Power Transistors 2SB0942, 2SB0942A (2SB942, 2SB942A) Silicon PNP epitaxial planar type Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0942 −60 VCEO 16.7±0.3 1 2 3 −5 V Peak collector current ICP −8 A Collector current IC −4 A PC 40 W Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 V VEBO TC = 25°C 1.3±0.2 2.54±0.3 Emitter to base voltage Collector power dissipation 1.4±0.1 5.08±0.5 −80 2SB0942A 2.7±0.2 φ 3.1±0.1 −80 2SB0942A 2SB0942 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 4.2±0.2 5.5±0.2 Solder Dip (4.0) • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 7.5±0.2 ■ Features 4.2±0.2 0.7±0.1 For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SB0942 Collector cutoff current 2SB0942 ICEO 2SB0942A Emitter cutoff current Collector to emitter voltage ICES 2SB0942A 2SB0942 Conditions Max Unit VCE = −60 V, VBE = 0 −400 µA VCE = −80 V, VBE = 0 −400 VCE = −30 V, IB = 0 −700 VCE = −60 V, IB = 0 −700 IEBO VEB = −5 V, IC = 0 VCEO IC = −30 mA, IB = 0 hFE1 * VCE = −4 V, IC = −1 A 70 Base to emitter voltage hFE2 VCE = −4 V, IC = −3 A 15 VBE VCE = −4 V, IC = −3 A Collector to emitter saturation voltage VCE(sat) IC = −4 A, IB = − 0.4 A Typ −1 −60 µA mA V −80 2SB0942A Forward current transfer ratio Min 250 −2 −1.5 V V fT VCE = −10 V, IC = − 0.1 A, f = 10 MHz Turn-on time ton IC = −4 A, IB1 = − 0.4 A, IB2 = 0.4 A Storage time tstg Fall time tf 0.2 µs Transition frequency Note) *: Rank classification 30 MHz 0.2 µs 0.5 µs Rank Q P Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. hFE1 70 to 150 120 to 250 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0942, 2SB0942A Power Transistors PC T a IC VCE IC VBE –6 40 30 (1) 20 10 IB=–120mA –4 –60mA –3 –40mA –20mA –2 –10mA 20 40 60 80 100 120 140 160 –4 –2 –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) hFE IC Transition frequency fT (MHz) –1 25˚C TC=100˚C –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 1000 25˚C 100 TC=100˚C –25˚C 30 10 Collector current IC (A) –1 –3 t=1ms 10ms –1 DC – 0.3 – 0.03 – 0.01 –1 –3 –10 –30 2SB0942A 2SB0942 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) –1 –3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) IC 10 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 –3 30 3 Area of safe operation (ASO) –30 100 Collector current IC (A) –100 Non repetitive pulse TC=25˚C 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –2.0 VCE=–5V f=10MHz TC=25˚C 3000 3000 300 –1.6 fT I C 1000 –3 –1.2 VCE=–4V Forward current transfer ratio hFE –10 – 0.8 10000 IC/IB=10 –30 – 0.3 – 0.4 Base to emitter voltage VBE (V) 10000 ICP –25˚C 0 0 VCE(sat) IC –100 –10 TC=100˚C –5mA Ambient temperature Ta (˚C) – 0.1 25˚C –6 0 0 Collector current IC (A) –8 –8mA (4) 2 VCE=–4V –80mA –1 0 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C –100mA –5 (2) (3) –10 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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