28: plastic small outline package; 28 leads; body width 7.5 mm SOT136-1 D E A X c y HE v M A Z 15 28 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 14 e bp 0 detail X w M 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 18.1 17.7 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.71 0.69 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 inches 0.10 Z (1) θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT136-1 075E06 MS-013AE 1996 Feb 09 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 25 o 8 0o Philips Semiconductors Product specification Hands-free IC TEA1093 SOLDERING BY SOLDER PASTE REFLOW Plastic dual in-line packages Reflow soldering requires the solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the substrate by screen printing, stencilling or pressure-syringe dispensing before device placement. BY DIP OR WAVE The maximum permissible temperature of the solder is 260 °C; this temperature must not be in contact with the joint for more than 5 s. The total contact time of successive solder waves must not exceed 5 s. Several techniques exist for reflowing; for example, thermal conduction by heated belt, infrared, and vapour-phase reflow. Dwell times vary between 50 and 300 s according to method. Typical reflow temperatures range from 215 to 250 °C. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified storage maximum. If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 min. at 45 °C. REPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING IRON OR PULSE-HEATED SOLDER TOOL) REPAIRING SOLDERED JOINTS Fix the component by first soldering two, diagonally opposite, end pins. Apply the heating tool to the flat part of the pin only. Contact time must be limited to 10 s at up to 300 °C. When using proper tools, all other pins can be soldered in one operation within 2 to 5 s at between 270 and 320 °C. (Pulse-heated soldering is not recommended for SO packages.) Apply the soldering iron below the seating plane (or not more than 2 mm above it). If its temperature is below 300 °C, it must not be in contact for more than 10 s; if between 300 and 400 °C, for not more than 5 s. Plastic small outline packages BY WAVE For pulse-heated solder tool (resistance) soldering of VSO packages, solder is applied to the substrate by dipping or by an extra thick tin/lead plating before package placement. During placement and before soldering, the component must be fixed with a droplet of adhesive. After curing the adhesive, the component can be soldered. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder bath is 10 s, if allowed to cool to less than 150 °C within 6 s. Typical dwell time is 4 s at 250 °C. A modified wave soldering technique is recommended using two solder waves (dual-wave), in which a turbulent wave with high upward pressure is followed by a smooth laminar wave. Using a mildly-activated flux eliminates the need for removal of corrosive residues in most applications. 1996 Feb 09 26 Philips Semiconductors Product specification Hands-free IC TEA1093 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 09 27 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. (31)40-2788399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (45)32 88 26 36, Fax. (45)31 57 19 49 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358)0-615 800, Fax. (358)0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040)23 53 60, Fax. 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(0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-2724825 SCDS47 © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 417021/1100/03/pp28 Document order number: Date of release: 1996 Feb 09 9397 750 00634