FGA60N60UFD tm 600V, 60A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. • Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating, UPS, SMPS, PFC C G TO-3P E G C E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current o @ TC = 100 C TL V 120 A A @ TC = 25 C @ TC = 25oC 298 W Maximum Power Dissipation Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds ± 20 A o Storage Temperature Range V 60 Maximum Power Dissipation Tstg Units 600 180 o Pulsed Collector Current @ TC = 100 C 119 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.33 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.1 o C/W 40 oC/W RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FGA60N60UFD Rev. A - 1 www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT February 2009 Device Marking Device Package Packaging Type FGA60N60UFD FGA60N60UFDTU TO-3PN Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.67 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE 4.0 5.0 6.5 V IC = 60A, VGE = 15V - 1.9 2.4 V IC = 60A, VGE = 15V, TC = 125oC - 2.1 - V - 2855 - pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 325 - pF - 110 - pF Switching Characteristics td(on) Turn-On Delay Time - 23 - ns tr Rise Time - 58 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets td(on) tr Rise Time - 61 - ns td(off) Turn-Off Delay Time - 141 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.23 - mJ Ets Total Switching Loss - 3.15 - mJ - 130 - ns - 40 80 ns - 1.81 - mJ - 0.81 - mJ Total Switching Loss - 2.62 - mJ Turn-On Delay Time - 22 - ns Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGA60N60UFD Rev. A VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 60A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125oC VCE = 400V, IC = 60A, VGE = 15V 2 - 63 - ns - 1.92 - mJ - 188 - nC - 21 - nC - 97 - nC www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 30A IES = 30A, dIES/dt = 200A/µs Qrr Diode Reverse Recovery Charge FGA60N60UFD Rev. A Min. Typ. Max TC = 25oC - 2.0 2.6 TC = 125oC - 1.8 - TC = 25oC - 47 - - 179 - TC = 25oC - 83 - o - 567 - TC = 125oC TC = 125 C 3 Units V ns nC www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 180 180 o o TC = 125 C TC = 25 C 20V 150 15V 150 120 Collector Current, IC [A] Collector Current, IC [A] 12V 10V 90 60 VGE = 8V 30 12V 90 60 VGE = 8V 30 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 o TC = 25 C o TC = 125 C 120 Common Emitter VCE = 20V 150 Collector Current, IC [A] Collector Current, IC [A] 10V 120 0 90 60 o TC = 25 C o TC = 125 C 120 90 60 30 30 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 3.0 120A 2.5 2.0 60A 1.5 IC = 30A 1.0 25 5 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 3.5 1 2 3 4 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4.0 Collector-Emitter Voltage, VCE [V] 15V 20V 16 12 8 120A 4 60A IC = 30A 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] FGA60N60UFD Rev. A o TC = -40 C 4 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] 18 www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 20 Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Common Emitter 16 12 8 60A 120A 4 IC = 30A 0 0 3 6 9 12 15 Gate-Emitter Voltage, VGE [V] o TC = 125 C 16 12 8 120A 4 IC = 30A 0 18 Figure 9. Capacitance Characteristics 60A 0 18 15 Common Emitter VGE = 0V, f = 1MHz Common Emitter Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 6 9 12 15 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 6000 Cies 4000 Coes 2000 Cres 0 1 TC = 25 C 12 300V VCC = 100V 200V 9 6 3 0 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn off Switching SOA Characteristics 300 500 10µs 100 100 100µs 10 Collector Current, IC [A] Collector Current, Ic [A] 3 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] FGA60N60UFD Rev. A 1 1000 10 100 1000 Collector-Emitter Voltage, VCE [V] 5 www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Switching Time [ns] Switching Time [ns] o 100 tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) TC = 25 C 1000 o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 0 10 20 30 40 Gate Resistance, RG [Ω] 10 50 0 20 30 40 50 Gate Resistance, RG [Ω] Figure 15. Turn-on Characteristics vs Collector Current Figure 16. Turn-off Characteristics vs. Collector Current 500 1000 Common Emitter VGE = 15V, RG = 5Ω Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C TC = 25 C o o tr TC = 125 C Switching Time [ns] Switching Time [ns] 10 100 TC = 125 C td(off) 100 td(on) tf 10 30 0 20 40 60 80 100 120 0 20 40 Collector Current, IC [A] 60 80 100 120 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current 20 20 Common Emitter VCC = 400V, VGE = 15V 10 o IC = 60A TC = 25 C o o Switching Loss [mJ] TC = 25 C Switching Loss [mJ] Common Emitter VGE = 15V, RG = 5Ω 10 o TC = 125 C Eon 1 Eon TC = 125 C Eoff 1 Eoff 0.1 0 10 FGA60N60UFD Rev. A 20 30 40 Gate Resistance, RG [Ω] 0 50 20 40 60 80 100 120 Collector Current, IC [A] 6 www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 500 100 100 o Reverse Current , IR [µA] Forward Current, IF [A] TC = 125 C o TJ = 125 C o TJ = 25 C 10 o TJ = 75 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 125 C 0.01 1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 60 100 Reverse Recovery Time, trr [ns] 500 o TC = 125 C Reverse Current , IR [µA] 200 400 Reverse Voltage, VR [V] 10 o TC = 75 C 1 0.1 o TC = 25 C 200A/µs 50 di/dt = 100A/µs 40 30 0.01 0 200 400 Reverse Voltage, VR [V] 5 600 20 40 60 Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGA60N60UFD Rev. A 7 www.fairchildsemi.com FGA60N60UFD 600V, 60A Field Stop IGBT Typical Performance Characteristics FGA60N60UFD 600V, 60A Field Stop IGBT Mechanical Dimensions TO-3PN FGA60N60UFD Rev. A 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I39 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com