Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free) Si4963BDY-T1—E3 (Lead Free with Tape and Reel) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −6.5 −4.9 −5.2 −3.9 IDM −40 −1.7 −0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 58 62.5 91 110 34 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72753 S-40235—Rev. A, 16-Feb-04 www.vishay.com 1 Si4963BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.4 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "12 V Diode Forward Voltagea −1 VDS = −20 V, VGS = 0 V, TJ = 55_C −5 VDS v −5 V, VGS = −4.5 V rDS(on) DS( ) Forward Transconductancea VDS = −20 V, VGS = 0 V mA −20 A VGS = −4.5 V, ID = −6.5 A 0.025 0.032 VGS = −2.5 V, ID = −2 A 0.040 0.050 gfs VDS = −10 V, ID = −6.5 A 18 VSD IS = −1.7 A, VGS = 0 V −0.75 −1.2 14 21 VDS = −10 V, VGS = −4.5 V, ID = −6.5 A 2.6 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time nC 4.6 f = 1 MHz 8.3 W td(on) 30 45 tr 40 60 80 120 55 85 40 80 VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 TC = −55_C VGS = 5 thru 3.5 V 3V 25_C 32 I D − Drain Current (A) I D − Drain Current (A) 32 24 2.5 V 16 2V 8 125_C 24 16 8 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72753 S-40235—Rev. A, 16-Feb-04 Si4963BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2000 0.08 1600 0.06 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.10 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 1200 800 Coss 400 0.02 Crss 0.00 0 0 8 16 24 32 40 0 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 6.5 A VGS = 4.5 V ID = 6.5 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 1.2 1.0 0.8 0 0 2 4 6 8 10 12 14 0.6 −50 16 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 40 I S − Source Current (A) 8 0.08 ID = 2 A 0.06 ID = 6.5 A 0.04 0.02 0.00 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72753 S-40235—Rev. A, 16-Feb-04 1.5 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4963BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 Single Pulse Power 30 25 0.3 20 ID = 250 mA 0.2 Power (W) VGS(th) Variance (V) 0.4 0.1 15 10 0.0 5 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 BVDSS Limited 0.01 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 91_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72753 S-40235—Rev. A, 16-Feb-04 Si4963BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72753 S-40235—Rev. A, 16-Feb-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5