MJF31C* (NPN), MJF32C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors for Isolated Package Applications Designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min) http://onsemi.com 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS • High Current Gain – Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc 4 • UL Recognized, File #E69369, to 3500 VRMS Isolation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol MJF31C MJF32C Unit VCEO 100 Vdc Collector–Base Voltage VCB 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Rating Collector–Emitter Voltage Collector Current Continuous Peak IC Base Current IB Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation @ TA = 25C Derate above 25C PD Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction Temperature Range Adc 3.0 5.0 1.0 Adc 28 0.22 Watts W/C 2.0 0.016 Watts W/C E 32 mJ TJ, Tstg –65 to +150 C MJF3xC YWW 1 2 3 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR TO–220 FULLPAK CASE 221D–02 MJF3xC = Specific Device Code x = 1 or 2 Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω.. Semiconductor Components Industries, LLC, 2002 APRIL, 2002 – Rev. 2 1 Publication Order Number: MJF31C/D MJF31C* (NPN), MJF32C* (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 C/W Thermal Resistance, Junction to Case RθJC 4.46 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 100 – – 0.3 – 200 IEBO – 1.0 mAdc hFE 25 10 – 50 – VCE(sat) VBE(on) – 1.2 Vdc – 1.8 Vdc fT hfe 3.0 – MHz 20 – – OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (IC = 3.0 Adc, VCE = 4.0 Vdc) ICEO Collector Cutoff Current ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Vdc mAdc µAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 P D , POWER DISSIPATION (WATTS) MJF31C* (NPN), MJF32C* (PNP) TC TA 40 4.0 30 3.0 TC 20 2.0 TA 10 1.0 0 0 0 20 40 120 60 100 80 T, TEMPERATURE (°C) 140 160 Figure 1. Power Derating Vin 0 VEB(off) APPROX +11 V VCC t3 SCOPE RB Cjd << Ceb t1 ≤ 7.0 ns 100 < t2 < 500 µs t3 < 15 ns Vin t2 TURN-OFF PULSE IC/IB = 10 TJ = 25°C 1.0 Vin t1 2.0 RC t, TIME (s) µ TURN-ON PULSE APPROX +11 V -4.0 V 0.7 0.5 0.3 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 DUTY CYCLE ≈ 2.0% APPROX -9.0 V tr @ VCC = 30 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure 2. Switching Time Equivalent Circuit td @ VEB(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn–On Time http://onsemi.com 3 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJF31C* (NPN), MJF32C* (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 ZθJC(t) = r(t) RθJC RθJC(t) = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZθJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 100µs 5.0ms 2.0 1.0 0.5 0.2 0.1 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. SECONDARY BREAKDOWN LIMITED @ TJ ≤ 150°C THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) BONDING WIRE LIMIT MJF31C, CURVES APPLY MJF32C BELOW RATED VCEO 1.0ms 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area t, TIME (s) µ 1.0 0.7 0.5 0.3 0.2 ts′ tf @ VCC = 30 V 300 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.03 TJ = +25°C 200 CAPACITANCE (pF) 3.0 2.0 100 Ceb 70 50 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 30 0.1 3.0 Figure 6. Turn–Off Time Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 20 30 40 MJF31C* (NPN), MJF32C* (PNP) hFE, DC CURRENT GAIN 300 100 70 50 TJ = 150°C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 VCE = 2.0 V 25°C -55°C 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25°C 1.6 IC = 0.3 A 1.2 0.4 0 1.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (A) µ 101 100 10-1 10-2 10 20 50 100 IB, BASE CURRENT (mA) 200 500 1000 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/2 TJ = -65°C TO +150°C +1.5 +1.0 +0.5 *θVC FOR VCE(sat) 0 -0.5 -1.0 -1.5 θVB FOR VBE -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients 103 102 5.0 IC, COLLECTOR CURRENT (AMPS) VCE = 30 V TJ = 150°C 100°C REVERSE FORWARD 25°C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) TJ = 25°C 0.6 2.0 Figure 9. Collector Saturation Region 1.4 0.8 3.0 A 0.8 Figure 8. DC Current Gain 1.2 1.0 A 2.0 3.0 107 VCE = 30 V IC = 10 x ICES 106 IC ≈ ICES 105 104 IC = 2 x ICES 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance http://onsemi.com 5 MJF31C* (NPN), MJF32C* (PNP) ORDERING INFORMATION Device Package Shipping MJF31C TO–220 FULLPAK 50 Units/Rail MJF32C TO–220 FULLPAK 50 Units/Rail http://onsemi.com 6 MJF31C* (NPN), MJF32C* (PNP) PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221D–02 ISSUE D –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 7 DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 MJF31C* (NPN), MJF32C* (PNP) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MJF31C/D