ETC NTP27N06/D

NTP27N06
Advance Information
Power MOSFET
27 Amps, 60 Volts
N–Channel TO–220
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Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
27 AMPERES
60 VOLTS
RDS(on) = 46 mΩ
Features
•
•
•
•
•
•
•
•
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
N–Channel
D
G
Typical Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
S
MARKING DIAGRAM
& PIN ASSIGNMENT
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 10 MΩ)
VDGR
60
Vdc
VGS
VGS
±20
±30
Rating
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp ≤ 10 µs)
1
27
15
80
Adc
PD
88.2
0.59
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 0.3 mH, IL(pk) = 27 A, VDS = 60 Vdc)
EAS
Thermal Resistance – Junction–to–Case
RθJC
1.7
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
TO–220AB
CASE 221A
STYLE 5
Vdc
ID
ID
IDM
Total Power Dissipation @ TA = 25°C
Derate above 25°C
4
Drain
4
2
NTP27N06
LLYWW
1
Gate
3
3
Source
2
Drain
Apk
NTP27N06
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
mJ
ORDERING INFORMATION
109
Device
NTP27N06
Package
Shipping
TO–220AB
50 Units/Rail
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
NTP27N06/D
NTP27N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
60
–
70
79.4
–
–
–
–
–
–
1.0
10
–
–
±100
2.0
–
2.8
6.9
4.0
–
–
37.5
46
–
–
1.05
2.12
1.5
–
gFS
–
13.2
–
mhos
Ciss
–
725
1015
pF
Coss
–
213
300
Crss
–
58
120
td(on)
–
13.6
30
tr
–
62.7
125
td(off)
–
26.6
60
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 1.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (Note 1.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (Note 1.)
(VGS = 10 Vdc, ID = 13.5 Adc)
RDS(on)
Static Drain–to–Source On–Resistance (Note 1.)
(VGS = 10 Vdc, ID = 27 Adc)
(VGS = 10 Vdc, ID = 13.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 6.0 Adc)
Vdc
mV/°C
m
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vd
Vdc, VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 27 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 Ω) (Note 1.)
Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 27 Adc,
Ad
VGS = 10 Vdc) (Note 1.)
tf
–
70.4
140
QT
–
21.2
30
Q1
–
5.6
–
Q2
–
7.3
–
–
–
1.05
0.93
1.25
–
trr
–
42
–
ta
–
26
–
tb
–
16
–
QRR
–
0.07
–
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
VSD
Forward On–Voltage
(IS = 27 Adc, VGS = 0 Vdc) (Note 1.)
(IS = 27 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 27 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/µs) (Note 1.)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
Vdc
ns
µc
NTP27N06
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
SEATING
PLANE
–T–
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
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3
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NTP27N06
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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4
NTP27N06/D