Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 (2SB937) and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C Tj Storage temperature Tstg 2SD1260A Collector cutoff 2SD1260 current 2SD1260A 150 ˚C –55 to +150 ˚C ICBO ICEO IEBO Emitter cutoff current Collector to emitter 2SD1260 voltage 2SD1260A Forward current transfer ratio Conditions VCE = 30V, IB = 0 2 VCE = 40V, IB = 0 2 VEB = 5V, IC = 0 2 60 IC = 30mA, IB = 0 hFE1 VCE = 4V, IC = 1A 1000 VCE = 4V, IC = 2A 1000 * VCE(sat) IC = 2A, IB = 8mA fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Internal Connection hFE2 Q 2.5 VCC = 50V P 1000 to 2500 2000 to 5000 4000 to 10000 mA mA mA 10000 2.8 IC = 2A, IB1 = 8mA, IB2 = –8mA, Unit V 80 Transition frequency Rank classification max 1 VCEO hFE2 typ 1 Collector to emitter saturation voltage R 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCE = 60V, IE = 0 VCE = 4V, IC = 2A Rank 0 to 0.4 VCE = 80V, IB = 0 VBE FE2 2 min Base to emitter voltage *h R0.5 R0.5 1.1 max. 5.08±0.5 Symbol 2SD1260 1.0±0.1 (TC=25˚C) Parameter current 6.0±0.3 2.54±0.3 1 Collector cutoff 3.4±0.3 W 1.3 ■ Electrical Characteristics 8.5±0.2 0.8±0.1 35 PC Junction temperature 2.0 Unit: mm 60 Emitter to base voltage Collector power TC=25°C 10.5min. V 80 14.7±0.5 emitter voltage 2SD1260A 1:Base 2:Collector 3:Emitter N Type Package 3 +0.4 2SD1260 2 3.0–0.2 Collector to 60 VCBO 1 Unit +0 2SD1260A 5.08±0.5 1.5–0.4 2SD1260 base voltage Ratings 0.5max. 2.54±0.3 (TC=25˚C) Symbol Collector to 0.8±0.1 10.0±0.3 Parameter 1.1max. 4.4±0.5 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V V 20 MHz 0.5 µs 4 µs 1 µs C B E Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1260, 2SD1260A PC — Ta IC — VCE 35 30 25 20 15 10 10 TC=25˚C VCE=4V 4 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (1) (PC=1.3W) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 40 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 3 2 0.4mA 0.2mA 1 8 25˚C TC=100˚C –25˚C 1.6 2.4 6 4 2 (2) 5 (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 1 2 4 5 Cob — VCB 25˚C 3 TC=–25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 104 1000 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 ICP t=10ms 3 IC 1ms 1 300ms 0.3 0.03 0.01 1 3 10 30 2SD1260A 2SD1260 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 300 1 0.1 10 Collector current IC (A) Area of safe operation (ASO) 30 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE VCE=4V 10 3.2 10000 IC/IB=250 30 1 0.8 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 105 100 Collector current IC (A) 2 6 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 3 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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