NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters Power Management V(BR)DSS RDS(on) TYP ID MAX −60 V 145 m @ −10 V −2.6 A P−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V ID −2.6 A Parameter Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C G S −2.0 4 Power Dissipation (Note 1) Steady State TA = 25°C PD W 2.3 1 2 MARKING DIAGRAM SOT−223 CASE 318E STYLE 3 2955 LWW 3 Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) TA = 25°C ID TA = 85°C TA = 25°C A −1.7 −1.3 PD 1.0 W IDM −10.4 A Operating Junction and Storage Temperature TJ, TSTG −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A, L = 10 mH, RG = 25 ) EAS 225 mJ TL 260 °C Pulsed Drain Current tp = 10 s Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 2955 L WW = Device Code = Location Code = Work Week PIN ASSIGNMENT 4 Drain 1 Gate 2 Drain 3 Source THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Tab (Drain) − Steady State (Note 2) RJC 14 °C/W Junction−to−Ambient − Steady State (Note 1) RJA Junction−to−Ambient − Steady State (Note 2) RJA Device Package Shipping† 65 NTF2955T1 SOT−223 1000/Tape & Reel 150 NTF2955T3 SOT−223 4000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127 in2 [1 oz] including traces) 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu. area = 0.341 in2) Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 1 ORDERING INFORMATION 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTF2955/D NTF2955 ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 A −60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS V 66.4 VGS = 0 V, VDS = −60 60 V mV/°C TJ = 25°C −1.0 TJ = 125°C −50 IGSS VDS = 0 V, VGS = ±20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −1.0 mA Drain−to−Source On Resistance RDS(on) ( ) VGS = −10 V, ID = −0.75 A A ±100 nA −4.0 V 145 170 mΩ VGS = −10 V, ID = −1.5 A 150 180 VGS = −10 V, ID = −2.4 A 154 185 gFS VGS = −15 V, ID = −0.75 A 1.77 S Input Capacitance CISS 492 pF Output Capacitance COSS VGS = 0 V, f = 1.0 MHz, VDS = 25 V Reverse Transfer Capacitance CRSS Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Forward Transconductance −2.0 CHARGES AND CAPACITANCES 165 50 VGS = 10 V, VDS = 30 V, ID = 1 1.5 5A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 2.3 Gate−to−Drain Charge QGD 5.2 nC 14.3 1.2 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 10 V, VDD = 25 V, ID = 1 1.5 5 A, A RG = 9 9.1 1Ω RL = 25 Ω ns 11 7.6 td(OFF) 65 tf 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C −1.10 TJ = 125°C −0.9 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 1 1.5 5A −1.30 V 36 VGS = 0 V, dIS/dt = 100 A/s, IS = 1.5 A QRR 20 16 0.139 3. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTF2955 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 VGS = −6 V VGS = −10 V to −7 V 8 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 10 TJ = 25 °C VGS = −5.5 V 6 VGS = −5 V 4 VGS = −4.5 V 2 VDS ≥ 10 V TJ = −55°C TJ = 25°C 8 TJ = 125°C 6 4 2 VGS = −3.8 V 0 0 0 1 2 3 4 5 6 7 8 9 10 2 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 8 10 0.4 VGS = −10 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) Figure 2. Transfer Characteristics 0.25 TJ = 25°C 0.225 0.3 TJ = 125°C 0.2 0.175 0.2 TJ = 25°C VGS = −10 V 0.15 VGS = −15 V 0.125 TJ = −55°C 0.1 0.075 0 2 0 4 8 6 10 0 6 4 2 8 10 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 2 1.8 0.05 −ID, DRAIN CURRENT (AMPS) ID = −1.5 A VGS = −10 V VGS = 0 V TJ = 150°C 1.6 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) Figure 1. On−Region Characteristics 0.1 6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.4 1.2 1 0.8 0.6 0.4 100 TJ = 125°C 0.2 0 −50 10 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 60 NTF2955 Ciss C, CAPACITANCE (pF) 1000 QT 10 800 Crss 600 Ciss 400 Coss 200 Crss 0 10 60 12 TJ = 25°C VGS = 0 V VDS = 0 V 5 0 −VGS 5 10 15 20 25 8 QGS 30 20 4 VDS 2 0 16 0 0 2 −VDS 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) 14 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 5 1000 −IS, SOURCE CURRENT (AMPS) VDD = −25 V ID = −1.5 A VGS = −10 V t, TIME (ns) 10 ID = −1.5 A TJ = 25°C Figure 7. Capacitance Variation 100 td(off) tf td(on) 10 tr 1 10 3 2 1 0 0.25 0.5 0.75 1 1.25 1.5 1.75 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current VGS = −20 V SINGLE PULSE TC = 25°C 10 µs 100 µs 1 ms 10 ms 1 dc 0.01 0.1 4 RG, GATE RESISTANCE (Ω) 10 0.1 VGS = 0 V TJ = 25°C 0 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 100 −ID, DRAIN CURRENT (AMPS) 40 VGS QGD 6 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 50 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1200 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 250 IPK = −6.7 A 200 150 100 50 0 25 50 75 100 125 150 175 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTF2955 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A F 4 S 1 2 B 3 D L G J C 0.08 (0003) M H K SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 2.0 0.079 1.5 0.059 http://onsemi.com 5 6.3 0.248 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NTF2955 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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