Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C, 720 V • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • UL Motorola Preferred Devices 10, 15, 25 A, 1200 V HYBRID POWER MODULES SL SUFFIX CASE 464A–01 Style 1 Recognized ORDERING INFORMATION Device Current Rating Package MHPM6B10N120SL MHPM6B15N120SL MHPM6B25N120SL 10 15 25 464A–01 Style 1 MHPM6B10N120SS MHPM6B15N120SS MHPM6B25N120SS 10 15 25 464B–02 Style 1 SS SUFFIX CASE 464B–02 Style 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current (TC = 80°C) 10A120 15A120 25A120 ICmax 10 15 25 A Repetitive Peak IGBT Collector Current (1) 10A120 15A120 25A120 IC(pk) 20 30 50 A Continuous Diode Current (TC = 25°C) 10A120 15A120 25A120 IFmax 10 15 25 A Continuous Diode Current (TC = 80°C) 10A120 15A120 25A120 IF80 8.3 11 14 A Repetitive Peak Diode Current (1) 10A120 15A120 25A120 IF(pk) 20 30 50 A IGBT Power Dissipation per die (TC = 95°C) 10A120 15A120 25A120 PD 41 50 65 W Diode Power Dissipation per die (TC = 95°C) 10A120 15A120 25A120 PD 16 22 27 W (1) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. Motorola IGBT Device Data Motorola, Inc. 1998 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Junction Temperature Range Rating TJ – 40 to +150 °C Short Circuit Duration (VCE = 720 V, TJ = 125°C) tsc 10 ms VISO 2500 Vac Operating Case Temperature Range TC – 40 to +95 °C Storage Temperature Range Tstg – 40 to +150 °C — 1.4 Nm Isolation Voltage, Pin to Baseplate Mounting Torque — Heat Sink Mounting Holes ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES — — ± 20 µA Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) ICES — 5.0 100 µA VGE(th) 5.0 6.0 7.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V(BR)CES 1200 — — V Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125°C VCE(SAT) 1.7 — 2.35 2.69 2.9 — V gfe — — — 8.3 14 19 — — — mho VF 1.7 — 2.35 1.9 3.1 — V 10A120 15A120 25A120 Cies — — — 1880 2620 4770 — — — pF Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120 15A120 25A120 QT — — — 65 87 150 — — — nC — — — 82 82 68 — — — — — — 174 240 330 — — — — — — 84 105 150 — — — — — — 640 780 1060 — — — — — — 39 48 70 47 58 84 — — — 1.5 2.7 4.6 1.8 3.3 5.6 Characteristic DC AND SMALL SIGNAL CHARACTERISTICS Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Forward Transconductance 10A120 15A120 25A120 Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125°C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz) INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) Recommended Gate Resistor (RG(on) = RG(off)) RG 10A120 15A120 25A120 Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) td(on) Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) ns td(off) ns tf 10A120 15A120 25A120 Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) ns Eon 10A120 15A120 25A120 2 ns tr 10A120 15A120 25A120 W mJ Motorola IGBT Device Data Characteristic Symbol Min Typ Max Unit INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) – continued Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Eoff — — — 1.1 1.7 3.0 1.4 2.1 3.5 mJ Diode Reverse Recovery Time (IF = IFmax, V = 600 V) 10A120 15A120 25A120 trr — — — 95 110 124 — — — ns Peak Reverse Recovery Current (IF = IFmax, V = 600 V) 10A120 15A120 25A120 Irrm — — — 8.0 9.7 11.5 — — — A Diode Stored Charge (IF = IFmax, V = 600 V) 10A120 15A120 25A120 Qrr — — — 550 600 740 — — — nC Symbol Min Typ Max Unit — — — 160 220 310 — — — — — — 93 110 160 — — — — — — 680 850 1140 — — — — — — 51 60 76 — — — — — — 2.0 3.6 6.1 — — — — — — 1.5 2.4 4.2 — — — — — — 160 210 250 — — — — — — 11.0 14.1 17.4 — — — INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) Characteristic