FAIRCHILD FGH40N60SFDTU

FGH40N60SFD
600 V, 40 A Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild®’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS
C
E
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
TL
V
80
A
A
@ TC = 25 C
@ TC = 25oC
290
W
Maximum Power Dissipation
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
 20
A
o
Storage Temperature Range
V
40
Maximum Power Dissipation
Tstg
Unit
600
120
o
Pulsed Collector Current
@ TC = 100 C
116
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
o
C/W
RJC(Diode)
Thermal Resistance, Junction to Case
-
1.45
o
C/W
RJA
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
-
1
40
oC/W
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
April 2013
Device Marking
Device
Package
Packaging
Type
FGH40N60SFD
FGH40N60SFDTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250A, VCE = VGE
4.0
5.0
6.5
V
IC = 40A, VGE = 15V
-
2.3
2.9
V
IC = 40A, VGE = 15V,
TC = 125oC
-
2.5
-
V
-
2110
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
200
-
pF
-
60
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
25
-
ns
tr
Rise Time
-
42
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
-
115
-
ns
-
27
54
ns
-
1.13
-
mJ
-
0.31
-
mJ
Ets
Total Switching Loss
-
1.44
-
mJ
td(on)
Turn-On Delay Time
-
24
-
ns
tr
Rise Time
-
43
-
ns
td(off)
Turn-Off Delay Time
-
120
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.48
-
mJ
Ets
Total Switching Loss
-
1.62
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
2
-
30
-
ns
-
1.14
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 20A
IES =20A, dIES/dt = 200A/s
Qrr
Diode Reverse Recovery Charge
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
Min.
Typ.
Max
TC = 25oC
-
1.95
2.6
TC = 125oC
-
1.85
-
TC = 25oC
-
45
-
-
140
-
TC = 25oC
-
75
-
o
-
375
-
TC =
125oC
TC = 125 C
3
Unit
V
ns
nC
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
120
Figure 2. Typical Output Characteristics
120
o
o
TC = 25 C
15V
80
20V
15V
100
Collector Current, IC [A]
100
Collector Current, IC [A]
TC = 125 C
20V
12V
60
40
10V
80
60
10V
40
20
20
VGE = 8V
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
6.0
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
Collector Current, IC [A]
o
Collector Current, IC [A]
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
80
TC = 25 C
60
o
TC = 125 C
40
20
TC = 25 C
o
TC = 125 C
80
40
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
6
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
3.5
80A
3.0
2.5
40A
2.0
IC = 20A
1.5
1.0
25
FGH40N60SFD Rev.C0
13
4
Common Emitter
o
TC = -40 C
16
12
8
40A
4
80A
IC = 20A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
8
10
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
4.0
Collector-Emitter Voltage, VCE [V]
12V
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
40A
80A
4
IC = 20A
0
TC = 125 C
16
12
8
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
20
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Ciss
o
Gate-Emitter Voltage, VGE [V]
4000
Capacitance [pF]
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
5000
o
TC = 25 C
3000
Coss
2000
1000
Crss
0
0.1
TC = 25 C
12
Vcc = 100V
200V
300V
9
6
3
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
Gate Charge, Qg [nC]
150
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
200
100
10s
100
Switching Time [ns]
Collector Current, Ic [A]
80A
4
100s
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 125 C
0.01
10
1
10
100
Collector-Emitter Voltage, VCE [V]
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
1000
0
5
10
20
30
40
Gate Resistance, RG []
50
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
5500
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
o
1000
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 125 C
td(off)
100
tf
TC = 125 C
td(on)
10
20
10
0
10
20
30
40
50
40
Gate Resistance, RG []
80
Figure 16. Switching Loss vs. Gate Resistance
10
500
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
o
IC = 40A
TC = 25 C
o
o
TC = 125 C
TC = 25 C
Switching Loss [mJ]
Switching Time [ns]
60
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
td(off)
100
tf
o
TC = 125 C
1
Eoff
40
60
0
80
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
10
20
30
40
Gate Resistance, RG []
50
Figure 18. Turn off Switching
SOA Characteristics
30
200
Common Emitter
VGE = 15V, RG = 10
100
o
TC = 25 C
Eon
o
TC = 125 C
Collector Current, IC [A]
10
Eon
0.2
0.3
10
20
Switching Loss [mJ]
tr
100
Eoff
1
10
Safe Operating Area
0.1
o
VGE = 15V, TC = 125 C
1
20
30
40
50
60
70
1
80
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
6
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Current vs.
Reverse Voltage
80
200
100
Reverse Current , IR [A]
Forward Current, IF [A]
o
o
TJ = 125 C
10
o
TJ = 25 C
o
TJ = 75 C
o
1
TC = 25 C
TJ = 125 C
10
o
TJ = 75 C
1
0.1
o
o
TJ = 25 C
TC = 75 C
o
TC = 125 C
0.2
0
1
2
3
Forward Voltage, VF [V]
0.01
50
4
Figure 21. Stored Charge
600
Figure 22. Reverse Recovery Time
60
Reverse Recovery Time, trr [ns]
100
Stored Recovery Charge, Qrr [nC]
200
400
Reverse Voltage, VR [V]
200A/s
80
60
di/dt = 100A/s
40
50
di/dt = 100A/s
200A/s
40
30
20
5
10
20
30
Forward Current, IF [A]
5
40
10
20
30
Forward Current, IF [A]
40
Figure 23.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
7
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics
FGH40N60SFD 600 V, 40 A Field Stop IGBT
Mechanical Dimensions
TO-247A03
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C0
9
www.fairchildsemi.com
FGH40N60SFD 600 V, 40 A Field Stop IGBT
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