ONSEMI MBRS410ET3

MBRS410ET3
Preferred Device
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other
application where performance and size are critical.
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Very Low VF Accompanied by Low IR
1st in the Market Place with a 10 VR Schottky Rectifier
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Designed for Low Leakage
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
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SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES
10 VOLTS
SMC
CASE 403
PLASTIC
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 217 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
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Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Marking: B4E1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
10
V
Average Rectified Forward Current
(@ TL = 130°C)
IO
4.0
A
IFSM
250
A
TJ
–65 to
+150
°C
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
 Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
MARKING DIAGRAM
YWW
B4E1
Y
= Year
WW = Work Week
B4E1= Device Code
ORDERING INFORMATION
Device
Package
Shipping
MBRS410ET3
SMC
2500/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRS410ET3/D
MBRS410ET3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction–to–Lead
Thermal Resistance – Junction–to–Ambient
Symbol
5 mm x 5 mm
(Note 2)
1 Inch x 1/2 inch
Unit
RθJL
RθJA
12
109
7.0
59
°C/W
VF
TJ = 25°C
TJ = 100°C
V
0.475
0.500
0.525
0.370
0.395
0.430
TJ = 25°C
TJ = 100°C
50
150
2000
4000
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 2.0 A)
(IF = 4.0 A)
(IF = 8.0 A)
Maximum Instantaneous Reverse Current (Note 1)
IR
(Rated dc Voltage, VR = 5.0 V)
(Rated dc Voltage, VR = 10 V)
A
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
100
25°C
VF @ 125°C
IF, MAXIMUM INSTANTANEOUS
FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
100
–40°C
100°C
10
75°C
1
VF @ 125°C
25°C
100°C
10
75°C
1
0.1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E–02
IR, REVERSE CURRENT (AMPS)
10,000
IR @ 125°C
100°C
1.0E–04
75°C
1.0E–05
25°C
1.0E–06
1.0E–07
25°C
f = 1 MHz
C, CAPACITANCE (pF)
1.0E–03
1000
0
2
4
6
8
10
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
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2
10
PFO, AVERAGE POWER DISSIPATION (WATTS)
MBRS410ET3
9
IF, AVERAGE FORWARD
CURRENT (AMPS)
8
RATED VOLTAGE
APPLIED
RJL = 12 °C/W
TJ = 125°C
dc
7
6
5
SQUARE WAVE
4
3
2
1
0
100
110
120
130
140
150
160
TL, LEAD TEMPERATURE (°C)
3.5
dc
3
TJ = 125°C
2.5
2
SQUARE WAVE
1.5
1
0.5
0
0
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 5. Current Derating – Junction to Lead
1
2
3
4
5
6
7
8
9
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 7. Thermal Response, Junction to Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 8. Thermal Response, Junction to Ambient (1 inch pad)
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3
MBRS410ET3
PACKAGE DIMENSIONS
SMC
PLASTIC PACKAGE
CASE 403–03
ISSUE B
S
A
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
B
C
K
P
J
INCHES
DIM MIN
MAX
A
0.260
0.280
B
0.220
0.240
C
0.075
0.095
D
0.115
0.121
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.305
0.320
MILLIMETERS
MIN
MAX
6.60
7.11
5.59
6.10
1.90
2.41
2.92
3.07
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
7.75
8.13
H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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MBRS410ET3/D