AMICC A67L9318E-3.8F

A67L9318/A67L8336
512K X 18, 256K X 36 LVTTL, Pipelined ZeBLTM SRAM
Preliminary
Document Title
512K X 18, 256K X 36 LVTTL, Pipelined ZeBLTM SRAM
Revision History
Rev. No.
0.0
PRELIMINARY
History
Issue Date
Remark
Initial issue
July 13, 2005
Preliminary
(July, 2005, Version 0.0)
AMIC Technology, Corp.
A67L9318/A67L8336
Preliminary
512K X 18, 256K X 36 LVTTL, Pipelined ZeBLTM SRAM
Features
Fast access time:
2.6/2.8/3.2/3.5/3.8/4.2 (250/227/200/166/150/133MHz)
Zero Bus Latency between READ and WRITE cycles
allows 100% bus utilization
Signal +3.3V ± 5% power supply
Individual Byte Write control capability
Clock enable ( CEN ) pin to enable clock and suspend
operations
Clock-controlled and registered address, data and
control signals
Registered output for pipelined applications
Three separate chip enables allow wide range of
options for CE control, address pipelining
Internally self-timed write cycle
Selectable BURST mode (Linear or Interleaved)
SLEEP mode (ZZ pin) provided
Available in 100 pin LQFP package
General Description
The AMIC Zero Bus Latency (ZeBLTM) SRAM family
employs high-speed, low-power CMOS designs using an
advanced CMOS process.
The A67L9318, A67L8336 SRAMs integrate a 512K X 18,
256K X 36 SRAM core with advanced synchronous
peripheral circuitry and a 2-bit burst counter. These SRAMs
are optimized for 100 percent bus utilization without the
insertion of any wait cycles during Write-Read alternation.
The positive edge triggered single clock input (CLK) controls
all synchronous inputs passing through the registers. The
synchronous inputs include all address, all data inputs,
active low chip enable ( CE ), two additional chip enables for
easy depth expansion (CE2, CE2 ), cycle start input
(ADV/ LD ), synchronous clock enable ( CEN ), byte write
Write cycles are internally self-time and synchronous with
the rising edge of the clock input and when R/ W is Low.
The feature simplified the write interface. Individual Byte
enables allow individual bytes to be written. BW1 controls
I/Oa pins; BW2 controls I/Ob pins; BW3 controls I/Oc pins;
and BW4 controls I/Od pins. Cycle types can only be
defined when an address is loaded.
The SRAM operates from a +3.3V power supply, and all
inputs and outputs are LVTTL-compatible. The device is
ideally suited for high bandwidth utilization systems.
enables ( BW1, BW2 , BW3 , BW4 ) and read/write (R/ W ).
Asynchronous inputs include the output enable ( OE ), clock
(CLK), SLEEP mode (ZZ, tied LOW if unused) and burst
mode (MODE). Burst Mode can provide either interleaved or
linear operation, burst operation can be initiated by
synchronous address Advance/Load (ADV/ LD ) pin in Low
state. Subsequent burst address can be internally
generated by the chip and controlled by the same input pin
ADV/ LD in High state.
PRELIMINARY (July, 2005, Version 0.0)
2
AMIC Technology, Corp.