Turn–On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) td(on) tr 10A120 15A120 25A120 Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) ns td(off) ns tf 10A120 15A120 25A120 Turn–On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) ns Eon 10A120 15A120 25A120 Turn–Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) mJ Eoff 10A120 15A120 25A120 Diode Reverse Recovery Time (IF = IFmax, V = 600 V) mJ trr 10A120 15A120 25A120 Peak Reverse Recovery Current (IF = IFmax, V = 600 V) ns Irrm 10A120 15A120 25A120 Diode Stored Charge (IF = IFmax, V = 600 V) ns A 10A120 15A120 25A120 Qrr — — — 995 1770 2460 — — — nC Thermal Resistance — IGBT 10A120 15A120 25A120 RqJC — — — 1.1 0.89 0.68 1.3 1.1 0.85 °C/W Thermal Resistance — Diode 10A120 15A120 25A120 RqJC — — — 2.8 2.0 1.6 3.5 2.5 2.0 °C/W THERMAL CHARACTERISTICS (Each Die) Motorola IGBT Device Data 3 TYPICAL CHARACTERISTICS (see also application information) 2.0 2.0 IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax ) IF, FORWARD CURRENT (NORMALIZED: I F/I Fmax ) TJ = 125°C 1.5 25°C 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 1.2 1.0 0.8 9.0 V 0.6 0.4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF, FORWARD VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. Forward Characteristics — Free–Wheeling Diode Figure 2. Forward Characteristics, TJ = 25°C 4.5 16 1.6 VGE, GATE–EMITTER VOLTAGE (VOLTS) 12 V VGE = 18 V 15 V 1.8 IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax ) 1.4 3.5 2.0 TJ = 125°C 1.4 1.2 1.0 0.8 0.6 0.4 9.0 V 0.2 0 14 10N120 15N120 12 25N120 10 8.0 6.0 VCE = 400 V VCE = 500 V VCE = 600 V 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 20 40 60 80 100 120 140 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 3. Forward Characteristics, TJ = 125°C Figure 4. Gate–Emitter Voltage versus Total Gate Charge 160 10 t, TIME (NORMALIZED: TIME/t d(off)typ) 10 t, TIME (NORMALIZED: TIME/t d(off)typ) 1.6 12 V 0.2 0 0 TJ = 125°C TJ = 25°C td(off) 1.0 VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 0.1 tf VCE = 600 V VGE = 15 V IC = ICmax td(off) 1.0 0.1 tf TJ = 125°C TJ = 25°C 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) Figure 5. Inductive Switching Times versus Collector Current 4 VGE = 18 V 15 V TJ = 25°C 1.8 2.2 0 0.5 1.0 1.5 2.0 2.5 RG, GATE RESISTANCE (NORMALIZED: RG/RG(RECOMMENDED)) 1.0 3.0 Figure 6. Inductive Switching Times versus Gate Resistance Motorola IGBT Device Data TYPICAL CHARACTERISTICS (see also application information) 6.0 2.5 td(on) 2.0 t, TIME (NORMALIZED: TIME/t r(typ) ) t, TIME (NORMALIZED: TIME/t r(typ)) 25°C TJ = 125°C 1.5 TJ = 125°C 25°C 1.0 tr VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 0.5 5.0 25°C 4.0 TJ = 125°C 3.0 TJ = 125°C 0 2.0 td(on) 1.0 tr 0 0 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2.5 1.0 1.5 2.0 RG, GATE RESISTANCE (NORMALIZED: RG/RG(RECOMMENDED)) 0.5 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) 2.5 Eon, TJ = 125°C 2.0 Eoff, TJ = 125°C Eon, TJ = 25°C 1.5 Eoff, TJ = 25°C 1.0 VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 Eon, TJ = 125°C Eon, TJ = 25°C 2.5 2.0 Eoff, TJ = 125°C 1.5 Eoff, TJ = 25°C 1.0 VCE = 600 V VGE = 15 V IC = ICmax 0.5 0 2.2 0 0.5 1.0 1.5 2.0 2.5 RG, GATE RESISTANCE (NORMALIZED: RG/RG(RECOMMENDED)) IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) 100 TJ = 125°C Irr 25°C TJ = 125°C trr 1.0 25°C V = 600 V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IF, FORWARD CURRENT (NORMALIZED: IF/IFmax) Figure 11. Reverse Recovery Characteristics — Free–Wheeling Diode Motorola IGBT Device Data 3.0 Figure 10. Turn–On and Turn–Off Energy Losses versus Gate Resistance 2.2 C, CAPACITANCE (NORMALIZED TO I Cmax (pF/A)) Figure 9. Turn–On and Turn–Off Energy Losses versus Collector Current 10 3.0 Figure 8. Inductive Switching Times versus Gate Resistance E on , TURN–ON AND E off , TURN–OFF ENERGY LOSSES (NORMALIZED: E/E off(typ) ) E on , TURN–ON AND E off , TURN–OFF ENERGY LOSSES (NORMALIZED: E/E off(typ) ) Figure 7. Inductive Switching Times versus Collector Current Irr , PEAK REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (NORMALIZED: t rr /t rr(typ), 10 * I rr /I rr(typ)) 25°C 1000 Ciss 100 Coss 10 Crss 1.0 0 5.0 10 15 20 25 30 35 40 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 12. Capacitance Variation 5 TYPICAL CHARACTERISTICS (see also application information) 1.0 VGE = 15 V RG = RG(RECOMMENDED) TJ = 25°C 60 25N120 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) IC , COLLECTOR CURRENT (AMPS) 70 50 40 15N120 30 10N120 20 10 0 DIODE IGBT 0.1 0.01 0.001 200 0 400 600 800 1000 1200 1400 1600 0.01 0.1 1.0 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) t, TIME (ms) Figure 13. Reverse Biased Safe Operating Area (RBSOA) Figure 14. Thermal Response 10,000 90% GATE DRIVE OUTPUT td(on) tr td(off) 10% tf 90% IC 10% 3% VCE Eon 1.0 ms Eoff Figure 15. Timing Definitions +15 V +15 V MBRS130LT3 MBRS130LT3 RG(on) RG MC33153 MBRS130LT3 MC33153 MBRS130LT3 RG(off) MBRS130LT3 Figure 16. Common Gate Drive Circuit 6 Figure 17. Recommended Gate Drive Circuit Motorola IGBT Device Data APPLICATION INFORMATION These modules are designed to be used as the power stage of a three–phase AC induction motor drive. They may be used for up to 460 VAC applications. Switching frequencies up to 15 kHz were considered in the design. Gate resistance recommendations have been listed. These choices were based on the common gate drive circuit shown in Figure 16. However, significant improvements in Eoff may be gained by either of two methods: use of a negative gate bias, or use of the gate drive shown in Figure 17. Separate turn–on and turn–off gate resistors give the best results; in this case, RG(off) should be chosen as small as possible while limiting current to prevent damage to the gate drive IC. Designers should also note that turn–on and turn– off delay times are measured from the rising and falling edges of the gate drive output, not the gate voltage waveform. Since all three modules use similar technology, most of the graphs showing typical performance have been normalized. Actual values are listed for each size in the table, “Electrical Characteristics.” Data on the graphs reflect performance using the common gate drive circuit shown in Figure 16. The first three curves, showing DC characteristics, are normalized for ICmax. The devices all perform similarly at rated current. The curves extend to IC(pk), the maximum allowable instantaneous current. The next two graphs, turn–off and turn–on times versus IC, are also normalized for ICmax. In addition, the time scales are normalized. Turn–off times are normalized to td(off) at 25°C at rated current with recommended RG, while turn–on times are normalized to tr at 25°C at rated current with recommended RG . The graphs showing switching times as a function of RG are similarly normalized. RG has been normalized to the rec- 1 ommended value listed under “Electrical Characteristics.” The time axes are normalized exactly as for the corresponding graphs showing variation with IC. Similar transformations have been made for the next two figures, showing Eon and Eoff. Energies have been normalized to Eoff at 25°C at ICmax with the recommended RG. IC has been normalized to ICmax, and RG has been normalized to the recommended value. Reverse