SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT495 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL FMMT495 ✪ 495 TYPICAL CHARACTERISTICS 0.4 B 0.4 +25 ° C IC/IB=10 0.3 0.3 ABSOLUTE MAXIMUM RATINGS. -55 ° C +25 ° C +100 ° C IC/IB=10 IC/IB=50 0.2 0.2 0.1 0.1 0 0 1mA 10mA 1A 100mA 10A 1mA 10mA VCE(sat) v IC 1A 10A VCE(sat) v IC VCE=10V IC/IB=10 1.0 +100 ° C 240 100mA IC-Collector Current IC-Collector Current 320 +25 ° C PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 170 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 0.6 -55 °C +25 °C +100 °C 160 0.4 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 170 V IC=100µA VCEO(sus) 150 V IC=10mA* V(BR)EBO 5 -55 ° C 80 0.2 0 0 1mA 10mA 100mA 1A 1mA 10A 10mA 100mA 1A 10A hFE V IC VBE(sat) v IC 10 VCE=10V 0.8 1 0.6 0.1 -55 °C +25 °C +100 °C 0.4 0.01 0.2 0 DC 1s 100ms 10ms 1ms 100µs V IE=100µA ICBO 100 nA VCB=150V ICES 100 nA VCE=150V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.3 V V IC=250mA, IB=25mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=500mA, IB=50mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=500mA, VCE=10V* Static Forward Current Transfer Ratio hFE 100 100 50 10 Transition Frequency fT 100 Collector-Base Breakdown Voltage Cobo 0.001 1mA 10mA 100mA 1A 10A 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC-Collector Current VBE(on) v IC Safe Operating Area 1000 MAX. Collector Cut-Off Currents IC-Collector Current IC-Collector Current 1.0 E C IC=1mA, VCE=10V IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 124 3 - 123 SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT495 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL FMMT495 ✪ 495 TYPICAL CHARACTERISTICS 0.4 B 0.4 +25 ° C IC/IB=10 0.3 0.3 ABSOLUTE MAXIMUM RATINGS. -55 ° C +25 ° C +100 ° C IC/IB=10 IC/IB=50 0.2 0.2 0.1 0.1 0 0 1mA 10mA 1A 100mA 10A 1mA 10mA VCE(sat) v IC 1A 10A VCE(sat) v IC VCE=10V IC/IB=10 1.0 +100 ° C 240 100mA IC-Collector Current IC-Collector Current 320 +25 ° C PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 170 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM 2 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 0.6 -55 °C +25 °C +100 °C 160 0.4 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 170 V IC=100µA VCEO(sus) 150 V IC=10mA* V(BR)EBO 5 -55 ° C 80 0.2 0 0 1mA 10mA 100mA 1A 1mA 10A 10mA 100mA 1A 10A hFE V IC VBE(sat) v IC 10 VCE=10V 0.8 1 0.6 0.1 -55 °C +25 °C +100 °C 0.4 0.01 0.2 0 DC 1s 100ms 10ms 1ms 100µs V IE=100µA ICBO 100 nA VCB=150V ICES 100 nA VCE=150V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.3 V V IC=250mA, IB=25mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=500mA, IB=50mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=500mA, VCE=10V* Static Forward Current Transfer Ratio hFE 100 100 50 10 Transition Frequency fT 100 Collector-Base Breakdown Voltage Cobo 0.001 1mA 10mA 100mA 1A 10A 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC-Collector Current VBE(on) v IC Safe Operating Area 1000 MAX. Collector Cut-Off Currents IC-Collector Current IC-Collector Current 1.0 E C IC=1mA, VCE=10V IC=250mA, VCE=10V* IC=500mA, VCE=10V* IC=1A, VCE=10V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 124 3 - 123