Power Transistors 2SB0937, 2SB0937A (2SB937, 2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage VEBO –5 V Peak collector current ICP –4 A Collector current IC –2 A Collector power TC=25°C dissipation Ta=25°C Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB0937 current 2SB0937A Collector cutoff 2SB0937 current 2SB0937A Emitter cutoff current Collector to emitter 2SB0937 voltage 2SB0937A Forward current transfer ratio 6.0±0.3 1.0±0.1 R0.5 R0.5 0 to 0.4 1.1 max. 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Collector cutoff 3.4±0.3 2.54±0.3 W 1.3 ■ Electrical Characteristics 8.5±0.2 0.8±0.1 35 PC Junction temperature 2.0 V –80 VCEO 1:Base 2:Collector 3:Emitter N Type Package 3 14.7±0.5 2SB0937 2 +0.4 Collector to –60 VCBO 1 Unit 3.0–0.2 2SB0937A Ratings 4.4±0.5 base voltage 5.08±0.5 +0 2SB0937 10.5min. 2.54±0.3 (TC=25˚C) Symbol Collector to 0.5max. 1.5–0.4 Parameter 1.1max. 0.8±0.1 10.0±0.3 ■ Absolute Maximum Ratings 1.5max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 1.5±0.1 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 Conditions min typ max VCB = –60V, IE = 0 –1 VCB = –80V, IE = 0 –1 VCE = –30V, IB = 0 –2 VCE = –40V, IB = 0 –2 IEBO VEB = –5V, IC = 0 –2 VCEO IC = –30mA, IB = 0 hFE1 VCE = –4V, IC = –1A 1000 hFE2* VCE = –4V, IC = –2A 2000 ICBO ICEO –60 Unit mA mA mA V –80 10000 Base to emitter voltage VBE VCE = –4V, IC = –2A –2.8 V Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = –8mA –2.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 Internal Connection Rank classification Rank hFE2 Q IC = –2A, IB1 = –8mA, IB2 = 8mA P 20 MHz 0.4 µs 1.5 µs 0.5 µs C B 2000 to 5000 4000 to 10000 E Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistor 2SB0937, 2SB0937A PC — Ta IC — VCE IC — VBE –5 (1) 30 20 10 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA –4 –3 – 0.6mA –2 – 4.0mA – 0.2mA –1 25˚C TC=100˚C –4 –25˚C –2 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 VCE(sat) — IC TC=100˚C –25˚C – 0.3 25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 TC=100˚C 104 25˚C 1000 –25˚C 103 102 Collector current IC (A) –1 –3 Area of safe operation (ASO) –10 ICP –3 t=1ms IC 10ms 300ms – 0.3 – 0.03 -3 –10 –30 2SB0937A 2SB0937 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) 30 10 3 –1 –3 –10 –30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 103 –30 300 1 – 0.1 – 0.3 –10 Collector current IC (A) –100 –3.2 IE=0 f=1MHz TC=25˚C 3000 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 –2.4 Cob — VCB Collector output capacitance Cob (pF) Forward current transfer ratio hFE –3 –1.6 10000 VCE=–4V –10 –1 – 0.8 Base to emitter voltage VBE (V) hFE — IC IC/IB=250 – 0.01 –1 0 105 –30 –1 –5 Collector to emitter voltage VCE (V) –100 Collector to emitter saturation voltage VCE(sat) (V) –6 – 0.1mA (3) Collector current IC (A) –8 (2) 0 2 VCE=–4V Collector current IC (A) 40 –10 TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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