Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device. • Industry Standard TO–220 Package • High Speed: Eoff = 60 mJ per Amp typical at 125°C • High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V • Low On–Voltage — 2.0 V typical at 8.0 A • Soft Recovery Free Wheeling Diode is included in the Package • Robust High Voltage Termination • ESD Protection Gate–Emitter Zener Diodes IGBT & DIODE IN TO–220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE C G G C E E CASE 221A–09 STYLE 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 15 11 22 Adc PD 96 0.77 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJC RθJA 1.3 2.3 65 °C/W TL 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. IGBT Motorola Motorola, Inc. 1998 Device Data 1 MGP11N60ED ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — — — — — 10 200 — — 50 — — — 1.6 1.5 2.0 1.9 — 2.4 4.0 — 6.0 10 8.0 — mV/°C gfe — 3.5 — Mhos Cies — 779 — pF Coes — 81 — Cres — 13 — td(on) — 46 — OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) V(BR)CES Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc mV/°C µAdc µAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 4.0 Adc) (VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 8.0 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time tr — 34 — td(off) — 102 — tf — 226 — Eoff — 0.32 0.40 Turn–On Switching Loss Eon — 0.11 — Total Switching Loss Ets — 0.43 — Turn–On Delay Time td(on) — 42 — tr — 26 — td(off) — 214 — tf — 228 — Eoff — 0.48 — Turn–On Switching Loss Eon — 0.16 — Total Switching Loss Ets — 0.64 — QT — 39.2 — Q1 — 8.7 — Q2 — 17.4 — — — 1.7 1.63 1.24 2.0 — — 2.3 Turn–Off Delay Time Fall Time Turn–Off Switching Loss (VCC = 360 Vdc, Vd IC = 8 8.0 0 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω) Energy losses include “tail” Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss (VCC = 360 Vdc, Vd IC = 8 8.0 0 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Gate Charge Vdc IC = 8 0 Adc (VCC = 360 Vdc, 8.0 Adc, VGE = 15 Vdc) ns mJ ns mJ nC DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 3.25 Adc) (IEC = 3.25 Adc, TJ = 125°C) (IEC = 6.5 Adc) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 VFEC Vdc (continued) Motorola IGBT Device Data MGP11N60ED ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit trr — 57 — ns ta — 18 — tb — 39 — QRR — 107 — µC trr — 91 — ns ta — 28 — tb — 63 — QRR — 275 — — 7.5 — 20 V 15 V DIODE CHARACTERISTICS — continued Reverse Recovery Time ((IF = 8 8.0 0 Ad Adc,, VR = 360 Vdc, Vd , dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time ((IF = 8 8.0 0 Ad Adc,, VR = 360 Vdc, Vd , dIF/dt = 200 A/µs, TJ = 125°C) Reverse Recovery Stored Charge µC INTERNAL PACKAGE INDUCTANCE LE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) 25 17.5 V 20 V TJ = 25°C 12.5 V IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 25 15 V 20 15 VGE = 10 V 10 5 0 17.5 V 12.5 V 20 15 VGE = 10 V 10 5 TJ = 125°C 0 2 0 4 8 6 6 8 Figure 2. Output Characteristics 12 8 TJ = 125°C 4 25°C 0 7 9 11 13 15 17 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics 16 5 4 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE = 100 V 5 ms PULSE WIDTH 20 2 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 24 IC , COLLECTOR CURRENT (AMPS) nH 2.25 VGE = 15 V 80 ms PULSE WIDTH 2.05 IC = 8.0 A 1.85 6.0 A 1.65 4.0 A 1.45 –50 –25 0 25 50 75 100 125 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Junction Temperature Motorola IGBT Device Data 150 3 TJ = 25°C VGE = 0 V 1600 C, CAPACITANCE (pF) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) MGP11N60ED Cies 800 Coes Cres 0 0 5 10 15 20 Q1 Q2 8 TJ = 25°C VCC = 300 V IC = 8.0 A 4 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus Total Charge 0.8 0.75 IC = 8.0 A ETS , TOTAL ENERGY LOSSES (mJ) ETS , TOTAL ENERGY LOSSES (mJ) 12 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TJ = 125°C VDD = 360 V VGE = 15 V 0.65 6.0 A 0.55 0.45 4.0 A 0.35 0.25 VCC = 360 V VGE = 15 V RG = 20 W 0.7 0.6 IC = 8.0 A 6.0 A 0.5 0.4 4.0 A 0.3 0.2 0.1 0 5 15 25 35 45 –50 55 –25 0 25 50 75 100 125 RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Total Energy Losses versus Gate Resistance Figure 8. Total Energy Losses versus Junction Temperature 150 0.6 0.9 TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 0.8 0.7 0.6 Eoff , TURN–OFF ENERGY LOSSES (mJ) ETS , TOTAL ENERGY LOSSES (mJ) QT 0 0.15 4 16 25 0.85 0.5 0.4 0.3 0.2 0.1 0 20 TJ = 125°C VDD = 360 V VGE = 15 V 0.5 IC = 8.0 A 0.4 6.0 A 0.3 4.0 A 0.2 0 2 4 6 8 10 5 15 25 35 IC, COLLECTOR CURRENT (AMPS) RG, GATE RESISTANCE (OHMS) Figure 9. Total Energy Losses versus Collector Current Figure 10. Turn–Off Losses versus Gate Resistance 45 Motorola IGBT Device Data VCC = 360 V VGE = 15 V RG = 20 W 0.6 Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) MGP11N60ED IC = 8.0 A 0.4 6.0 A 4.0 A 0.2 0 TJ = 125°C VCC = 360 V VGE = 15 V RG = 20 W 0.6 0.4 0.2 0 –50 –25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 4 6 8 10 IC, COLLECTOR CURRENT (AMPS) Figure 11. Turn–Off Losses versus Junction Temperature Figure 12. Turn–Off Losses versus Collector Current 100 100 TJ = 125°C IC , COLLECTOR CURRENT (AMPS) IF , INSTANTANEOUS FORWARD CURRENT (AMPS) 2 25°C 10 1 10 TJ = 125°C RGE = 20 W VGE = 15 V 1 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 13. Forward Characteristics versus Current Figure 14. Reverse Biased Safe Operating Area Motorola IGBT Device Data 1000 5 MGP11N60ED PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N CASE 221A–09 TO–220AB ISSUE Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 GATE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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