ONSEMI MJF32C

MJF31C* (NPN),
MJF32C* (PNP)
*Preferred Devices
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
Designed for use in general purpose amplifier and switching
applications.
• Collector–Emitter Saturation Voltage –
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage –
VCEO(sus) = 100 Vdc (Min)
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3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
28 WATTS
• High Current Gain – Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
4
• UL Recognized, File #E69369, to 3500 VRMS Isolation
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MAXIMUM RATINGS
Symbol
MJF31C
MJF32C
Unit
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Rating
Collector–Emitter Voltage
Collector Current
Continuous
Peak
IC
Base Current
IB
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD
Total Power Dissipation
@ TA = 25C
Derate above 25C
PD
Unclamped Inductive
Load Energy (Note 1)
Operating and Storage Junction
Temperature Range
Adc
3.0
5.0
1.0
Adc
28
0.22
Watts
W/C
2.0
0.016
Watts
W/C
E
32
mJ
TJ, Tstg
–65 to
+150
C
MJF3xC
YWW
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TO–220 FULLPAK
CASE 221D–02
MJF3xC = Specific Device Code
x
= 1 or 2
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
 Semiconductor Components Industries, LLC, 2002
APRIL, 2002 – Rev. 2
1
Publication Order Number:
MJF31C/D
MJF31C* (NPN), MJF32C* (PNP)
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THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
62.5
C/W
Thermal Resistance, Junction to Case
RθJC
4.46
C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
100
–
–
0.3
–
200
IEBO
–
1.0
mAdc
hFE
25
10
–
50
–
VCE(sat)
VBE(on)
–
1.2
Vdc
–
1.8
Vdc
fT
hfe
3.0
–
MHz
20
–
–
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ICEO
Collector Cutoff Current
ICES
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Vdc
mAdc
µAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
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2
P D , POWER DISSIPATION (WATTS)
MJF31C* (NPN), MJF32C* (PNP)
TC TA
40 4.0
30 3.0
TC
20 2.0
TA
10 1.0
0
0
0
20
40
120
60
100
80
T, TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Vin 0
VEB(off)
APPROX
+11 V
VCC
t3
SCOPE
RB
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
Vin
t2
TURN-OFF PULSE
IC/IB = 10
TJ = 25°C
1.0
Vin
t1
2.0
RC
t, TIME (s)
µ
TURN-ON PULSE
APPROX
+11 V
-4.0 V
0.7
0.5
0.3
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
tr @ VCC = 30 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
td @ VEB(off) = 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
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3
3.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MJF31C* (NPN), MJF32C* (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
ZθJC(t) = r(t) RθJC
RθJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0
100µs
5.0ms
2.0
1.0
0.5
0.2
0.1
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
MJF31C,
CURVES APPLY
MJF32C
BELOW RATED VCEO
1.0ms
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active Region Safe Operating Area
t, TIME (s)
µ
1.0
0.7
0.5
0.3
0.2
ts′
tf @ VCC = 30 V
300
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.03
TJ = +25°C
200
CAPACITANCE (pF)
3.0
2.0
100
Ceb
70
50
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
30
0.1
3.0
Figure 6. Turn–Off Time
Ccb
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
20 30 40
MJF31C* (NPN), MJF32C* (PNP)
hFE, DC CURRENT GAIN
300
100
70
50
TJ = 150°C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
VCE = 2.0 V
25°C
-55°C
30
10
7.0
5.0
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 25°C
1.6
IC = 0.3 A
1.2
0.4
0
1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (A)
µ
101
100
10-1
10-2
10
20
50
100
IB, BASE CURRENT (mA)
200
500 1000
+2.5
+2.0
*APPLIES FOR IC/IB ≤ hFE/2
TJ = -65°C TO +150°C
+1.5
+1.0
+0.5
*θVC FOR VCE(sat)
0
-0.5
-1.0
-1.5
θVB FOR VBE
-2.0
-2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
103
102
5.0
IC, COLLECTOR CURRENT (AMPS)
VCE = 30 V
TJ = 150°C
100°C
REVERSE
FORWARD
25°C
10-3
-0.4 -0.3 -0.2 -0.1
ICES
0
+0.1 +0.2
+0.3 +0.4 +0.5
+0.6
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
V, VOLTAGE (VOLTS)
TJ = 25°C
0.6
2.0
Figure 9. Collector Saturation Region
1.4
0.8
3.0 A
0.8
Figure 8. DC Current Gain
1.2
1.0 A
2.0 3.0
107
VCE = 30 V
IC = 10 x ICES
106
IC ≈ ICES
105
104
IC = 2 x ICES
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
102
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
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5
MJF31C* (NPN), MJF32C* (PNP)
ORDERING INFORMATION
Device
Package
Shipping
MJF31C
TO–220 FULLPAK
50 Units/Rail
MJF32C
TO–220 FULLPAK
50 Units/Rail
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6
MJF31C* (NPN), MJF32C* (PNP)
PACKAGE DIMENSIONS
TO–220 FULLPAK
CASE 221D–02
ISSUE D
–T–
–B–
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
U
A
1 2 3
H
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
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7
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
MJF31C* (NPN), MJF32C* (PNP)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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8
MJF31C/D