A67L9318/A67L8336
Pin Configuration
A18
A8
A9
83
82
81
A9
NC
84
A8
OE
ADV/
LD
86
A17
CEN
87
NC
OE
ADV/
LD
R/W
88
85
CEN
CLK
89
R/W
VSS
90
CLK
VCC
91
VSS
CE2
92
VCC
BW1
93
CE2
BW2
94
BW1
NC
95
BW2
BW4
NC
96
BW3
CE2
CE2
97
CE
CE
98
512K x 18
A7
A7
99
A6
A6
100
256K x 36
I/Oc8
NC
1
80
A10
I/Ob8
I/Oc0
NC
2
79
NC
I/Ob7
I/Oc1
NC
3
78
NC
I/Ob6
VCCQ
VCCQ
4
77
VCCQ
VCCQ
VSSQ
VSSQ
5
76
VSSQ
VSSQ
I/Oc2
NC
6
75
NC
I/Ob5
I/Oc3
NC
7
74
I/Oa0
I/Ob4
I/Oc4
I/Ob8
8
73
I/Oa1
I/Ob3
I/Oc5
I/Ob7
9
72
I/Oa2
I/Ob2
VSSQ
VSSQ
10
71
VSSQ
VSSQ
VCCQ
VCCQ
11
70
VCCQ
VCCQ
I/Oc6
I/Ob6
12
69
I/Oa3
I/Ob1
I/Oc7
I/Ob5
13
68
I/Oa4
I/Ob0
VCC
VCC
14
67
VSS
VSS
VCC
VCC
15
66
VCC
VCC
VCC
VCC
16
65
VCC
VCC
VSS
VSS
17
64
ZZ
ZZ
I/Od0
I/Ob4
18
63
I/Oa5
I/Oa7
I/Od1
I/Ob3
19
62
I/Oa6
I/Oa6
VCCQ
VCCQ
20
61
VCCQ
VCCQ
VSSQ
VSSQ
21
60
VSSQ
VSSQ
I/Od2
I/Ob2
22
59
I/Oa7
I/Oa5
I/Od3
I/Ob1
23
58
I/Oa8
I/Oa4
I/Od4
I/Ob0
24
57
NC
I/Oa3
I/Od5
NC
25
56
NC
I/Oa2
VSSQ
VSSQ
26
55
VSSQ
VSSQ
VCCQ
VCCQ
27
54
VCCQ
VCCQ
I/Od6
NC
28
53
NC
I/Oa1
I/Od7
NC
29
52
NC
I/Oa0
I/Od8
NC
30
51
NC
I/Oa8
34
35
36
37
38
39
40
41
42
44
45
46
47
48
49
50
A3
A2
A1
A0
NC
NC
VSS
VCC
NC
NC
A11
A12
A13
A14
A15
A16
A17
A3
A2
A1
A0
NC
NC
VSS
VCC
NC
NC
A10
A11
A12
A13
A14
A15
A16
PRELIMINARY (July, 2005, Version 0.0)
3
43
33
A4
A4
32
31
A5
MODE MODE
A5
A67L9318E
A67L8336E
AMIC Technology, Corp.
A67L9318/A67L8336
Block Diagram (256K X 36)
ZZ
MODE
LOGIC
MODE
ADV/LD
CLK
LOGIC
CEN
CLK
A0-A17
BURST
LOGIC
ADDRESS
COUNTER
CLR
WRITE
ADDRESS
REGISTER
ADDRESS
REGISTERS
9
9
ADV/LD
R/W
BW1
BW2
BW3
BW4
WRITE
REGISTRY
&
CONTROL
LOGIC
9
9
WRITE
ADDRESS
REGISTER
BYTEa
WRITE
DRIVER
9
BYTEb
WRITE
DRIVER
9
256K x 9 x 4
MEMORY
BYTEc
WRITE
DRIVER
9
BYTEd
WRITE
DRIVER
9
SENSE
AMPS
ARRAY
DATA-IN
REGISTERS
CE
CHIP
ENABLE
LOGIC
CE2
CE2
PIPELINED
ENABLE
LOGIC
OUTPUT
REGISTERS
&
OUTPUT
BUFFERS
I/Os
DATA-IN
REGISTERS
OUTPUT
ENABLE
LOGIC
OE
PRELIMINARY
(July, 2005, Version 0.0)
4
AMIC Technology, Corp.
A67L9318/A67L8336
Block Diagram (512K X 18)
ZZ
MODE
LOGIC
MODE
ADV/LD
CLK
LOGIC
CEN
CLK
A0-A18
BURST
LOGIC
ADDRESS
COUNTER
CLR
WRITE
ADDRESS
REGISTER
ADDRESS
REGISTERS
9
ADV/LD
R/W
BW1
WRITE
REGISTRY
&
CONTROL
LOGIC
BW2
WRITE
ADDRESS
REGISTER
BYTEa
WRITE
DRIVER
9
512K X 9 X 2
MEMORY
9
BYTEb
WRITE
DRIVER
9
SENSE
AMPS
ARRAY
DATA-IN
REGISTERS
CE
CHIP
ENABLE
LOGIC
CE2
CE2
PIPELINED
ENABLE
LOGIC
OUTPUT
REGISTERS
&
OUTPUT
BUFFERS
I/OS
DATA-IN
REGISTERS
OUTPUT
ENABLE
LOGIC
OE
PRELIMINARY
(July, 2005, Version 0.0)
5
AMIC Technology, Corp.
A67L9318/A67L8336
Pin Description
Pin No.
