MJD5731 Preferred Device High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • 350 V (Min) - VCEO(sus) • 1.0 A Rated Collector Current • PNP Complements to the MJD47 thru MJD50 Series ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Peak Symbol MJD5731 Unit VCEO 350 Vdc VEB 5 Vdc IC 1.0 3.0 Adc 15 0.12 Watts W/°C 1.56 0.0125 Watts W/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (1) @ TA = 25°C Derate above 25°C PD Unclamped Inductive Load Energy (See Figure ) E 20 mJ TJ, Tstg - 55 to 150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RJC 8.33 °C/W Thermal Resistance, Junction-to-Ambient (Note 1) RJA 80 °C/W TL 260 °C Lead Temperature for Soldering http://onsemi.com SILICON POWER TRANSISTORS 1.0 A, 350 V 15 W MARKING DIAGRAM J5731 DPAK CASE 369 J5731 DPAK CASE 369A Style 1 xx A WL, L YY, Y WW, W 1. These ratings are applicable when surface mounted on the minimum pad size recommended. = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping MJD5731T4 DPAK 2500/ Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 0 1 Publication Order Number: MJD5731/D 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 MJD5731 inches mm MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 350 Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) Vdc - Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (VCE = 250 Vdc, IB = 0) (VCE = 350 Vdc, VBE = 0) (VBE = 5.0 Vdc, IC = 0) ICEO mAdc - 0.1 - 0.01 - 0.5 mAdc 30 10 175 - - ICES IEBO mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) - 1.0 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) - 1.5 Vdc Current Gain - Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 - MHz Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 - - DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MJD5731 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 200 VCE = 10 V 100 TJ = 150°C 50 25°C 30 −55 °C 20 10 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 1.4 1.2 1 0.6 V, VOLTAGE (V) V, VOLTAGE (VOLTS) 1.2 TJ = − 55°C 0.8 25°C 150°C 0.8 0.6 0.4 0.2 0.2 0.1 0.2 0.3 0.5 1.0 0 0.02 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 3. Base-Emitter Voltage IC, COLLECTOR CURRENT (AMP) 10 1.0 TC = 25°C 0.5 dc 500 s 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.05 0.02 0.01 5.0 2.0 VBE(sat) @ IC/IB = 5 V VBE(on) @ VCE = 4 V TJ = 25°C VCE(sat) @ IC/IB = 5 V 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) 1 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 1.0ms 1.0 Figure 4. “On” Voltages 5.0 2.0 0.2 0.3 0.1 0.5 IC, COLLECTOR CURRENT (AMPS) 1 0.4 0.05 0.05 Figure 2. Collector-Emitter Saturation Voltage 1.2 0 0.02 0.03 VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 1.4 0.6 150°C 0.2 1.4 VBE(sat) @ IC/IB = 5.0 −55 °C 0.4 Figure 1. DC Current Gain 1.0 TJ = 25°C 0.8 10 20 30 50 100 200 300 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 500 Figure 5. Forward Bias Safe Operating Area http://onsemi.com 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD5731 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 P(pk) RJC(t) = r(t) RJC RJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) JC(t) 0.05 0.1 0.07 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 30 50 100 200 300 500 1k Figure 6. Thermal Response TURN−ON PULSE t1 VBE(off) Vin 0V VCC t1 ≤ 7.0 ns 100 ≤ t2 < 500 s t3 < 15 ns APPROX . −11 V t2 RC SCOPE RB Vin t3 Cjd << Ceb 51 +4.0 V APPROX. +9.0 V DUTY CYCLE ≈ 2.0% TURN−OFF PULSE Figure 7. Switching Time Equivalent Circuit 5.0 1.0 0.2 2.0 td t, TIME (s) µ t, TIME (s) µ 0.3 TJ = 25°C VCC = 200 V IC/IB = 5.0 ts 3.0 TJ = 25°C VCC = 200 V IC/IB = 5.0 tr 0.5 0.1 0.05 tf 1.0 0.5 0.3 0.2 0.03 0.1 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 0.05 0.02 0.03 2.0 Figure 8. Turn-On Resistive Switching Times 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 Figure 9. Resistive Turn-Off Switching Times http://onsemi.com 4 2.0 MJD5731 Test Circuit Voltage and Current Waveforms VCE MONITOR RBB1 = 150 MJE171 INPUT TUT 100 mH + 50 − 50 VBB1 = 10 V + − RBB2 = 100 VBB2 = 0 INPUT VOLTAGE 0V tw ≈ 3 ms (SEE NOTE 1) −5 V 100 ms VCC = 20 V IC MONITOR 0.63 A COLLECTOR CURRENT 0 V RS = 0.1 VCER COLLECTOR VOLTAGE 10 V VCE(sat) Figure 10. Inductive Load Switching http://onsemi.com 5 MJD5731 PACKAGE DIMENSIONS DPAK CASE 395A-13 ISSUE AB C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 −−− 0.030 0.050 0.138 −−− STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 6 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 −−− 0.77 1.27 3.51 −−− MJD5731 PACKAGE DIMENSIONS DPAK CASE 395-07 ISSUE M C B V E R 4 A 1 2 3 S -TSEATING PLANE K J F H D G 3 PL 0.13 (0.005) M T http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 MJD5731 SWITCHMODE is a trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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