TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 1.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115 = 80 Vdc (Min) − TIP111, TIP116 = 100 Vdc (Min) − TIP112, TIP117 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc Monolithic Construction with Built−in Base−Emitter Shunt Resistors Pb−Free Packages are Available* DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 50 WATTS MARKING DIAGRAM 4 1 TO−220AB CASE 221A STYLE 1 2 TIP11xG AYWW 3 TIP11x x A Y WW G = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 5 1 Publication Order Number: TIP110/D TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Unit VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 2.0 4.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 50 0.4 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C Unclamped Inductive Load Energy − Figure 13 E 25 mJ TJ, Tstg – 65 to + 150 _C Symbol Max Unit Collector Current − Continuous − Peak Operating and Storage Junction THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP110 TIP110G TIP111 TIP111G TIP112 TIP112G TIP115 TIP115G TIP116 TIP116G TIP117 TIP117G http://onsemi.com 2 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 − − − − − − 2.0 2.0 2.0 − − − 1.0 1.0 1.0 − 2.0 1000 500 − − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) VCEO(sus) Vdc TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP110, TIP115 TIP111, TIP116 TIP112 ,TIP117 ICEO Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc IEBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) − 2.5 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc hfe 25 − − − − 200 100 DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 Figure 1. Power Derating http://onsemi.com 3 140 160 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) 4.0 VCC −30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA RC MSD6100 USED BELOW IB ≈ 100 mA VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25°C 2.0 SCOPE t, TIME (s) μ TUT V2 approx +8.0 V RB D1 51 0 V1 approx −12 V ≈ 8.0 k ≈ 60 +4.0 V 25 ms tr 0.6 0.4 for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tf 1.0 0.8 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. 0.1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 0.3 0.02 0.01 0.01 2.0 4.0 Figure 3. Switching Times 0.2 0.1 0.1 0.03 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) D = 0.5 0.2 0.07 0.05 td @ VBE(off) = 0 PNP NPN P(pk) ZqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 4 20 50 100 200 500 1.0 k TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) ACTIVE−REGION SAFE−OPERATING AREA 10 4.0 1ms 5ms 2.0 1.0 TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 1.0 TIP115 TIP116 TIP117 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 4.0 2.0 TIP110 TIP111 TIP112 CURVES APPLY BELOW RATED VCEO 0.1 1.0 10 40 60 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 150°C dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECONDARY BREAKDOWN LIMITED 1.0 10 60 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. TIP115, 116, 117 Figure 6. TIP110, 111, 112 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. C, CAPACITANCE (pF) TC = 25°C 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 5 20 40 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) NPN TIP110, 111, 112 PNP TIP115, 116, 117 6.0 k 6.0 k TJ = 125°C 3.0 k 25°C 2.0 k −55 °C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 k 25°C 2.0 k −55 °C 1.0 k 800 600 400 300 0.04 0.06 4.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 4.0 k VCE = 3.0 V 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.4 3.0 TJ = 25°C IC = 0.5 A 1.0 A 4.0 A 2.0 A 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 3.4 TJ = 25°C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 Figure 9. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 6 2.0 4.0 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) PNP TIP115, 116, 117 +0.8 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN TIP110, 111, 112 *APPLIES FOR IC/IB ≤ hFE/3 0 −0.8 −1.6 25°C to 150°C * qVC for VCE(sat) −2.4 −55 °C to 25°C 25°C to 150°C −3.2 qVC for VBE −55 °C to 25°C −4.0 −4.8 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 +0.8 *APPLIES FOR IC/IB ≤ hFE/3 0 −0.8 −1.6 25°C to 150°C * qVC for VCE(sat) −55 °C to 25°C −2.4 25°C to 150°C −3.2 −4.0 −55 °C to 25°C qVC for VBE −4.8 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 105 REVERSE 104 103 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 VCE = 30 V 102 TJ = 150°C 101 100 100°C 25°C 10−1 −0.6 −0.4 −0.2 0 +0.2 103 VCE = 30 V 102 101 100 TJ = 150°C 100°C 25°C 10−1 −0.6 −0.4 +1.2 +1.4 +0.4 +0.6 +0.8 +1.0 −0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) TEST CIRCUIT TUT 2kW 50 W VBB1 = 10 V + − + − RBB2 100 W 50 W VBB2 = 0 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4 tw ≈ 3.5 ms (SEE NOTE A) 0V −5 V 100 mH RBB1 +0.2 Figure 12. Collector Cut-Off Region VOLTAGE AND CURRENT WAVEFORMS INPUT VOLTAGE MJE254 0 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE MONITOR INPUT FORWARD 104 100 ms VCC = 20 V IC MONITOR 0.71 A COLLECTOR CURRENT 0V VCER RS = 0.1 W COLLECTOR VOLTAGE 20 V VCE(sat) Note A: Input pulse width is increased until ICM = 0.71 A, NPN test shown; for PNP test reverse all polarity and use MJE224 driver. Figure 13. Inductive Load Switching http://onsemi.com 7 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. TIP110/D