HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Sub-Component P/N Reference MMBT2907A_DIE Q1 PNP Transistor MMBTA06_DIE Q2 NPN Transistor • • • Device Type • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Schematic & Pin Configuration Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.016 grams (approximate) CQ1 EQ1 EQ2 Q1 Q2 MMBT2907A MMBTA06 BQ1 Top View CQ2 BQ2 Device Schematic Maximum Ratings: Total Device @TA = 25°C unless otherwise specified Characteristic Operating and Storage Junction Temperature Range Symbol VEBO Value -55 to +150 Unit °C Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Air (Note 3) Symbol PD RθJA Value 200 625 Unit mW °C/W Maximum Ratings: Sub-Component Devices @TA = 25°C unless otherwise specified Thermal Characteristics: Total Device Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Notes: Symbol VCBO VCEO VEBO IC Q1-PNP Transistor (MMBT2907A) -60 -60 -5.5 -600 Q2-NPN Transistor (MMBTA06) 80 65 6 500 Unit V V V mA 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. HBDM60V600W Document number: DS30701 Rev. 5 - 2 1 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL -60 -60 -5.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -10 -50 -50 V V V nA nA nA IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V hFE 100 100 100 100 50 ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.3 -0.5 V Base-Emitter Saturation Voltage VBE(SAT) ⎯ -0.95 -1.3 V IC = -100μA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Current Gain-Bandwidth Product fT 100 ⎯ MHz SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time ton td tr toff ts tr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 45 10 40 100 80 30 ns ns ns ns ns ns DC Current Gain Test Condition SMALL SIGNAL CHARACTERISTICS Electrical Characteristics: NPN (MMBTA06) Transistor (Q2) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS VCE = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO 80 65 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 100 V V V nA nA nA IC = 100μA, IE = 0 IC = 1mA, IB = 0 IE = 100μA, IC = 0 VCB = 80V, IE = 0 VCE = 90V, VBE = 0 VEB = 5V, IC = 0 VCE(SAT) VBE(ON) VBE(SAT) 250 100 ⎯ 0.7 ⎯ ⎯ ⎯ 0.2 0.75 ⎯ ⎯ ⎯ 0.4 0.8 0.95 ⎯ ⎯ V V V VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 5mA fT 100 ⎯ ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz hFE Current Gain-Bandwidth Product Notes: VCE = -2.0V, IC = -10mA, f = 100MHz Test Condition 4. Short duration pulse test used to minimize self-heating effect. HBDM60V600W Document number: DS30701 Rev. 5 - 2 2 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W Typical Characteristics @TA = 25°C unless otherwise specified PD, POWER DISSIPATION (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 200 PNP (MMBT2907A) Transistor (Q1) Plots: 30 -VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 C, CAPACITANCE (pF) 20 10 Cibo 5.0 Cobo 1.0 0.1 1.0 10 REVERSE VOLTAGE (V) Fig. 2 Typical Capacitance IC = 100mA 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 1 0.1 10 100 -IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 0.01 1,000 VCE = 5V IC IB = 10 0.5 TA = 150°C hFE, DC CURRENT GAIN -VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 300mA IC = 10mA 0 0.001 30 0.6 1.4 0.4 0.3 TA = 150°C TA = 25°C 0.2 0.1 0 100 TA = 25°C TA = -50°C 10 TA = -50°C 1 1 10 1,000 100 -IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current HBDM60V600W Document number: DS30701 Rev. 5 - 2 3 of 7 www.diodes.com 1,000 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current July 2008 1 © Diodes Incorporated HBDM60V600W 1,000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) -VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 TA = -50°C 0.8 0.7 100 0.6 TA = 25°C 0.5 0.4 T A = 150°C 0.3 0.2 0.1 10 1 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base Emitter Voltage vs. Collector Current 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain Bandwidth Product vs. Collector Current NPN (MMBTA06) Transistor (Q2) Plots 2.0 VCE, COLLECTOR EMITTER VOLTAGE (V) ICBO, COLLECTOR-BASE CURRENT (nA) 10 1 0.1 50 75 100 125 TA, AMBIENT TEMPERATURE (ºC) Fig. 8 Typical Collector-Cutoff Current vs. Ambient Temperature 1.4 IC = 30mA 1.2 IC = 10mA 1.0 0.8 0.6 IC = 100mA 0.4 IC = 1mA 0.2 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 9 Typical Collector Saturation Region 0.01 10,000 IC IB = 10 0.450 0.400 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.6 0 0.001 0.01 25 0.500 1.8 0.350 0.300 TA = 25°C 0.250 T A = 150°C 0.200 0.150 1,000 100 10 0.100 0.050 TA = -50°C 0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current 1 HBDM60V600W Document number: DS30701 Rev. 5 - 2 4 of 7 www.diodes.com 1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical DC Current Gain vs. Collector Current July 2008 © Diodes Incorporated HBDM60V600W 1,000 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 100 10 1 1 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Base Emitter Voltage vs. Collector Current 10 IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Gain Bandwidth Product vs. Collector Current Current Schematic along with Application Example: 9V-12V 36 R1 HBDM60V600W HBDM60V600W EQ1 MMBT2907A R3 MMBT2907A C1 Q1 D1 D2 BQ1 Q1 BQ1 0 Q4 Q3 Half H-Bridge Motor Half H-Bridge CQ2 R5 1k R4 CQ1 CQ1 CQ2 M MB TA0 6 R8 M MB TA0 6 Q2 D3 C2 D4 BQ2 1k Q2 BQ2 EQ2 Reverse Forward 0 Note: D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06) HBDM60V600W Document number: DS30701 Rev. 5 - 2 5 of 7 www.diodes.com July 2008 © Diodes Incorporated HBDM60V600W Application Example Schematic: (with Package Pinouts) 9V-12V R1 36 C1 U1 A1 1 NC C2 6 2 5 3 4 33k NC R3 A2 MMBD4448DW R4 BQ2 470 CQ2 1 2 U2 BQ1 BQ2 U4 BQ1 6 5 CQ2 Motor CQ1 EQ1 EQ2 3 4 HBDM60V600W Q1 R6 R2 C1 1 6 2 5 3 4 CQ1 EQ1 EQ2 470 U3 EQ1 BQ2 1 CQ2 2 3 INV5V0W HBDM60V600W C2 CQ1 6 BQ1 5 EQ2 4 R5 U5 A1 1 A2 2 A3 3 1k 6 C1 C2 1k 5 4 C3 MMBD4448HTW Reverse Forward Control Input 5V/0V Ordering Information (Note 5) Part Number HBDM60V600W-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information HB01 Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 HBDM60V600W Document number: DS30701 Rev. 5 - 2 2008 V Mar 3 2009 W Apr 4 May 5 HB01 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2010 X Jun 6 6 of 7 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D July 2008 © Diodes Incorporated HBDM60V600W Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. HBDM60V600W Document number: DS30701 Rev. 5 - 2 7 of 7 www.diodes.com July 2008 © Diodes Incorporated