DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: Low RDS(ON) – minimize conduction losses Low VSD – reducing the losses due to body diode conduction Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Description • This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications • • • Backlighting Power Management Functions DC-DC Converters Mechanical Data • • • • • • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate Drain Pin 1 S S 8 7 6 5 S G Gate D D D Source D Top View 2 3 4 Top View Pin Configuration 1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMG7702SFG-7 DMG7702SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. DMG7702SFG Document number: DS35248 Rev. 6 - 2 1 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG YYWW Marking Information G72 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) G72 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH ID Value 30 ±20 12 9.5 ID 16.0 12.7 A ID 9.5 7.5 A 13.0 10.3 90 3.5 17 43 ID IDM IS IAR EAR Units V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 0.89 0.55 145 74 2.2 1.3 58 31 11 -55 to +150 Units W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C DMG7702SFG Document number: DS35248 Rev. 6 - 2 2 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG 100 P(PK), PEAK TRANSIENT POIWER (W) -ID, DRAIN CURRENT (A) 100 PW = 10µs RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 T J(max) = 150°C T A = 25°C Single Pulse 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 100 90 Single Pulse RθJA = 61° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 80 70 60 50 40 30 20 10 0 0.1 1 10 100 1,000 0.0001 0.001 0.01 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 61° C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMG7702SFG Document number: DS35248 Rev. 6 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 3 of 8 www.diodes.com 10 100 1,000 July 2012 © Diodes Incorporated DMG7702SFG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 100 ±100 V μA nA VGS = 0V, ID = 250 μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.5 7.3 10 22 0.45 2.5 10 15 0.55 V Static Drain-Source On-Resistance 1.0 - VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11A VDS = 5V, ID = 10.0A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 0.26 - 1296 415 204 1.6 14.7 31.6 3.5 5.0 15.8 27.8 29.7 13.6 13.1 4.3 4310 2.7 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 13.5A VGS = 10V, VDS = 15V, RG = 3Ω, ID = 8.8A IF = 13.5A, di/dt = 100A/μs IF = 13.5A, di/dt = 100A/μs 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30 30 VGS = 4.5V 25 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V VGS = 3.5V 15 VGS = 3.0V 10 VGS = 2.5V 5 20 15 VGS = 150°C 10 DMG7702SFG Document number: DS35248 Rev. 6 - 2 VGS = 25°C VGS = -55°C VGS = 2.0V 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic VGS = 125°C VGS = 85°C 5 0 0 VDS = 5V 2.0 4 of 8 www.diodes.com 0 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 3.0 July 2012 © Diodes Incorporated 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMG7702SFG 0.04 VGS = 2.5V 0.03 0.02 VGS = 4.5V 0.01 VGS = 10V 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 VGS = 10V ID = 10A 1.0 0.8 T A = 125°C TA = 25°C 0 30 VGS = 10V ID = 10A 0.01 VGS = 10V ID = 5A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature 2.5 25 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 0.02 30 2.0 ID = 1mA ID = 250µA 0.5 20 TA = 25°C 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature Document number: DS35248 Rev. 6 - 2 5 0.03 3.0 DMG7702SFG TA = -55°C 0.005 Fig. 8 On-Resistance Variation with Temperature 1.0 TA = 85°C 0.010 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 1.5 TA = 150°C 0.015 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V ID = 5A 0.6 -50 VGS = 10V 30 1.6 1.2 0.020 5 of 8 www.diodes.com 0 0 0.4 0.6 0.8 1.0 1.2 0.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current July 2012 © Diodes Incorporated DMG7702SFG 10,000 10,000 IDSS, LEAKAGE CURRENT (µA) C, CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss 1,000 TA = 125°C 100 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Total Capacitance TA = 85°C 10 Crss 100 TA = 150°C T A = 25°C 20 1 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 8 VDS = 15V ID = 13.5A 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Source Voltage vs. Total Gate Charge DMG7702SFG Document number: DS35248 Rev. 6 - 2 6 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG Package Outline Dimensions POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 DMG7702SFG Document number: DS35248 Rev. 6 - 2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C 7 of 8 www.diodes.com July 2012 © Diodes Incorporated DMG7702SFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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