NTP8N50, NTB8N50 Preferred Device Advance Information Power MOSFET 8 Amps, 500 Volts N–Channel TO–220 and D2PAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 8 AMPERES 500 VOLTS RDS(on) = 750 mΩ Features • • • • • • Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified N–Channel D Typical Applications • • • • Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits G 4 S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol 1 Value VDSS 500 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Vdc Vdc VGS VGSM 20 40 3 ID ID IDM 8.0 6.2 28 PD 202 1.61 Watts W/°C –55 to 150 °C 1 2 3 Adc Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range TJ, Tstg Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 8 A, L = 10 mH, RG = 25 Ω) EAS Thermal Resistance – Junction–to–Case – Junction–to–Ambient – Junction–to–Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 320 Source °C/W TL 260 Gate NTx8N50 LL Y WW Drain Source = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device °C This document contains information on a new product. Specifications and information herein are subject to change without notice. November, 2000 – Rev. 1 NTP8N50 LLYWW mJ 1. When surface mounted to an FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2000 NTB8N50 LLYWW Drain 0.62 62.5 50 Drain Drain Gate RθJC RθJA RθJA D2PAK CASE 418B STYLE 2 TO–220AB CASE 221A STYLE 5 MARKING DIAGRAMS AND PIN ASSIGNMENTS Drain – Continuous – Continuous @ 100°C – Single Pulse (tp10 µs) 2 Unit Drain–Source Voltage Gate–Source Voltage – Continuous – Non–Repetitive (tp10 ms) 4 1 Package Shipping NTP8N50 TO–220AB 50 Units/Rail NTB8N50 D2PAK 50 Units/Rail NTB8N50T4 D2PAK 800/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: NTP8N50/D NTP8N50, NTB8N50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 500 – – 560 – – – – – – 10 100 – – – – 100 100 2.0 – 2.6 6.5 4.0 – mV/°C – 600 750 mOhm – – – – 7.2 6.3 gFS 4.0 7.0 – Mhos Ciss – 1530 2140 pF Coss – 380 530 Crss – 15 30 td(on) – 14 30 tr – 17 30 td(off) – 34 70 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Collector Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ =125°C) Vdc µAdc IDSS Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS(f) IGSS(r) mV/°C nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage ID = 0.25 mA, VDS = VGS Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 4.0 Adc) RDS(on) Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 8.0 Adc) (VGS = 10 Vdc, ID = 4.0 Adc, TJ = 125°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn–On Delay Time (VDD = 250 Vdc, ID = 12 Adc, VGS = 10 Vdc, Vdc RG = 9.1 Ω) Rise Time Turn–Off Delay Time Fall Time Gate Charge (VDS = 400 Vdc, ID = 8.0 Adc, VGS = 10 Vdc) tf – 25 50 QT – 25 40 Q1 – 6.0 – Q2 – 8.0 – Q3 – 12 – – – 0.9 0.8 1.1 – trr – 375 – ta – 155 – tb – 220 – QRR – 2.75 – – – 3.5 4.5 – – – 7.5 – ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (Note 2.) VSD (IS = 8.0 Adc, VGS = 0 Vdc) (IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 8.0 8 0 Adc, Adc VGS = 0 Vdc, Vdc dIS/dt = 100 A/µs) Reverse Recovery Stored Charge Vdc ns µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 nH NTP8N50, NTB8N50 PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA SEATING PLANE –T– B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN D2PAK CASE 418B–03 ISSUE D C E V –B– 4 A 1 2 3 S –T– SEATING PLANE K J G D 3 PL 0.13 (0.005) H M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 3 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 NTP8N50, NTB8N50 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 4 NTP8N50/D