LQFP (X18)
LQFP (X36)
37
36
35, 34, 33, 32,
100, 99, 82, 81,
44, 45, 46, 47,
48, 49, 50, 83
83
37
36
35, 34, 33, 32,
100, 99, 82, 81,
45, 46, 47, 48,
49, 50, 83
44
93 ( BW1)
94 ( BW2 )
Symbol
Description
A0
A1
A2 - A9
Synchronous Address Inputs : These inputs are registered
and must meet the setup and hold times around the rising
edge of CLK. A0 and A1 are the two lest significant bits
(LSB) of the address field and set the internal burst counter if
burst is desired.
A11 - A17
A18
A10
93 ( BW1)
94 ( BW2 )
95 ( BW3 )
96 ( BW4 )
BW1
BW2
BW3
89
89
CLK
98
98
CE
Synchronous Chip Enable : This active low input is used to
enable the device. This input is sampled only when a new
external address is loaded (ADV/ LD LOW).
92
92
CE2
Synchronous Chip Enable : This active low input is used to
enable the device and is sampled only when a new external
address is loaded (ADV/ LD LOW). This input can be used
for memory depth expansion.
97
97
CE2
Synchronous Chip Enable : This active high input is used to
enable the device and is sampled only when a new external
address is loaded (ADV/ LD LOW). This input can be used
for memory depth expansion.
86
86
OE
Output Enable : This active low asynchronous input enables
the data I/O output drivers.
85
85
ADV/ LD
Synchronous Address Advance/Load : When HIGH, this
input is used to advance the internal burst counter,
controlling burst access after the external address is loaded.
When HIGH, R/ W is ignored. A LOW on this pin permits a
new address to be loaded at CLK rising edge.
87
87
CEN
Synchronous Clock Enable : This active low input permits
CLK to propagate throughout the device. When HIGH, the
device ignores the CLK input and effectively internally
extends the previous CLK cycle. This input must meet setup
and hold times around the rising edge of CLK.
PRELIMINARY
(July, 2005, Version 0.0)
BW4
Synchronous Byte Write Enables : These active low inputs
allow individual bytes to be written when a WRITE cycle is
active and must meet the setup and hold times around the
rising edge of CLK. BYTE WRITEs need to be asserted on
the same cycle as the address, BWs are associated with
addresses and apply to subsequent data. BW1 controls I/Oa
pins; BW2 controls I/Ob pins; BW3 controls I/Oc pins;
BW4 controls I/Od pins.
Clock: This signal registers the address, data, chip enables,
byte write enables and burst control inputs on its rising edge.
All synchronous inputs must meet setup and hold times
around the clock are rising edge.
6
AMIC Technology, Corp.
A67L9318/A67L8336
Pin Description (continued)
Pin No.
Symbol
Description
LQFP (X18)
LQFP (X36)
64
64
ZZ
Snooze Enable : This active high asynchronous input causes
the device to enter a low-power standby mode in which all
data in the memory array is retained. When active, all other
inputs are ignored.
88
88
R/ W
Read/Write : This active input determines the cycle type
when ADV/ LD is LOW. This is the only means for
determining READs and WRITEs. READ cycles may not be
converted into WRITEs (and vice versa) other than by
loading a new address. A LOW on this pin permits BYTE
WRITE operations and must meet the setup and hold times
around the rising edge of CLK. Full bus width WRITEs occur
if all byte write enables are LOW.
74, 73, 72, 69, 68,
63, 62, 59, 58,
24, 23, 22, 19, 18
13, 12, 9, 8
51, 52, 53, 56, 57,
58, 59, 62, 63
68, 69, 72, 73, 74,
75, 78, 79, 80
1, 2, 3, 6, 7, 8, 9,
12, 13,
18, 19, 22, 23, 24,
25, 28, 29, 30
I/Oa
SRAM Data I/O : Byte “a” is I/Oa pins; Byte “b” is I/Ob pins;
Byte “c” is I/Oc pins; Byte “d” is I/Od pins. Input data must
meet setup and hold times around CLK rising edge.
31
31
MODE
Mode : This input selects the burst sequence. A LOW on this
pin selects linear burst. NC or HIGH on this pin selects
interleaved burst. Do not alter input state while device is
operating.
1, 2, 3, 6, 7, 25, 28,
29, 30, 38, 39,
42,43 51, 52, 53,
56, 57, 75, 78, 79,
95, 96
38,39,42,43
NC
No Connect : These pins can be left floating or connected to
GND to minimize thermal impedance.
15, 41, 65, 91
15, 41, 65, 91
VCC
Power Supply : See DC Electrical Characteristics and
Operating Conditions for range.
