ONSEMI MPS6726

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by MPS6726/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Value
Unit
VCEO
MPS6726
MPS6727
Collector – Base Voltage
Vdc
2
VCBO
MPS6726
MPS6727
Emitter – Base Voltage
–5.0
Collector Current — Continuous
IC
–1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Vdc
–40
–50
VEBO
Operating and Storage Junction
Temperature Range
1
–30
–40
Vdc
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
–30
–40
—
—
–40
–50
—
—
–5.0
—
—
—
–0.1
–0.1
—
–0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CEO
MPS6726
MPS6727
V(BR)CBO
MPS6726
MPS6727
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
Vdc
V(BR)EBO
Vdc
µAdc
ICBO
MPS6726
MPS6727
IEBO
Vdc
µAdc
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
60
50
—
250
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –1000 mAdc, VCE = –1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = –1000 mAdc, IB = –100 mAdc)
VCE(sat)
—
–0.5
Vdc
Base – Emitter On Voltage
(IC = –1000 mAdc, VCE = –1.0 Vdc)
VBE(on)
—
–1.2
Vdc
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
30
pF
Small–Signal Current Gain
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)
hfe
2.5
25
—
SMALL– SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
–1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
h FE , CURRENT GAIN
200
100
70
VCE = –1.0 V
TJ = 25°C
50
20
–10
–20
–50
–100
–200
–500
–1000
–0.6
–0.4
–0.2
–50 –100
Figure 2. Collector Saturation Region
qV B, TEMPERATURE COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
2
IC =
IC =
IC =
–250 –500 mA –1000 mA
mA
Figure 1. DC Current Gain
VBE(SAT) @ IC/IB = 10
VBE(ON) @ VCE = –1.0 V
VCE(SAT) @ IC/IB = 10
0
–1.0 –2.0
IC =
–100
mA
IB, BASE CURRENT (mA)
–0.4
–0.2
IC =
–50 mA
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
–0.6
IC =
–10 mA
TJ = 25°C
0
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–1.0
–0.8
–0.8
–5.0
–10
–20
–50 –100 –200
–500 –1000
–0.8
–1.2
–1.6
qVB for VBE
–2.0
–2.4
–2.8
–1.0 –2.0
–5.0
–10
–20
–50 –100 –200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
–500 –1000
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
160
TJ = 25°C
200
C, CAPACITANCE (pF)
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
VCE = –10 V
TJ = 25°C
f = 20 MHz
100
70
50
120
80
Cibo
40
Cobo
30
–10
0
–20
–50
–100
–200
–500
Cobo
Cibo
–1000
IC, COLLECTOR CURRENT (mA)
–5.0
–1.0
–20
–10
–15
–2.0
–3.0
–4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current Gain — Bandwidth Product
Figure 6. Capacitance
–1.0 k
I C , COLLECTOR CURRENT (mA)
1.0 s
–500
1.0 ms
100 ms
TA = 25°C
TC = 25°C
–200
–100
–25
–5.0
DUTY CYCLE ≤ 10%
MPS6726
MPS6727
–50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–20
–10
–1.0
–2.0
–5.0
–10
–20 –30 –40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating
Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
K
X X
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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4
◊
MPS6726/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data