VISHAY SI5499DC-T1-E3

New Product
Si5499DC
Vishay Siliconix
P-Channel 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)e
0.036 at VGS = - 4.5 V
-6
0.045 at VGS = - 2.5 V
-6
0.056 at VGS = - 1.8 V
-6
0.077 at VGS = - 1.5 V
-6
VDS (V)
-8
Qg (Typ.)
• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
RoHS
14 nC
COMPLIANT
APPLICATIONS
• Load Switch for Portable Devices
- Guaranteed Operation at VGS = 1.5 V Critical for
Optimized Design and Longer Battery Life
1206-8 ChipFET®
S
1
D
D
D
D
D
G
Marking Code
D
G
BP
XXX
Lot Traceability
and Date Code
S
Part #
Code
D
Bottom View
Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±5
TC = 70 °C
TA = 25 °C
ID
IDM
TC = 25 °C
Continuous Source-Drain Diode Currenta, b
TA = 25 °C
IS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipationa, b
TA = 25 °C
Soldering Recommendations (Peak Temperature)
c, d
- 6a, b, e
A
- 25
- 5.2
- 2.1a, b
6.2
PD
4
2.5a, b
W
1.6a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
- 6e
- 5.6a, b
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
V
- 6e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
Unit
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
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1
New Product
Si5499DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
a, b
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t≤5s
RthJA
48
50
Steady State
RthJF
17
20
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. Maximum under Steady State conditions is 95 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
-8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
a
Forward Transconductance
rDS(on)
gfs
ID = - 250 µA
VDS = VGS, ID = - 250 µA
V
6
mV/°C
2.3
- 0.35
VDS = VGS, ID = - 5 mA
- 0.8
- 0.55
VDS = 0 V, VGS = ± 5 V
± 100
VDS = - 8 V, VGS = 0 V
-1
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
- 25
V
nA
µA
A
VGS = - 4.5 V, ID = - 5.1 A
0.030
0.036
VGS = - 2.5 V, ID = - 4.6 A
0.037
0.045
VGS = - 1.8 V, ID = - 4.3 A
0.046
0.056
VGS = - 1.5 V, ID = - 1.3 A
0.057
0.077
VDS = - 4 V, ID = - 5.1 A
18
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
1290
VDS = - 4 V, VGS = 0 V, f = 1 MHz
270
VDS = - 4 V, VGS = - 8 V, ID = - 6 A
VDS = - 4 V, VGS = - 4.5 V, ID = - 6 A
23
35
14
21
1.7
VDD = - 4 V, RL = 0.7 Ω
ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
8
10
15
70
110
60
90
tf
30
45
td(on)
8
15
td(off)
tr
td(off)
tf
nC
2.7
f = 1 MHz
td(on)
tr
pF
420
VDD = - 4 V, RL = 0.7 Ω
ID ≅ - 5.6 A, VGEN = - 8 V, Rg = 1 Ω
70
110
55
85
55
85
ns
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
New Product
Si5499DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
IS
TC = 25 °C
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
-6
- 25
IS = - 2.1 A, VGS = 0 V
IF = - 5.6 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.7
- 1.2
V
45
70
ns
18
27
nC
18
17
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
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New Product
Si5499DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
10
VGS = 5 thru 2.5 V
2V
8
I D - Drain Current (A)
I D - Drain Current (A)
20
15
1.5 V
10
6
4
TC = 125 °C
2
5
25 °C
1V
0
0.0
0.5
1.0
1.5
- 55 °C
0
0.0
2.0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
2000
VGS = 1.5 V
1600
0.08
C - Capacitance (pF)
rDS(on) - On-Resistance (mΩ)
0.09
VGS = 1.8 V
0.07
0.06
0.05
VGS = 2.5 V
Ciss
1200
800
Coss
0.04
400
VGS = 4.5 V
0.03
Crss
0.02
0
0
5
10
15
20
25
0
1
ID - Drain Current (A)
2
4
5
6
7
8
125
150
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.4
8
7
ID = 6 A
1.3
6
5
rDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
3
VDS = 4 V
4
VDS = 5.6 V
3
2
VGS = 4.5 V
ID = 5.1 A
1.2
1.1
1.0
0.9
0.8
1
0
0
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4
5
10
15
20
25
0.7
- 50
- 25
0
25
50
75
100
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
New Product
Si5499DC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
rDS(on) - Drain-to-Source On-Resistance (mΩ)
I S - Source Current (A)
40
TJ = 150 °C
10
TJ = 25 °C
1
0.0
ID = 5.1 A
0.08
0.06
TA = 125 °C
TA = 25 °C
0.04
0.02
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.7
40
0.6
Power (W)
VGS(th) (V)
ID = 250 µA
0.5
0.4
30
20
0.3
0.2
- 50
10
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by rDS(on)*
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
0.01
0.01
TA = 25 °C
Single Pulse
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
www.vishay.com
5
New Product
Si5499DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
14
I D - Drain Current (A)
12
10
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 73321
S-80193-Rev. B, 04-Feb-08
New Product
Si5499DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 84 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73321.
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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