ONSEMI MJD148T4

MJD148
NPN Silicon Power
Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
• High Gain − 50 Min @ IC = 2.0 A
• Low Saturation Voltage − 0.5 V @ IC = 2.0 A
• High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
IC = 250 mAdc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
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4.0 Amps
45 Volts
20 Watts
POWER TRANSISTOR
MARKING
DIAGRAM
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
Value
Unit
VCEO
45
Vdc
Collector−Base Voltage
VCB
45
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
Peak
IC
4.0
7.0
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+ 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RJA
71.4
°C/W
4
DPAK
CASE 369C
STYLE 1
1 2
3
J148
Y
WW
YWW
J148
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
MJD148T4
Package
Shipping†
DPAK
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 2
1
Publication Order Number:
MJD148/D
MJD148
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
IC = 100 mAdc, IB = 0
VCEO(sus)
45
−
Vdc
Collector Cutoff Current
VCB = 45 Vdc, IE = 0
ICBO
−
20
Adc
Emitter Cutoff Current
VBE = 5 Vdc, IC = 0
IEBO
−
1
mAdc
DC Current Gain (Note 2)
IC = 10 mAdc, VCE = 5 Vdc
IC = 0.5 Adc, VCE = 1 Vdc
IC = 2 Adc, VCE = 1 Vdc
IC = 3 Adc, VCE = 1 Vdc
hFE
40
85
50
30
−
375
−
−
−
Collector−Emitter Saturation Voltage (Note 2)
IC = 2 Adc, IB = 0.2 Adc
VCE(sat)
−
0.5
Vdc
Base−Emitter On Voltage (Note 2)
IC = 2 Adc, VCE = 1 Vdc
VBE(on)
−
1.1
Vdc
fT
3
−
MHz
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
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2
MJD148
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL CHARACTERISTICS
10
TJ = 150°C
VCE = 2 V
VCE = 10 V
5
3
2
1
= 25°C
0.5
−55°C
0.3
0.2
0.1
0.004
0.007 0.01
0.02
0.03
0.05
0.1
0.2
0.3
IC, COLLECTOR CURRENT (A)
0.5
1
2
3
4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. DC Current Gain
2
TJ = 25°C
1.6
1.2
IC = 10 mA
100 mA
1A
3A
0.8
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
3
5 7 10
IB, BASE CURRENT (mA)
20
Figure 2. Collector Saturation Region
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3
30
50 70 100
200 300 500
MJD148
+ 2.5
y, TEMPERATURE COEFFICIENTS
(mV/°C)
2
TJ = 25°C
VOLTAGE (V)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.020.030.05 0.1 0.20.3 0.5
1
IC, COLLECTOR CURRENT (A)
2
34
*APPLIES FOR IC/IB ≤ hFE/2
*TJ = − 65°C to + 150°C
+2
+ 1.5
+1
+ 0.5
*V for VCE(sat)
0
−0.5
−1
−1.5
V for VBE
−2
−2.5
0.005 0.01 0.020.030.05 0.1 0.20.3 0.5
1
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
2
3 4
500
1k
Figure 4. Temperature Coefficients
103
IC, COLLECTOR CURRENT (mA)
VCE = 30 V
102
101
100
10−1
10−2
TJ = 150°C
100°C
REVERSE
FORWARD
25°C
10−3
−0.4 −0.3 −0.2 −0.1
ICES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
VBE, BASE−EMITTER VOLTAGE (V)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 5. Collector Cut−Off Region
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
P(pk)
ZJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.1
0.07
0.05
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
t, TIME (ms)
10
Figure 6. Thermal Response
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4
20
50
100
200
MJD148
IC, COLLECTOR CURRENT (A)
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 150°C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150°C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
dc
1
5 ms
0.5
0.3
0.2
1 ms
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C SINGLE PULSE, D ≤ 0.1%
TJ = 150°C
0.1
0.05
0.03
0.02
0.01
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
500 s
5
3
2
1
20 30
50 70
2
3
5 7 10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Maximum Rated Forward Bias
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5
MJD148
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm inches
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MJD148/D