SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 IC/IB=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 0 0 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC VCE=10V 240 ABSOLUTE MAXIMUM RATINGS. 0.2 IC/IB=10 IC/IB=50 1mA -55 °C +25 ° C +100 ° C 10A IC/IB=10 1.0 +100 ° C +25 °C 0.6 -55 ° C +25 ° C +100 ° C 120 0.4 -55 ° C 80 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 200 160 PARAMETER PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 140 V IC=100µA VCEO(sus) 120 V IC=10mA* V(BR)EBO 5 0.2 V IE=100µA Collector Cut-Off Currents ICBO 100 nA VCB=120V ICES 100 nA VCE=120V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.3 V V IC=250mA, IB=25mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=500mA, VCE=10V* Static Forward Current Transfer Ratio hFE 100 100 60 20 Transition Frequency fT 100 Collector-Base Breakdown Voltage Cobo 40 0 0 1mA 10mA 100mA 1A 1mA 10A 10mA 100mA IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 1A 10A 10 VCE=10V 1.0 1 0.8 -55 ° C 0.6 +25 ° C 0.4 +100 ° C 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 0.2 0 0.001 1mA 10mA 100mA 1A 10A 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC-Collector Current VBE(on) v IC Safe Operating Area MAX. 1000 IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 122 3 - 121 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 IC/IB=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 0 0 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC VCE=10V 240 ABSOLUTE MAXIMUM RATINGS. 0.2 IC/IB=10 IC/IB=50 1mA -55 °C +25 ° C +100 ° C 10A IC/IB=10 1.0 +100 ° C +25 °C 0.6 -55 ° C +25 ° C +100 ° C 120 0.4 -55 ° C 80 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 200 160 PARAMETER PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 140 V IC=100µA VCEO(sus) 120 V IC=10mA* V(BR)EBO 5 0.2 V IE=100µA Collector Cut-Off Currents ICBO 100 nA VCB=120V ICES 100 nA VCE=120V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.3 V V IC=250mA, IB=25mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=500mA, VCE=10V* Static Forward Current Transfer Ratio hFE 100 100 60 20 Transition Frequency fT 100 Collector-Base Breakdown Voltage Cobo 40 0 0 1mA 10mA 100mA 1A 1mA 10A 10mA 100mA IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 1A 10A 10 VCE=10V 1.0 1 0.8 -55 ° C 0.6 +25 ° C 0.4 +100 ° C 0.1 DC 1s 100ms 10ms 1ms 100µs 0.01 0.2 0 0.001 1mA 10mA 100mA 1A 10A 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC-Collector Current VBE(on) v IC Safe Operating Area MAX. 1000 IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 122 3 - 121