SEMICONDUCTOR TECHNICAL DATA The MC10E/100E112 is a quad driver with two pairs of OR/NOR outputs from each gate, and a common, buffered enable input. Using the data inputs the device can serve as an ECL memory address fan-out driver. Using just the enable input, the device serves as a clock driver, although the MC10E/100E111 is designed specifically for this purpose, and offers lower skew than the E112. For memory address driver applications where scan capabilities are required, please refer to the E212 device. • • • • QUAD DRIVER 600ps Max. Propagation Delay Common Enable Input Extended 100E VEE Range of – 4.2V to – 5.46V 75kΩ Input Pulldown Resistors Pinout: 28-Lead PLCC (Top View) Q3b Q3a Q3b 25 24 23 Q3a VCCO Q2b 22 21 20 FN SUFFIX PLASTIC PACKAGE CASE 776-02 Q2a 19 VCCO 26 18 Q2b D3 27 17 Q2a D2 28 16 VCC VEE 1 15 Q1b D1 2 14 Q1a D0 3 13 Q1b EN 4 12 Q1a LOGIC DIAGRAM Q0a D0 Q0b Q0a Q0b Q1a 5 NC 6 7 VCCO Q0a 8 9 10 Q0b Q0a D1 Q1b 11 Q1a Q1b Q0b VCCO Q2a * All VCC and VCCO pins are tied together on the die. D2 Q2b Q2a PIN NAMES Pin D0 – D3 Q2b Function Q3a Data Inputs D3 Q3b EN Enable Input Qna, Qnb True Outputs Q3a Qna, Qnb Inverting Outputs Q3b EN 12/93 Motorola, Inc. 1996 2–1 REV 2 MC10E112 MC100E112 DC CHARACTERISTICS (VEE = VEE(min) to VEE(max); VCC = VCCO = GND) 0°C Symbol IIH IEE Characteristic min typ 25°C max min typ 85°C max min typ max Unit Condition µA Input HIGH Current D EN 200 200 Power Supply Current 10E 100E 200 200 200 200 mA 47 47 56 56 47 47 56 56 47 54 56 65 AC CHARACTERISTICS (VEE = VEE(min) to VEE(max); VCC = VCCO = GND) 0°C Symbol 25°C 85°C Characteristic min typ max min typ max min typ max tPLH tPHL Propagation Delay to Output D EN 200 275 400 450 600 675 200 275 400 450 600 675 200 275 400 450 600 675 tSKEW Within-Device Skew Dn to Qn, Qn Qna to Qnb tr tf Rise/Fall Times 20 - 80% Unit Condition ps ps 80 40 80 40 80 40 1 2 ps 275 425 700 275 425 700 275 425 700 1. Within-device skew is defined as identical transitions on similar paths through a device. 2. Skew defined between common OR or common NOR outputs of a single gate. MOTOROLA 2–2 ECLinPS and ECLinPS Lite DL140 — Rev 4 MC10E112 MC100E112 OUTLINE DIMENSIONS FN SUFFIX PLASTIC PLCC PACKAGE CASE 776–02 ISSUE D 0.007 (0.180) B Y BRK -N- T L –M M U 0.007 (0.180) X G1 M S N T L –M S S N S D Z -L- -M- D W 28 V 1 C A 0.007 (0.180) M R 0.007 (0.180) M T L –M S T L –M S N S N S H S N S 0.007 (0.180) M T L –M N S S 0.004 (0.100) G J -T- K SEATING PLANE F VIEW S G1 T L –M S N 0.007 (0.180) M T L –M S N S VIEW S S NOTES: 1. DATUMS -L-, -M-, AND -N- DETERMINED WHERE TOP OF LEAD SHOULDER EXITS PLASTIC BODY AT MOLD PARTING LINE. 2. DIM G1, TRUE POSITION TO BE MEASURED AT DATUM -T-, SEATING PLANE. 3. DIM R AND U DO NOT INCLUDE MOLD FLASH. ALLOWABLE MOLD FLASH IS 0.010 (0.250) PER SIDE. 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5. CONTROLLING DIMENSION: INCH. 6. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM BY UP TO 0.012 (0.300). DIMENSIONS R AND U ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 7. DIMENSION H DOES NOT INCLUDE DAMBAR PROTRUSION OR INTRUSION. THE DAMBAR PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE GREATER THAN 0.037 (0.940). THE DAMBAR INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE SMALLER THAN 0.025 (0.635). ECLinPS and ECLinPS Lite DL140 — Rev 4 T L –M K1 E S S VIEW D-D Z 0.010 (0.250) 0.010 (0.250) 2–3 DIM A B C E F G H J K R U V W X Y Z G1 K1 INCHES MIN MAX 0.485 0.495 0.485 0.495 0.165 0.180 0.090 0.110 0.013 0.019 0.050 BSC 0.026 0.032 0.020 — 0.025 — 0.450 0.456 0.450 0.456 0.042 0.048 0.042 0.048 0.042 0.056 — 0.020 2° 10° 0.410 0.430 0.040 — MILLIMETERS MIN MAX 12.32 12.57 12.32 12.57 4.20 4.57 2.29 2.79 0.33 0.48 1.27 BSC 0.66 0.81 0.51 — 0.64 — 11.43 11.58 11.43 11.58 1.07 1.21 1.07 1.21 1.07 1.42 — 0.50 2° 10° 10.42 10.92 1.02 — MOTOROLA MC10E112 MC100E112 Motorola reserves the right to make changes without further notice to any products herein. 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