BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. http://onsemi.com 4.0 AMP POWER TRANSISTORS PNP SILICON Features • Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TO−225AA CASE 77 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD436 BD438 BD440 BD442 VCEO 32 45 60 80 Vdc Collector−Base Voltage BD436 BD438 BD440 BD442 VCBO 32 45 60 80 Vdc VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 36 288 W W/°C TJ, Tstg – 55 to + 150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 3.5 °C/W Emitter−Base Voltage Operating and Storage Junction Temperature Range 3 2 1 MARKING DIAGRAM ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ YWW BD4xxG BD4xx Y WW G THERMAL CHARACTERISTICS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 14 1 = Device Code xx = 36, 36T, 38, 40, 42 = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping BD436 TO−225AA 500 Units/Box BD436G TO−225AA (Pb−Free) 500 Units/Box BD436T TO−225AA 50 Units/Rail BD436TG TO−225AA (Pb−Free) 50 Units/Rail BD438 TO−225AA 500 Units/Box BD438G TO−225AA (Pb−Free) 500 Units/Box BD440 TO−225AA 500 Units/Box BD440G TO−225AA (Pb−Free) 500 Units/Box BD442 TO−225AA 500 Units/Box BD442G TO−225AA (Pb−Free) 500 Units/Box Publication Order Number: BD438/D BD436, BD438, BD440, BD442 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 100 mA, IB = 0) Characteristic BD436 BD438 BD440 BD442 V(BR)CEO 32 45 60 80 − − − − − − − − Vdc Collector−Base Breakdown Voltage (IC = 100 mA, IB = 0) BD436 BD438 BD440 BD442 V(BR)CBO 32 45 60 80 − − − − − − − − Vdc V(BR)EBO 5.0 − − Vdc − − − − − − − − 0.1 0.1 0.1 0.1 IEBO − − 1.0 Emitter−Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 32 V, IE = 0) (VCB = 45 V, IE = 0) (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) ICBO BD436 BD438 BD440 BD442 Emitter Cutoff Current (VEB = 5.0 V) mAdc mAdc DC Current Gain (IC = 10 mA, VCE = 5.0 V) BD436 BD438 BD440 BD442 hFE 40 30 20 15 − − − − − − − − DC Current Gain (IC = 500 mA, VCE = 1.0 V) BD436 BD438 BD440 BD442 hFE 85 85 40 40 − − − − 475 475 475 475 DC Current Gain (IC = 2.0 A, VCE = 1.0 V) BD436 BD438 BD440 BD442 hFE 50 40 25 15 − − − − − − − − − − − − − − − − 0.5 0.7 0.8 0.8 VBE(ON) − − − − 1.1 1.5 Vdc fT 3.0 − − MHz Collector Saturation Voltage (IC = 2.0 A, IB = 0.2 A) (IC = 3.0 A, IB = 0.3 A) Base−Emitter On Voltage (IC = 2.0 A, VCE = 1.0 V) VCE(sat) BD436 BD438 BD440 BD442 BD436/BD438 BD440/BD442 Current−Gain − Bandwidth Product (VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz) http://onsemi.com 2 Vdc VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) BD436, BD438, BD440, BD442 2.0 1.6 IC = 10 mA 100 mA 1.0 A 3.0 A 1.2 0.8 TJ = 255C 0.4 0 0.05 0.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 hFE, CURRENT GAIN (NORMALIZED) Figure 1. Collector Saturation Region 200 100 80 60 40 20 0 10 2 3 100 1 5 IC, COLLECTOR CURRENT (AMP) Figure 2. Current Gain IC, COLLECTOR CURRENT (AMP) 2.0 TJ = 25°C VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.030.05 0.1 0.2 0.3 0.5 10 TJ = 150°C dc SECONDARY BREAKDOWN THERMAL LIMIT TC = 25°C BONDING WIRE LIMIT 1.0 0.5 CURVES APPLY BELOW RATED VCEO BD438 0.1 1.0 2.0 3.0 4.0 5 ms 4.0 BD440 BD442 1.0 2.0 5.0 10 20 50 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 4. Active Region Safe Operating Area Figure 3. “On” Voltage http://onsemi.com 3 BD436, BD438, BD440, BD442 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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