Order this document by MPSW01/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage VCBO Unit 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) Vdc 40 50 VEBO 5.0 Vdc Collector Current — Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 1 Vdc 30 40 MPSW01 MPSW01A Emitter – Base Voltage Value THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 40 — — 40 50 — — 5.0 — — — 0.1 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CEO MPSW01 MPSW01A V(BR)CBO MPSW01 MPSW01A Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) V(BR)EBO Vdc IEBO Vdc µAdc ICBO MPSW01 MPSW01A Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width Vdc µAdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 55 60 50 — — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) — 0.5 Vdc Base–Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) VBE(on) — 1.2 Vdc fT 50 — MHz Cobo — 20 pF SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) 300 h FE , CURRENT GAIN 200 100 70 VCE = 1.0 V TJ = 25°C 50 30 20 50 100 200 IC = 1000 mA 0.4 IC = 10 mA 0.2 IC = IC = 500 mA IC = 250 mA 100 mA IC = 50 mA 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 Figure 1. DC Current Gain Figure 2. Collector Saturation Region VBE(on) @ VCE = 1.0 V 0.4 VCE(sat) @ IC/IB = 10 0 1.0 2.0 1000 IB, BASE CURRENT (mA) VBE(sat) @ IC/IB = 10 0.2 2 0.6 IC, COLLECTOR CURRENT (mA) TJ = 25°C 0.6 500 5.0 10 20 50 100 200 500 1000 qVB , TEMPERATURE COEFFICIENT (mV/°C) V, VOLTAGE (VOLTS) 0.8 0.8 0 10 1.0 TJ = 25°C 50 100 –0.8 –1.2 –1.6 qVB FOR VBE –2.0 –2.4 –2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient Motorola Small–Signal Transistors, FETs and Diodes Device Data 80 300 TJ = 25°C 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 100 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 30 60 40 Cibo 20 Cobo 0 10 20 50 100 200 1000 Cobo Cibo IC, COLLECTOR CURRENT (mA) 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance IC , COLLECTOR CURRENT (mA) 1k 1.0 ms 100 ms 1.0 s 500 200 TA = 25°C 100 DUTY CYCLE ≤ 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 50 20 10 1.0 TC = 25°C MPSW01 MPSW01A 2.0 5.0 10 20 30 40 VCE, COLLECTOR–EMITTER VOLTAGE (V) Figure 7. Active Region — Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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