FGB40N60SM tm 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop 2nd generation IGBTs offer the optimum performance for welding and PFC applications where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant • IR Reflow Only Applications • Welding, PFC C COLLECTOR (FLANGE) G TO-263AB/D2-PAK G C E E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) PD TJ 25oC Collector Current @ TC = 80 A Collector Current @ TC = 100oC 40 A 120 A Maximum Power Dissipation @ TC = 25oC 349 W Maximum Power Dissipation @ TC = 100oC Pulsed Collector Current Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 174 W -55 to +175 o -55 to +175 oC 300 C o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGB40N60SM Rev. A 1 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT November 2011 Symbol RθJC(IGBT) Parameter Typ. Max. - 0.43 o C/W 62.5 o C/W Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient - Units Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGB40N60SM FGB40N60SM TO-263AB/D2-PAK - - 50 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA 3.5 4.5 6.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE IC = 40A, VGE = 15V - 1.9 2.3 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, TC = 175oC - 2.1 - V - 1880 - pF - 180 - pF - 50 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 12 16 ns tr Rise Time - 20 28 ns td(off) Turn-Off Delay Time - 92 120 ns tf Fall Time - 13 17 ns Eon Turn-On Switching Loss - 0.87 1.30 mJ Eoff Turn-Off Switching Loss - 0.26 0.34 mJ VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 25oC Ets Total Switching Loss - 1.13 1.64 mJ td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 116 - ns tf Fall Time - 16 - ns Eon Turn-On Switching Loss - 0.97 - mJ Eoff Turn-Off Switching Loss - 0.60 - mJ Ets Total Switching Loss - 1.57 - mJ FGB40N60SM Rev. A VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGB40N60SM Rev. A VCE = 400V, IC = 40A, VGE = 15V 3 Min. Typ. Max Units - 119 180 nC - 13 20 nC - 58 90 nC www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 o TC = 25 C 20V 15V 120 12V o TC = 175 C 100 10V 80 60 VGE = 8V 40 12V 10V 80 60 VGE = 8V 40 20 20 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 120 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o o TC = 25 C o TC = 175 C 80 TC = 25 C Collector Current, IC [A] 100 Collector Current, IC [A] 20V 15V 100 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 60 40 90 T = 175oC C 60 30 20 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Common Emitter VGE = 15V 80A 2.0 40A 1.5 IC = 20A 1.0 25 4 12 Common Emitter o TC = -40 C 16 12 8 40A 80A 4 IC = 20A 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGB40N60SM Rev. A 4 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 3.0 2.5 2 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 80A 4 IC = 20A 0 o TC = 175 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0 0.1 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 40 80 Gate Charge, Qg [nC] Figure 12. Turn-on Characteristics vs. Gate Resistance 100 300 10µs 100 tr 100µs 1ms Switching Time [ns] Collector Current, Ic [A] 120 10 ms 10 DC 1 *Notes: 0.1 td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A o o 1. TC = 25 C TC = 25 C o o 2. TJ = 175 C 3. Single Pulse 0.01 1 FGB40N60SM Rev. A 10 100 Collector-Emitter Voltage, VCE [V] TC = 175 C 1 0 1000 5 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6Ω o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) TC = 175 C 100 tr 10 td(on) o TC = 25 C o TC = 175 C 1 0 10 20 30 40 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 5 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6Ω o Eon 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C TC = 25 C o o TC = 175 C 1 20 30 40 50 60 TC = 175 C 70 0.1 80 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 200 6 Collector Current, IC [A] Switching Loss [mJ] 100 Eon 1 Eoff Common Emitter VGE = 15V, RG = 6Ω o TC = 25 C 10 Safe Operating Area o o TC = 175 C 0.1 20 30 40 50 60 70 VGE = 15V, TC = 175 C 1 80 1 Collector Current, IC [A] FGB40N60SM Rev. A 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequency 90 o TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 6Ω 100 70 60 50 40 30 20 90 80 70 o Tc = 75 C 60 o Tc = 100 C 50 40 30 20 10 0 25 Square Wave 110 Collector Current, IC [A] Collector Current, IC [A] 120 Common Emitter VGE = 15V 80 10 0 1k 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] 10k 100k Switching Frequency, f [Hz] 1M Figure 21.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] FGB40N60SM Rev. A 7 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT Typical Performance Characteristics FGB40N60SM 600V, 40A Field Stop IGBT Mechanical Dimensions TO-263AB/D2-PAK FGB40N60SM Rev. A 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FGB40N60SM Rev. A 9 www.fairchildsemi.com FGB40N60SM 600V, 40A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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