FGH75N60SF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Induction Heating, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC TL V 150 A A @ TC = 25 C @ TC = 25oC 452 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds ± 20 A o Storage Temperature Range V 75 Maximum Power Dissipation Tstg Units 600 225 o Pulsed Collector Current @ TC = 100 C 181 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.276 o C/W RθJA Thermal Resistance, Junction to Ambient - 40 o C/W ©2008 Fairchild Semiconductor Corporation FGH75N60SF Rev. A 1 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT December 2008 Device Marking Device Package Packaging Type FGH75N60SF FGH75N60SFTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.4 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 75A, VGE = 15V - 2.3 2.9 V IC = 75A, VGE = 15V, TC = 125oC - 2.6 - V - 3850 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 375 - pF - 147 - pF Switching Characteristics td(on) Turn-On Delay Time - 26 - ns tr Rise Time - 58 - ns td(off) Turn-Off Delay Time - 138 - ns tf Fall Time - 22 60 ns Eon Turn-On Switching Loss - 2.7 - mJ Eoff Turn-Off Switching Loss - 1.0 - mJ Ets Total Switching Loss - 3.7 - mJ td(on) Turn-On Delay Time - 25 - ns tr Rise Time - 62 - ns td(off) Turn-Off Delay Time - 138 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.3 - mJ Ets Total Switching Loss - 4.5 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGH75N60SF Rev. A VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 75A, VGE = 15V 2 - 21 - ns - 3.2 - mJ - 250 - nC - 30 - nC - 130 - nC www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 225 225 o TC = 25 C 200 12V 150 10V 125 100 75 VGE = 8V 50 10V 150 125 100 75 VGE = 8V 50 25 0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 225 225 200 Common Emitter VGE = 15V 175 TC = 25 C o TC = 125 C 150 200 Common Emitter VCE = 20V 175 TC = 25 C o o Collector Current, IC [A] Collector Current, IC [A] 12V 175 25 125 100 75 50 o TC = 125 C 150 125 100 25 75 50 25 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Common Emitter 150A 3.0 75A 2.5 IC = 40A 2.0 1.5 25 12 20 Common Emitter VGE = 15V 3.5 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 15V 20V 200 15V 175 o TC = 125 C 20V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics o TC = -40 C 16 12 8 150A 4 75A IC = 40A 0 50 75 100 125 o Collector-Emitter Case Temperature, TC [ C] FGH75N60SF Rev. A 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 150A 4 75A IC = 40A 0 0 16 12 8 150A 4 75A IC = 40A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 15 Common Emitter VGE = 0V, f = 1MHz Cies Common Emitter o Gate-Emitter Voltage, VGE [V] 6000 o TC = 25 C 5000 4000 3000 Coes 2000 1000 Cres 0 1 TC = 25 C VCC = 100V 12 200V 300V 9 6 3 0 10 Collector-Emitter Voltage, VCE [V] 30 0 Figure 11. SOA Characteristics 50 100 150 200 Gate Charge, Qg [nC] 250 Figure 12. Load Current vs. Frequency 500 140 VCC = 400V 10µs load Current : peak of square wave 100 120 Load Current [A] Collector Current, Ic [A] 20 Figure 10. Gate charge Characteristics 7000 Capacitance [pF] TC = 125 C 100µs 10 1ms 10 ms 1 DC 80 60 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 100 Duty cycle : 50% 40 o T = 100 C C Powe Dissipation = 181W 20 0.01 1 FGH75N60SF Rev. A 10 100 Collector-Emitter Voltage, VCE [V] 1 1000 4 10 100 Frequency [kHz] 1000 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 6000 200 100 o Switching Time [ns] tr Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 75A td(on) Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C 1000 o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 10 0 10 20 30 40 Gate Resistance, RG [Ω ] 0 50 Figure 15. Turn-on Characteristics vs. Collector Current 10 20 30 Gate Resistance, RG [Ω ] 40 50 Figure 16. Turn-off Characteristics vs. Collector Current 200 200 Common Emitter VGE = 15V, RG = 3Ω td(off) o TC = 25 C TC = 125 C Switching Time [ns] 100 tr o Switching Time [ns] 100 td(on) tf Common Emitter VGE = 15V, RG = 3Ω o TC = 25 C o TC = 125 C 10 20 40 60 80 100 120 140 10 20 160 40 60 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance 30 Common Emitter VCC = 400V, VGE = 15V 10 IC = 75A o o Switching Loss [mJ] Switching Loss [mJ] TC = 25 C TC = 125 C Eon Eoff 1 0 FGH75N60SF Rev. A 10 20 30 40 Gate Resistance, RG [Ω] 100 120 140 160 Figure 18. Switching Loss vs. Collector Current 15 10 80 Collector Current, IC [A] 5 o TC = 25 C o Eon TC = 125 C Eoff 1 0.1 20 50 Common Emitter VGE = 15V, RG = 3Ω 40 60 80 100 120 Collector Current, IC [A] 140 160 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics FGH75N60SF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 19. Turn off Switching SOA Characteristics 300 Collector Current, IC [A] 100 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 20.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.1 0.5 0.2 0.1 0.05 PDM 0.01 0.02 0.01 t1 t2 single pulse 1E-3 1E-5 1E-4 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGH75N60SF Rev. A 6 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH75N60SF Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FGH75N60SF Rev. A 8 www.fairchildsemi.com FGH75N60SF 600V, 75A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.