MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. http://onsemi.com Features • • • • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz Very Low Capacitance − Less Than 1.0 pF High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA Pb−Free Packages are Available SILICON SCHOTTKY BARRIER DIODES MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 7.0 V Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 PF Derate above 25°C TO−92 2−Lead CASE 182 STYLE 1 1 2 MBD101 MMBD101LT1 280 225 mW 2.2 1.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MBD 101 AYWW G G 2 CATHODE 3 1 1 ANODE SOT−23 (TO−236) CASE 318 STYLE 8 4M M G G 2 3 CATHODE 1 ANODE 1 (Pin 2 Not Connected) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 7.0 10 − V Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1, page 2) CD − 0.88 1.0 pF Forward Voltage (IF = 10 mA) VF − 0.5 0.6 V Reverse Leakage (VR = 3.0 V) IR − Reverse Breakdown Voltage (IR = 10 mA) A = Assembly Location Y = Year WW = Work Week 4M = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION 0.02 mA 0.25 Device MBD101 MBD101G MMBD101LT1 MMBD101LT1G Package Shipping † TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Publication Order Number: MBD101/D MBD101, MMBD101LT1 TYPICAL CHARACTERISTICS (TA = 25°C unless noted) 100 0.5 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( m A) 1.0 0.7 VR = 3.0 V 0.2 0.1 0.07 0.05 TA = 85°C 10 TA = −40°C 1.0 TA = 25°C 0.02 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 0.1 130 0.3 0.4 Figure 2. Forward Voltage Figure 1. Reverse Leakage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5) 9.0 0.9 NF, NOISE FIGURE (dB) C , CAPACITANCE (pF) D 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS) 0.8 0.7 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 3.0 1.0 4.0 0.1 0.2 0.5 1.0 2.0 VR, REVERSE VOLTAGE (VOLTS) PLO, LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure NOTES ON TESTING AND SPECIFICATIONS LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz 5.0 Note 1 — CD is measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 — LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). Figure 5. Noise Figure Test Circuit http://onsemi.com 2 10 MBD101, MMBD101LT1 PACKAGE DIMENSIONS TO−92 TWO LEAD TO−226AC CASE 182−06 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE D ÉÉ ÉÉ L P J K SECTION X−X X X D G H V 1 2 C DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.050 0.115 −−− 0.135 −−− STYLE 1: PIN 1. ANODE 2. CATHODE N N http://onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− MBD101, MMBD101LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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