14, 16, 66
14, 16, 66
VCC
These pins do not have to be connected directly to VCC as
long as the input voltage is ≥ VIH. This input is not connected
to VCC bus internally.
4, 11, 20, 27,
54, 61, 70, 77
4, 11, 20, 27, 54,
61, 70, 77
VCCQ
17, 40, 90
17, 40, 90
VSS
5,10,21,26,
55,60,71,76
5,10,21,26,
55,60,71,76
VSSQ
PRELIMINARY
(July, 2005, Version 0.0)
I/Ob
I/Oc
I/Od
Isolated Output Buffer Supply : See DC Electrical
Characteristics and Operating Conditions for range.
Ground : GND.
Isolated Output Buffer Ground
7
AMIC Technology, Corp.
A67L9318/A67L8336
Truth Table (Notes 5 - 7)
Operation
Address
Used
None
CE
CE2 CE2
ZZ
ADV/
LD
L
R/ W
BWx
OE
CEN
CLK
I/O
Notes
Deselected Cycle,
H
X
X
L
X
X
X
L
L→H High-Z
Power-down
Deselected Cycle,
None
X
H
X
L
L
X
X
X
L
L→H High-Z
Power-down
Deselected Cycle,
None
X
X
L
L
L
X
X
X
L
L→H High-Z
Power-down
Continue Deselect
None
X
X
X
L
H
X
X
X
L
L→H High-Z
1
Cycle
READ Cycle
External
L
L
H
L
L
H
X
L
L
L→H
Q
(Begin Burst)
READ Cycle
Next
X
X
X
L
H
X
X
L
L
L→H
Q
1,7
(Continue Burst)
NOP/Dummy READ
External
L
L
H
L
L
H
X
H
L
L→H High-Z
2
(Begin Burst)
Dummy READ
Next
X
X
X
L
H
X
X
H
L
L→H High-Z
1,2,7
(Continue Burst)
WRITE Cycle
External
L
L
H
L
L
L
L
X
L
L→H
D
3
(Begin Burst)
WRITE Cycle
Next
X
X
X
L
H
X
L
X
L
L→H
D
1,3,7
(Continue Burst)
NOP/WRITE Abort
None
L
L
H
L
L
L
H
X
L
L→H High-Z
2,3
(Begin Burst)
WRITE Abort
Next
X
X
X
L
H
X
H
X
L
L→H High-Z 1,2,3,7
(Continue Burst)
IGNORE Clock Edge
Current
X
X
X
L
X
X
X
X
H
L→ H
4
(Stall)
SLEEP Mode
None
X
X
X
H
X
X
X
X
X
X
High-Z
Notes:
1. Continue Burst cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or
WRITE) is chosen in the initial Begin Burst cycle. A Continue Deselect cycle can only be entered if a Deselect cycle is
executed first.
2. Dummy READ and WRITE Abort cycles can be considered NOPs because the device performs no operation. A WRITE
Abort means a WRITE command is given, but no operation is performed.
3. OE may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off the
output drivers during a WRITE cycle. Some users may use OE when the bus turn-on and turn-off times do not meet their
requirements.
4. If an Ignore Clock Edge command occurs during a READ operation, the I/O bus will remain active (Low-Z). If it occurs
during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the Ignored Clock
Edge cycle.
5. X means “Don’t Care.” H means logic HIGH. L means logic LOW. BWx = H means all byte write signals ( BW1, BW2 , BW3
and BW4 ) are HIGH. BWx = L means one or more byte write signals are LOW.
6. BW1enables WRITEs to Byte “a” (I/Oa pins); BW2 enables WRITEs to Byte “b” (I/Ob pins); BW3 enables WRITEs to
Byte “c” (I/Oc pins); BW4 enables WRITEs to Byte “d” (I/Od pins).
7. The address counter is incremented for all Continue Burst cycles.
PRELIMINARY
(July, 2005, Version 0.0)
8
AMIC Technology, Corp.
A67L9318/A67L8336
Partial Truth Table for READ/WRITE Commands (X18)
Operation
R/ W
BW1
BW2
READ
H
X
X
WRITE Byte “a”
L
L
H
WRITE Byte “b”
L
H
L
WRITE all bytes
L
L
L
WRITE Abort/NOP
L
H
H
Note : Using and BYTE WRITE(s), any one or more bytes may be written.
