ONSEMI NTHD4102PT1

NTHD4102P
Power MOSFET
−20 V, −4.1 A, Dual P−Channel ChipFETt
Features
• Offers an Ultra Low RDS(ON) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
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V(BR)DSS
RDS(ON) TYP
Environments such as Portable Electronics
64 mW @ −4.5 V
• Simplifies Circuit Design since Additional Boost Circuits for Gate
•
•
ID MAX
−20 V
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb−Free Package is Available
85 mW @ −2.5 V
−4.1 A
120 mW @ −1.8 V
S1
S2
Applications
• Optimized for Battery and Load Management Applications in
•
•
G1
G2
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
Charge Control in Battery Chargers
Buck and Boost Converters
D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
P−Channel MOSFET
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
"8.0
V
ID
−2.9
A
Continuous Drain
Current (Note 1)
Steady State
t ≤ 10 s
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
−2.1
TA = 25°C
−4.1
Steady State
t ≤ 10 s
tp = 10 ms
PD
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
W
1.1
2.1
D1 8
1 S1
1
8
D1 7
2 G1
2
7
D2 6
3 S2
3
D2 5
4 G2
4
C7 M
G
Pulsed Drain
Current
TA = 25°C
D2
IDM
−13.8
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−1.1
A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TL
260
°C
C7 = Specific Device Code
M = Month Code
G
= Pb−Free Package
Symbol
Max
Unit
ORDERING INFORMATION
113
°C/W
Operating Junction and Storage Temperature
6
5
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient, Steady State (Note 1)
Junction−to−Ambient, t ≤ 10s (Note 1)
RqJA
60
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 5
1
Device
Package
Shipping †
NTHD4102PT1
ChipFET
3000/Tape & Reel
NTHD4102PT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD4102P/D
NTHD4102P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(Br)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(Br)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
−15
VGS = 0 V
VDS = −16 V
mV/°C
TJ = 25°C
−1.0
TJ = 85°C
−5.0
IGSS
VDS = 0 V, VGS = "8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
mA
"100
nA
−1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(ON)
Forward Transconductance
gFS
−0.45
2.7
mV/°C
VGS = −4.5 V, ID = −2.9 A
64
80
mW
VGS = −2.5 V, ID = −2.2 A
85
110
VDS = −1.8 V, ID = −1.0 A
120
170
VDS = −10 V, ID = −2.9 A
7.0
S
750
pF
CHARGES, CAPACITANCES, AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
100
45
QG(TOT)
7.6
VGS = −4.5 V, VDS = −16 V,
ID = −2.6 A
8.6
nC
ns
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.3
2.6
td(ON)
5.5
10
12
25
32
40
23
35
−0.8
−1.2
V
20
40
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
VGS = −4.5 V, VDD = −16 V,
ID = −2.6 A, RG = 2.0 W
td(OFF)
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −1.1 A
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.0 A
QRR
15
5
0.01
2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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2
mC
NTHD4102P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
8
−2.4 V
7
6
5
4
3
2
−1.8 V
1
−1.6 V
−1.4 V
0
0
1
2
3
4
5
7
6
8
7
6
5
4
3
125°C
2
25°C
1
TJ = −55°C
0
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.5
1
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
4
1.5
0.2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.18
0.16
VGS = −2.5 V
0.14
0.12
0.1
VGS = −4.5 V
0.08
0.06
0.04
VGS = −4.5 V
1.3
1.1
0.9
0.7
0.02
0.5
−50
0
2
3
6
4
5
−ID, DRAIN CURRENT (AMPS)
−25
0
25
VGS = 0 V
1000
TJ = 125°C
TJ = 100°C
100
10
1
TJ = 25°C
0.1
3
75
100
125
Figure 4. On−Resistance Variation with
Temperature
10000
2
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
9
TJ = 25°C
VGS = −10 V to −2.8 V
9
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
4
5
6
7
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. Drain−to−Source Leakage Current
vs. Voltage
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3
8
150
NTHD4102P
1000
TJ = 25°C
C, CAPACITANCE (pF)
900
800
700
Ciss
600
500
400
300
200
100
Coss
Crss
0
0
2
4
6
8
10
12
14
16
18
20
−VGS −VDS
5
QT
4
3
Q2
Q1
2
1
ID = −2.7 A
TJ = 25°C
0
1
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
2
3
5
6
Qg, TOTAL GATE CHARGE (nC)
7
8
Figure 7. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
Figure 6. Capacitance Variation
1000
5
−IS, SOURCE CURRENT (AMPS)
VDD = −10 V
ID = −1.0 A
VGS = −4.5 V
100
td(off)
tf
tr
td(on)
10
1
1
10
VGS = 0 V
TJ = 25°C
4
3
2
1
0
0.4
100
0.5
0.6
0.7
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
10
10 ms
1
100 ms
1 ms
10 ms
VGS = −8 V
SINGLE PULSE
TC = 25°C
0.01
0.1
0.9
1.0
1.1
1.2
Figure 9. Diode Forward Voltage vs. Current
100
0.1
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
−I D, DRAIN CURRENT (AMPS)
t, TIME (ns)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NTHD4102P
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
D
8
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
3
e1
4
b
c
e
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
A
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
DIM
A
b
c
D
E
e
e1
L
HE
q
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
MIN
0.039
0.010
0.004
0.116
0.061
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
0.05 (0.002)
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.092
0.043
0.635
0.025
0.178
0.007
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
mm Ǔ
ǒinches
0.66
0.026
Basic
0.254
0.010
SCALE 20:1
Style 2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
NTHD4102P
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTHD4102P/D