FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC TL V 80 A A @ TC = 25 C @ TC = 25oC 290 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 20 A o Storage Temperature Range V 40 Maximum Power Dissipation Tstg Unit 600 120 o Pulsed Collector Current @ TC = 100 C 116 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction to Case - 0.43 o C/W RJC(Diode) Thermal Resistance, Junction to Case - 1.45 o C/W RJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 - 1 40 oC/W www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT April 2013 Device Marking Device Package Packaging Type FGH40N60SFD FGH40N60SFDTU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250A - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250A, VCE = VGE 4.0 5.0 6.5 V IC = 40A, VGE = 15V - 2.3 2.9 V IC = 40A, VGE = 15V, TC = 125oC - 2.5 - V - 2110 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 200 - pF - 60 - pF Switching Characteristics td(on) Turn-On Delay Time - 25 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC - 115 - ns - 27 54 ns - 1.13 - mJ - 0.31 - mJ Ets Total Switching Loss - 1.44 - mJ td(on) Turn-On Delay Time - 24 - ns tr Rise Time - 43 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.48 - mJ Ets Total Switching Loss - 1.62 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 40A, VGE = 15V 2 - 30 - ns - 1.14 - mJ - 120 - nC - 14 - nC - 58 - nC www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 20A IES =20A, dIES/dt = 200A/s Qrr Diode Reverse Recovery Charge ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 Min. Typ. Max TC = 25oC - 1.95 2.6 TC = 125oC - 1.85 - TC = 25oC - 45 - - 140 - TC = 25oC - 75 - o - 375 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o o TC = 25 C 15V 80 20V 15V 100 Collector Current, IC [A] 100 Collector Current, IC [A] TC = 125 C 20V 12V 60 40 10V 80 60 10V 40 20 20 VGE = 8V VGE = 8V 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 6.0 120 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] o Collector Current, IC [A] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 80 TC = 25 C 60 o TC = 125 C 40 20 TC = 25 C o TC = 125 C 80 40 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 6 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 3.5 80A 3.0 2.5 40A 2.0 IC = 20A 1.5 1.0 25 FGH40N60SFD Rev.C0 13 4 Common Emitter o TC = -40 C 16 12 8 40A 4 80A IC = 20A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2008 Fairchild Semiconductor Corporation 8 10 12 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 12V 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 40A 80A 4 IC = 20A 0 TC = 125 C 16 12 8 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 20 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz Ciss o Gate-Emitter Voltage, VGE [V] 4000 Capacitance [pF] 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 5000 o TC = 25 C 3000 Coss 2000 1000 Crss 0 0.1 TC = 25 C 12 Vcc = 100V 200V 300V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 Gate Charge, Qg [nC] 150 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100 10s 100 Switching Time [ns] Collector Current, Ic [A] 80A 4 100s 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 125 C 0.01 10 1 10 100 Collector-Emitter Voltage, VCE [V] ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 1000 0 5 10 20 30 40 Gate Resistance, RG [] 50 www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 500 5500 Common Emitter VGE = 15V, RG = 10 o TC = 25 C o 1000 o TC = 25 C Switching Time [ns] Switching Time [ns] Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 125 C td(off) 100 tf TC = 125 C td(on) 10 20 10 0 10 20 30 40 50 40 Gate Resistance, RG [] 80 Figure 16. Switching Loss vs. Gate Resistance 10 500 Common Emitter VGE = 15V, RG = 10 Common Emitter VCC = 400V, VGE = 15V o IC = 40A TC = 25 C o o TC = 125 C TC = 25 C Switching Loss [mJ] Switching Time [ns] 60 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current td(off) 100 tf o TC = 125 C 1 Eoff 40 60 0 80 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [] 50 Figure 18. Turn off Switching SOA Characteristics 30 200 Common Emitter VGE = 15V, RG = 10 100 o TC = 25 C Eon o TC = 125 C Collector Current, IC [A] 10 Eon 0.2 0.3 10 20 Switching Loss [mJ] tr 100 Eoff 1 10 Safe Operating Area 0.1 o VGE = 15V, TC = 125 C 1 20 30 40 50 60 70 1 80 ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs. Reverse Voltage 80 200 100 Reverse Current , IR [A] Forward Current, IF [A] o o TJ = 125 C 10 o TJ = 25 C o TJ = 75 C o 1 TC = 25 C TJ = 125 C 10 o TJ = 75 C 1 0.1 o o TJ = 25 C TC = 75 C o TC = 125 C 0.2 0 1 2 3 Forward Voltage, VF [V] 0.01 50 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 60 Reverse Recovery Time, trr [ns] 100 Stored Recovery Charge, Qrr [nC] 200 400 Reverse Voltage, VR [V] 200A/s 80 60 di/dt = 100A/s 40 50 di/dt = 100A/s 200A/s 40 30 20 5 10 20 30 Forward Current, IF [A] 5 40 10 20 30 Forward Current, IF [A] 40 Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 7 www.fairchildsemi.com FGH40N60SFD 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N60SFD 600 V, 40 A Field Stop IGBT Mechanical Dimensions TO-247A03 ©2008 Fairchild Semiconductor Corporation FGH40N60SFD Rev.C0 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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