Partial Truth Table for READ/WRITE Commands (X36)
Operation
R/ W
BW1
BW2
BW3
BW4
READ
H
X
X
X
X
WRITE Byte “a”
L
L
H
H
H
WRITE Byte “b”
L
H
L
H
H
WRITE Byte “c”
L
H
H
L
H
WRITE Byte “d”
L
H
H
H
L
WRITE all bytes
L
L
L
L
L
WRITE Abort/NOP
L
H
H
H
H
Note : Using R/ W and BYTE WRITE(s), any one or more bytes may be written.
Linear Burst Address Table (MODE = LOW)
First Address (External)
Second Address (Internal)
Third Address (Internal)
Fourth Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
Interleaved Burst Address Table (MODE = HIGH or NC)
First Address (External)
Second Address (Internal)
Third Address (Internal)
Fourth Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
PRELIMINARY
(July, 2005, Version 0.0)
9
AMIC Technology, Corp.
A67L9318/A67L8336
Absolute Maximum Ratings*
*Comments
Power Supply Voltage (VCC) . . . . . . . . . . -0.3V to +4.6V
Voltage Relative to GND for any Pin Except VCC (Vin,
Vout) . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC +0.3V
Operating Temperature (Topr) . . . . . . . . . . . 0°C to 70°C
Storage Temperature (Tbias) . . . . . . . . . . -10°C to 85 °C
Storage Temperature (Tstg) . . . . . . . . . . -55°C to 125°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics and Operating Conditions
(0°C ≤ TA ≤ 70°C, VCC, VCCQ = +3.3V± 5% unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Max.
Unit
Note
VIH
Input High Voltage
1.7
VCC+0.3
V
1,2
VIL
Input Low Voltage
-0.3
0.8
V
1,2
ILI
Input Leakage Current
0V ≤ VIH ≤ VCC
-2.0
TBD
µA
ILO
Output Leakage Current
Output(s) disabled,
-2.0
TBD
µA
0V ≤ VIN≤ VCC
VOH
Output High Voltage
IOH = -1.0mA
VOL
Output Low Voltage
IOL = 1.0mA
VCC
Supply Voltage
Isolated Output Buffer Supply
VCCQ
2.0
V
1,3
0.4
V
1,3
3.135
3.465
V
1
3.135
VCC
V
1,4
Conditions
Typ.
Max.
Unit
Note
Capacitance
Symbol
Parameter
CI
Control Input Capacitance
TA = 25°C; f = 1MHz
3
4
pF
6
CO
Input/Output Capacitance (I/O)
VCC = 3.3V
4
5
pF
6
CA
Address Capacitance
3
3.5
pF
6
Note : 1. All voltages referenced to VSS (GND).
2. Overshoot :
VIH ≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA
Undershoot : VIL ≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA
Power-up :
VIH ≤ +3.465V and VCC ≤ 3.135V for t ≤ 200ms
3. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values.
AC I/O curves are available upon request.
4. VCC and VCCQ can be externally wired together to the same power supply.
5. This parameter is sampled.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A67L9318/A67L8336
ICC Operating Condition and Maximum Limits
Max.
Symbol
Parameter
ICC
Unit
Conditions
TBD
mA
Device selected; All inputs ≤ VIL
or ≥ VIH; Cycle time ≥ tKC (MIN);
VCC = MAX; Outputs open
TBD
TBD
mA
Device deselected; VCC = MAX;
All inputs ≤ VSS+0.2 or ≥ VCC0.2; Cycle time ≥ tKC (MIN)
TBD
TBD
TBD
mA
TBD
TBD
TBD
TBD
mA
TBD
TBD
TBD
TBD
mA
-2.6
-2.8
-3.2
-3.5
-3.8
-4.2
Power Supply
Current : Operating
TBD
TBD
TBD
TBD
TBD
ISB
Standby
TBD
TBD
TBD
TBD
ISB1
Standby
TBD
TBD
TBD
ISB2
Standby
TBD
TBD
ISB2Z
SLEEP Mode
TBD
TBD
PRELIMINARY
(July, 2005, Version 0.0)
11
Device deselected; VCC = MAX;
All inputs ≤VSS+0.2 or ≥ VCC0.2; All inputs static; CLK
frequency=0
ZZ ≤ 0.2V
Device deselected; VCC = MAX;
All inputs ≤ VIL; or ≥ VIH;
All inputs static;
CLK frequency=MAX
ZZ ≥ VCC-0.2V
ZZ ≥ VIH
AMIC Technology, Corp.
