ETC XP133A1235SR

XP133A1235SR
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Power MOS FET
N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.035Ω (max)
Ultra High-Speed Switching
SOP - 8 Package
Two FET Devices built-in
■ General Description
■
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
■ Features
The XP133A1235SR is a N-Channel Power MOS FET with low on-state
Low on-state resistance : Rds (on) = 0.035Ω ( Vgs = 4.5V )
resistance and ultra high-speed switching characteristics.
Rds (on) = 0.048Ω ( Vgs = 2.5V )
Two FET devices are built into the one package.
Ultra high-speed switching
Because high-speed switching is possible, the IC can be efficiently
Operational Voltage : 2.5V
set thereby saving energy.
High density mounting : SOP - 8
The small SOP-8 package makes high density mounting possible.
■ Pin Configuration
■ Pin Assignment
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SOP - 8 Top View
■ Equivalent Circuit
PIN NAME
FUNCTION
1
S1
Source
2
G1
Gate
3
S2
Source
PIN NUMBER
4
G2
Gate
5 - 6
D2
Drain
7 - 8
D1
Drain
u
■ Absolute Maximum Ratings
Ta=25 OC
RATINGS
UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
20
+ 12
6
20
6
2
V
V
A
A
A
W
Channel Temperature
Tch
150
O
C
Storage Temperature
Tstg
- 55 to 150
O
C
PARAMETER
1
8
2
7
3
6
4
5
N - Channel MOS FET
( 2 FET devices built-in )
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
SYMBOL
Power Dissipation (note)
( note ) : When implemented on a glass epoxy PCB
413
XP133A1235SR
Power MOS FET
■ Electrical Characteristics
DC characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-off Current
Gate-Source Leakage Current
Idss
Igss
Vds = 20 , Vgs = 0V
Vgs = ± 12 , Vds = 0V
Gate-Source Cut-off Voltage
Vgs (off )
Id = 1mA , Vds = 10V
Drain-Source On-state Resistance
( note )
Rds ( on )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
MIN
TYP
0.5
Id = 3A , Vgs = 4.5V
MAX
Ta=25°C
UNITS
10
µA
±1
µA
1.2
V
0.035
0.048
Ω
Id = 3A , Vgs = 2.5V
0.026
0.035
| Yfs |
Id = 4A , Vds = 10V
14
Vf
If = 7A , Vgs = 0V
0.85
1.1
V
SYMBOL
CONDITIONS
TYP
MAX
Ta=25°C
UNITS
Ω
S
( note ) : Effective during pulse test.
Dynamic characteristics
PARAMETER
u
MIN
Input Capacitance
Ciss
760
pF
Output Capacitance
Coss
Crss
Vds = 10V , Vgs = 0V
430
pF
f = 1 MHz
200
pF
PARAMETER
SYMBOL
CONDITIONS
Turn-on Delay Time
td ( on )
Rise Time
Turn-off Delay Time
tr
td ( off )
Fall Time
tf
Feedback Capacitance
Switching characteristics
MIN
TYP
MAX
Ta=25°C
UNITS
10
ns
Vgs = 5V , Id = 3A
20
ns
Vdd = 10V
55
ns
15
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
414
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
°C / W
■ Electrical Characteristics
Drain Current vs. Drain/Source Voltage
Ta=25℃, Pulse Test
5V
4V
3.5V
3V
4.5V
16
Vds=10V, Pulse Test
20
16
Drain Current:Id (A)
20
Drain Current:Id (A)
Drain Current vs. Gate/Source Voltage
2.5V
12
2V
8
12
8
4
4
-55℃
Vgs=1.5V
0
0
0
0.5
1
1.5
2
2.5
3
0
Drain/Source Voltage:Vds (V)
3
4
5
Ta=25℃, Pulse Test
0.1
Drain/Source On State Resistance
:Rds(on) (Ω)
Drain/Source On State Resistance
:Rds(on) (Ω)
0.08
0.06
6A
Id=3A
2
Drain/Source On-State Resistance vs. Drain Current
Ta=25℃, Pulse Test
0.1
1
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
0.04
0.02
0
u
Vgs=2.5V
4.5V
0.01
0
2
4
6
8
0
4
8
Gate/Source Voltage:Vgs (V)
0.06
Id=6A
0.04
3A
3A, 6A
0.02
0
-50
20
4.5V
Vds=10V, Id=1mA
0.8
Gate/Source Cut-Off Voltage Variance
:Vgs(off) Variance (V)
0.08
Vgs=2.5V
16
Gate/Source Cut-Off Voltage Variance vs. Ambient Temperature
Pulse Test
0.1
12
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temperature
Drain/Source On State Resistance:Rds(on) (Ω)
25℃
Ta=125℃
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
0
50
100
Ambient Temp. :Topr (℃)
150
-50
0
50
100
150
Ambient Temp. :Topr (℃)
415
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