ONSEMI 2N7000RLRA

2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
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Symbol
Value
Unit
Drain Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
VGS
VGSM
±20
±40
Vdc
Vpk
ID
IDM
200
500
PD
350
2.8
mW
mW/°C
TJ, Tstg
–55 to
+150
°C
Symbol
Max
Unit
RθJA
357
°C/W
TL
300
°C
Drain Current
– Continuous
– Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
200 mAMPS
60 VOLTS
RDS(on) = 5 Ω
N–Channel
D
mAdc
G
S
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
TO–92
CASE 29
Style 22
12
3
MARKING DIAGRAM
& PIN ASSIGNMENT
2N7000
YWW
1
Source
3
Drain
2
Gate
Y
WW
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1
Publication Order Number:
2N7000/D
2N7000
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)DSS
60
–
Vdc
–
–
1.0
1.0
µAdc
mAdc
IGSSF
–
–10
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
3.0
Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)
–
–
5.0
6.0
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
–
–
2.5
0.45
On–State Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Id(on)
75
–
mAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
gfs
100
–
µmhos
Ciss
–
60
pF
Coss
–
25
Crss
–
5.0
ton
–
10
toff
–
10
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS
Gate–Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Ohm
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
((VDS = 25 V,, VGS = 0,,
f=1
1.0
0 MH
MHz))
SWITCHING CHARACTERISTICS (Note 1.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 15 V, ID = 500 mA,
RG = 25 , RL = 30 , Vgen = 10 V)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
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2
ns
2N7000
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
VGS = 10 V
1.4
9V
1.2
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
9.0
0.8
125°C
0.6
0.4
0.2
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
10
+100
+140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
Figure 3. Temperature versus Static
Drain–Source On–Resistance
-20
+20
+60
T, TEMPERATURE (°C)
+100
Figure 4. Temperature versus Gate
Threshold Voltage
ORDERING INFORMATION
Device
9.0
Figure 2. Transfer Characteristics
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-55°C
Package
Shipping
2N7000
TO–92
1000 Unit/Box
2N7000RLRA
TO–92
2000 Tape & Reel
2N7000RLRM
TO–92
2000 Ammo Pack
2N7000RLRP
TO–92
2000 Ammo Pack
2N7000ZL1
TO–92
2000 Ammo Pack
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3
+140
2N7000
PACKAGE DIMENSIONS
TO–92
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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PUBLICATION ORDERING INFORMATION
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Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
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Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
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4
2N7000/D