MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS Features • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) Pb−Free Packages are Available SMB CASE 403A Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds AYWW U1x G G • Polarity: Polarity Band Indicates Cathode Lead A Y WW U1 = = = = Assembly Location Year Work Week Device Code x = A, B, C, D, G, or J G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 8 1 Publication Order Number: MURS120T3/D MURS120T3 Series MAXIMUM RATINGS MURS Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 400 600 V Average Rectified Forward Current IF(AV) 1.0 @ TL = 155°C 2.0 @ TL = 145°C 1.0 @ TL = 150°C 2.0 @ TL = 125°C A Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 35 A Rating Operating Junction Temperature *65 to +175 TJ °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS MURS Rating Symbol Thermal Resistance, Junction−to−Lead (TL = 25°C) 105T3 115T3 110T3 120T3 140T3 160T3 °C/W 13 RqJL Unit ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) tfr V 0.875 0.71 1.25 1.05 2.0 50 5.0 150 35 25 75 50 25 50 mA ns ns 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package MURS105T3 MURS105T3G SMB U1A SMB (Pb−Free) MURS110T3 MURS110T3G SMB U1B SMB (Pb−Free) MURS115T3 MURS115T3G SMB U1C SMB (Pb−Free) MURS120T3 MURS120T3G SMB U1D SMB U1G SMB (Pb−Free) MURS160T3 MURS160T3G 2500 Units / Tape & Reel SMB (Pb−Free) MURS140T3 MURS140T3G Shipping † SMB U1J SMB (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MURS120T3 Series MURS105T3, MURS110T3, MURS115T3, MURS120T3 10 IR, REVERSE CURRENT (m A) 7.0 5.0 3.0 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 175°C 100°C 2.0 TC = 25°C 1.0 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175°C TJ = 100°C 0.08 0.04 0.02 0.008 0.004 0.002 0.7 TJ = 25°C 0 20 40 60 80 100 120 140 160 180 200 0.5 VR, REVERSE VOLTAGE (VOLTS) 0.3 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. Figure 2. Typical Reverse Current* 0.2 50 0.1 45 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF C, CAPACITANCE (pF) 40 0.05 0.03 0.02 35 30 25 20 15 10 0.01 5.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 RATED VOLTAGE APPLIED RqJC = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 DC 3.0 2.0 SQUARE WAVE 1.0 0 80 90 100 110 120 130 140 150 160 170 180 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 5.0 TJ = 175°C 4.0 5.0 I 10 (CAPACITANCELOAD) PK + 20 I 3.0 AV 2.0 DC SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case Figure 5. Power Dissipation http://onsemi.com 3 2.5 MURS120T3 Series MURS140T3, MURS160T3 10 IR, REVERSE CURRENT (m A) 7.0 175°C 5.0 100°C 3.0 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TC = 25°C 2.0 1.0 0.7 400 200 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0.008 0.004 TJ = 175°C TJ = 100°C TJ = 25°C 0 200 100 300 400 500 600 700 0.5 VR, REVERSE VOLTAGE (VOLTS) 0.3 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. Figure 7. Typical Reverse Current* 0.2 25 0.1 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF C, CAPACITANCE (pF) 20 0.05 0.03 0.02 15 10 5.0 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Forward Voltage 10 RATED VOLTAGE APPLIED RqJC = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 DC 3.0 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 180 200 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 8. Typical Capacitance 5.0 4.0 5.0 10 (CAPACITANCE LOAD) I PK + 20 I SQUARE WAVE AV 3.0 DC TJ = 175°C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Current Derating, Case Figure 10. Power Dissipation http://onsemi.com 4 2.5 MURS120T3 Series PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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