recovery characteristics are also normalized. IC has again been normalized to ICmax. Reverse recovery time trr has been normalized to trr at 25°C at ICmax. Peak reverse recovery current Irrm has been normalized to Irrm at 25°C at ICmax, then multiplied by 10. Capacitance has been normalized to device rated ICmax. Since all modules are rated for the same voltage, the voltage scale on Figure 11 does not need to be normalized. Typical transient thermal impedance is shown for a diode and for an IGBT. All diodes behave quite similarly, as do all IGBTs. The last two graphs, VGE versus QG and RBSOA, are not normalized. Many issues beyond the ratings must be considered in a system design. Dynamic characteristics can all be affected by external circuit parameters. For example, excessive bus inductance can dramatically increase voltage overshoot during switching, increasing the switching energy. The choice of gate drive IC can have quite a large effect on rise and fall times, corresponding to differences in switching energies. In many cases, this can be compensated by simply changing the gate resistor accordingly — a gate driver with a lower drive capability requires a smaller gate resistor. Ultimately, the module must be tested in the final system to characterize its performance. 2 Q1 Q2 17 16 15 14 3 Q3 D1 Q4 D2 13 12 11 10 4 Q5 D3 Q6 D4 9 8 7 5 D5 D6 6 Figure 18. Schematic of Module, Showing Pin–Out Motorola IGBT Device Data 7 RECOMMENDED PCB LAYOUT MODULE SIDE VIEW OF BOARD (Typical Dimensions in mm) 107.75 16.0 15.24 PIN 1 1.65 5.8 45.75 32.0 16.0 KEEP–OUT ZONES (x4) 41.91 11.0 3.81 16.0 11.43 OPTIONAL NON–PLATED THRU–HOLES (x2) PLATED THRU–HOLES (x17) Figure 19. Package Footprint NOTES: 1. Package is symmetrical. 2. Dimension of plated thru–holes indicates finished hole size after plating. 3. Non–plated thru–holes shown for optional access to heat sink mounting screws. 8 Motorola IGBT Device Data PACKAGE DIMENSIONS A Q 4 PL U Y 2 PL F 4 PL 1 B 2 3 4 MILLIMETERS DIM MIN MAX A ––– 107.75 B ––– 45.75 C 16.37 17.64 D 0.77 1.53 E 12.49 13.51 F 14.86 15.62 G 3.43 4.19 H 41.53 42.29 K 29.99 31.01 L 6.29 7.31 M 1.59 2.61 N 10.49 11.51 P 31.49 32.51 Q 2.00 2.60 R 20.57 21.33 S 15.62 16.38 U 92.49 93.51 V 104.17 105.44 W 37.49 38.51 X 15.37 16.64 Y 5.25 5.75 Z 11.05 11.81 5 H P N R 17 16 15 14 13 12 11 10 9 8 7 6 S G Z 6 PL M 5 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD. D 17 PL INCHES MIN MAX ––– 4.242 ––– 1.801 0.644 0.694 0.030 0.060 0.492 0.532 0.585 0.615 0.135 0.165 1.635 1.665 1.181 1.221 0.248 0.288 0.063 0.103 0.413 0.453 1.240 1.280 0.079 0.103 0.810 0.840 0.615 0.645 3.641 3.681 4.101 4.151 1.476 1.516 0.605 0.655 0.207 0.227 0.435 0.465 K C X V E L W CASE 464A–01 ISSUE A Motorola IGBT Device Data 9 PACKAGE DIMENSIONS A Q 4 PL U Y 2 PL F 4 PL 1 B 2 3 4 MILLIMETERS DIM MIN MAX A ––– 107.75 B ––– 45.75 C 16.37 17.64 D 0.77 1.53 E 12.49 13.51 F 14.86 15.62 G 3.43 4.19 H 41.53 42.29 K 19.81 20.60 L 6.29 7.31 M 1.59 2.61 N 10.49 11.51 P 31.49 32.51 Q 2.00 2.60 R 20.57 21.33 S 15.62 16.38 U 92.49 93.51 V 104.17 105.44 W 37.49 38.51 X 15.37 16.64 Y 5.25 5.75 Z 11.05 11.81 5 H P N R 17 16 15 14 13 12 11 10 9 8 7 6 S G Z 6 PL M 5 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD. INCHES MIN MAX ––– 4.242 ––– 1.801 0.644 0.694 0.030 0.060 0.492 0.532 0.585 0.615 0.135 0.165 1.635 1.665 0.780 0.881 0.248 0.288 0.063 0.103 0.413 0.453 1.240 1.280 0.079 0.103 0.810 0.840 0.615 0.645 3.641 3.681 4.101 4.151 1.476 1.516 0.605 0.655 0.207 0.227 0.435 0.465 D 17 PL C X V K E L W CASE 464B–02 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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