ONSEMI MJE15035G

MJE15034 NPN,
MJE15035 PNP
Preferred Device
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
http://onsemi.com
Complementary silicon plastic power transistors are designed for
use as high−frequency drivers in audio amplifiers.
Features
• hFE = 100 (Min) @ IC = 0.5 Adc
•
•
•
•
•
•
= 10 (Min) @ IC = 2.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035
High Current Gain − Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO−220AB Compact Package
Epoxy meets UL 94 V−0 @ 0.125 in
ESD Ratings: Machine Model: C
Human Body Model: 3B
Pb−Free Packages are Available*
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
350 VOLTS, 50 WATTS
4
1
2
Rating
Symbol
Value
Unit
VCEO
350
Vdc
Collector−Base Voltage
VCB
350
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
4.0
8.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
50
0.40
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
TJ, Tstg
–65 to +150
_C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
_C/W
Device
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
3
MARKING DIAGRAM
MAXIMUM RATINGS
Collector−Emitter Voltage
TO−220AB
CASE 221A
STYLE 1
1
MJE1503xG
AYWW
MJE1503x = Device Code
x = 4 or 5
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
MJE15034
TO−220AB
50 Units / Rail
MJE15034G
TO−220AB
(Pb−Free)
50 Units / Rail
MJE15035
TO−220AB
50 Units / Rail
MJE15035G
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE15034/D
MJE15034 NPN, MJE15035 PNP
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
350
−
Vdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
10
mAdc
100
100
50
10
−
−
−
−
−
ON CHARACTERISTICS (Note 1)
DC Current Gain
hFE
(IC = 0.1 Adc, VCE = 5.0 Vdc)
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.5
Vdc
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
−
1.0
Vdc
fT
30
−
MHz
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
10
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
TA TC
3.0 60
2.0 40
TC
TA
1.0 20
0
0
0
20
40
60
80
100
120
140
160
100mS
DC
1.0
0.1
0.01
1.0
T, TEMPERATURE (°C)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 1. Power Derating
1.0
0.7
0.5
0.3
Figure 2. Active Region Safe Operating Area
0.1
0.02
0.01
0.02
SINGLE PULSE
0.05
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
0.05
0.03
0.01
0.01
1000
0.2
0.1
0.02
100
D = 0.5
0.2
0.07
0.05
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 3. Thermal Response
http://onsemi.com
2
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500 1.0 k
MJE15034 NPN, MJE15035 PNP
1000
1000
TJ = 150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
100
−40°C
10
1.0
0.01
0.1
1.0
25°C
−40°C
100
10
1.0
0.01
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 5.0 V
NPN MJE15034
Figure 5. DC Current Gain, VCE = 5.0 V
PNP MJE15035
1000
10
1000
TJ = 150°C
100
hFE, DC CURRENT GAIN
25°C
−40°C
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1.0
0.01
0.1
1.0
100
10
1.0
0.01
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 20 V
NPN MJE15034
Figure 7. DC Current Gain, VCE = 20 V
PNP MJE15035
10
IC/IB = 10
1.0
25°C
TJ = 150°C
0.1
−40°C
0.01
0.01
25°C
−40°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
TJ = 150°C
0.1
1.0
10
10
IC/IB = 10
1.0
−40°C
0.1
TJ = 150°C
25°C
0.01
0.01
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. VCE(sat)
PNP MJE15035
Figure 8. VCE(sat)
NPN MJE15034
http://onsemi.com
3
10
10
MJE15034 NPN, MJE15035 PNP
10
IC/IB = 10
1.0
BASE−EMITTER VOLTAGE (V)
BASE−EMITTER VOLTAGE (V)
10
−40°C
25°C
TJ = 150°C
0.1
0.01
0.1
1.0
IC/IB = 10
−40°C
1.0
25°C
TJ = 150°C
0.1
0.01
10
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 11. VBE(sat)
PNP MJE15035
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1.2
1.0
−40°C
0.6
25°C
0.4
TJ = 150°C
0.2
0.0
0.01
0.1
1.0
10
1.4
1.2
1.0
−40°C
0.8
0.6
25°C
0.4
TJ = 150°C
0.2
0.0
0.01
IC, COLLECTOR CURRENT (AMPS)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
TJ = 25°C
f test = 1 MHz
50
40
30
VCE= 10 V
20
10
0
0.001
0.01
0.1
1.0
10
Figure 13. VBE(on)
PNP MJE15035
80
60
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 12. VBE(on)
NPN MJE15034
70
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. VBE(sat)
NPN MJE15034
0.8
1.0
1.0
10
100
80
TJ = 25°C
f test = 1 MHz
60
40
VCE= 10 V
20
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Typical Current Gain Bandwidth Product
PNP MJE15035
Figure 14. Typical Current Gain Bandwidth Product
NPN MJE15034
http://onsemi.com
4
MJE15034 NPN, MJE15035 PNP
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE
ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.018 0.025
0.500 0.562
0.045 0.060
0.190 0.210
0.100 0.120
0.080
0.110
0.045 0.055
0.235 0.255
0.000 0.050
0.045
−−−
−−− 0.080
MILLIMETERS
MIN
MAX
14.48 15.75
9.66 10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70 14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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MJE15034/D