SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT493 ISSUE 3 - NOVEMBER 1995 TYPICAL CHARACTERISTICS 0. 4 0. 4 +25 ° C t) a IC/IB=10 IC/IB=50 0. 2 t) -55 ° C +25 ° C +100 ° C SYMBOL VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V V 0. 1 10A 10m A 1m A 240 +100 ° C 1A 10A VCE(sat) v IC IC/IB=10 1. 0 200 0. 8 16 0 +25 ° C - (V) - Typical Gain t) (s -55 ° C 80 -55 ° C +25 ° C +100 ° C a 120 0. 4 E h F B 10m A 100m A 1A 1m A 10A 10 mA hFE V IC V 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 120 V IC=100µA VCEO(sus) 100 V IC=10mA* I -Collector Current (A) 0.8 -55 ° C +25 °C 0.4 +100 °C n V(BR)EBO 5 V B V IE=100µA ICBO 100 nA VCB=100V Collector Cut-Off Current ICES 100 nA VCES=100V Emitter Cut-Off Current IEBO 100 nA VEB=4V Saturation Voltages VCE(sat) 0.3 0.6 V V IC=500mA, IB=50mA IC=1A, IB=100mA VBE(sat) 1.15 V IC=1A, IB=100mA Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=10V Static Forward Current Transfer Ratio hFE 100 100 60 20 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo 1 0. 1 0.0 1 C 0.2 0 DC 1s 100ms 10ms 1ms 100µs 0. 001 1m A 10m A 100 mA 1A 10 A IC -Collector Current VBE(on) v IC 0. 1 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area MAX. Collector Cut-Off Current 10 A 10 VCE=10V ) 1A VBE(sat) v IC 1. 0 0.6 10 0m A IC -Collector Current IC -Collector Current - (V) 5 0 1m A E VEBO IC 0. 2 40 0 o( Emitter-Base Voltage Continuous Collector Current ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0. 6 V E VCE=10V 10 0m A IC -Collector Current IC -Collector Current VCE(sat) v IC 280 SOT23 Collector-Base Voltage V 1A 100 IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 120 E C PARAMETER 0 10 0m A 493 C 0 10m A PARTMARKING DETAIL ABSOLUTE MAXIMUM RATINGS. 0. 2 E 1m A FMMT593 B ( E 0. 1 COMPLEMENTARY TYPE as s( C ✪ IC/IB=10 0. 3 -(V) -(V) 0. 3 FMMT493 3 - 119 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT493 ISSUE 3 - NOVEMBER 1995 TYPICAL CHARACTERISTICS 0. 4 0. 4 +25 ° C t) a IC/IB=10 IC/IB=50 0. 2 t) -55 ° C +25 ° C +100 ° C SYMBOL VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V V 0. 1 10A 10m A 1m A 240 +100 ° C 1A 10A VCE(sat) v IC IC/IB=10 1. 0 200 0. 8 16 0 +25 ° C - (V) - Typical Gain t) (s -55 ° C 80 -55 ° C +25 ° C +100 ° C a 120 0. 4 E h F B 10m A 100m A 1A 1m A 10A 10 mA hFE V IC V 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 120 V IC=100µA VCEO(sus) 100 V IC=10mA* I -Collector Current (A) 0.8 -55 ° C +25 °C 0.4 +100 °C n V(BR)EBO 5 V B V IE=100µA ICBO 100 nA VCB=100V Collector Cut-Off Current ICES 100 nA VCES=100V Emitter Cut-Off Current IEBO 100 nA VEB=4V Saturation Voltages VCE(sat) 0.3 0.6 V V IC=500mA, IB=50mA IC=1A, IB=100mA VBE(sat) 1.15 V IC=1A, IB=100mA Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=10V Static Forward Current Transfer Ratio hFE 100 100 60 20 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo 1 0. 1 0.0 1 C 0.2 0 DC 1s 100ms 10ms 1ms 100µs 0. 001 1m A 10m A 100 mA 1A 10 A IC -Collector Current VBE(on) v IC 0. 1 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area MAX. Collector Cut-Off Current 10 A 10 VCE=10V ) 1A VBE(sat) v IC 1. 0 0.6 10 0m A IC -Collector Current IC -Collector Current - (V) 5 0 1m A E VEBO IC 0. 2 40 0 o( Emitter-Base Voltage Continuous Collector Current ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0. 6 V E VCE=10V 10 0m A IC -Collector Current IC -Collector Current VCE(sat) v IC 280 SOT23 Collector-Base Voltage V 1A 100 IC=1mA, VCE=10V* IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 120 E C PARAMETER 0 10 0m A 493 C 0 10m A PARTMARKING DETAIL ABSOLUTE MAXIMUM RATINGS. 0. 2 E 1m A FMMT593 B ( E 0. 1 COMPLEMENTARY TYPE as s( C ✪ IC/IB=10 0. 3 -(V) -(V) 0. 3 FMMT493 3 - 119