A67L9318/A67L8336
AC Characteristics (Note 4)
(0°C ≤ TA ≤ 70°C, VCC = +3.3V± 5%)
-2.6
Symbol
-2.8
-3.2
-3.5
-3.8
-4.2
Unit
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Note
Clock
tKHKH
Clock cycle time
4.0
-
4.4
-
5.0
-
6.0
-
6.7
-
7.5
-
ns
tKF
Clock frequency
-
250
-
227
-
200
-
166
-
150
-
133
MH
tKHKL
Clock HIGH time
1.7
-
2.0
-
2.0
-
2.2
-
2.5
-
3.0
-
ns
tKLKH
Clock LOW time
1.7
-
2.0
-
2.0
-
2.2
-
2.5
-
3.0
-
ns
-
2.6
-
2.8
-
3.2
-
3.5
-
3.8
-
4.2
ns
Output Times
tKHQV
Clock to output valid
tKHQX
Clock to output invalid
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
ns
tKHQX1
Clock to output in Low-Z
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
1.5
-
ns
1,2,3
tKHQZ
Clock to output in High-Z
1.5
2.6
1.5
2.8
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.5
ns
1,2,3
tGLQV
OE to output valid
-
2.6
-
2.8
-
3.2
-
3.5
-
3.8
-
4.2
ns
4
tGLQX
OE to output in Low-Z
0
-
0
-
0
-
0
-
0
-
0
-
ns
1,2,3
tGHQZ
OE to output in High-Z
-
2.6
-
2.8
-
3.0
-
3.0
-
3.0
-
3.5
ns
1,2,3
Setup Times
tAVKH
Address
1.2
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
5
tEVKH
Clock enable ( CEN )
1.2
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
5
tCVKH
Control signals
1.2
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
5
tDVKH
Data-in
1.2
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
5
Hold Times
tKHAX
Address
0.3
-
0.4
-
0.4
-
0.5
-
0.5
-
0.5
-
ns
5
tKHEX
Clock enable ( CEN )
0.3
-
0.4
-
0.4
-
0.5
-
0.5
-
0.5
-
ns
5
tKHCX
Control signals
0.3
-
0.4
-
0.4
-
0.5
-
0.5
-
0.5
-
ns
5
tKHDX
Data-in
0.3
-
0.4
-
0.4
-
0.5
-
0.5
-
0.5
-
ns
5
Notes: 1. This parameter is sampled.
2. Output loading is specified with C1=5pF as in Figure 2.
3. Transition is measured ±200mV from steady state voltage.
4. OE can be considered a “Don’t Care” during WRITE; however, controlling OE can help fine-tune a system for
turnaround timing.
5. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of
CLK when ADV/ LD is LOW and chip enabled. All other synchronous inputs meet the setup and hold times with
stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each
rising edge of CLK (when ADV/ LD is LOW) to remain enabled.
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AMIC Technology, Corp.
A67L9318/A67L8336
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
1.0ns
Input Timing Reference Levels
1.25V
Output Reference Levels
1.25V
Output Load
See Figures 1 and 2
+3.3V
319Ω
Q
Q
ZO=50Ω
50Ω
353Ω
5pF
VT=1.5V
Figure 1
Output Load Equivalent
PRELIMINARY
(July, 2005, Version 0.0)
Figure 2
Output Load Equivalent
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AMIC Technology, Corp.
A67L9318/A67L8336
SLEEP Mode
SLEEP Mode is a low current “Power-down” mode in which
the device is deselected and current is reduced to ISB2Z. This
duration of SLEEP Mode is dictated by the length of time the
ZZ is in a HIGH state. After entering SLEEP Mode, all inputs
except ZZ become disabled and all outputs go to High-Z.
The ZZ pin is asynchronous, active high input that causes the
device to enter SLEEP Mode. When the ZZ pin becomes
logic HIGH, ISB2Z is guaranteed after the time tZZI is met.
Any operation pending when entering SLEEP Mode is not
guaranteed to successfully complete. Therefore, SLEEP
Mode (READ or WRITE) must not be initiated until valid
pending operations are completed. Similarly, when exiting
SLEEP Mode during tRZZ, only a DESELECT or READ cycle
should be given while the SRAM is transitioning out of
SLEEP Mode.
SLEEP Mode Electrical Characteristics
(VCC, VCCQ = +3.3V±5%)
Symbol
ISB2Z
Parameter
Current during SLEEP Mode
Conditions
Min.
Max.
Unit
ZZ ≥ VIH
-
60
mA
Note
tZZ
ZZ active to input ignored
0
2(tKHKH)
ns
1
tRZZ
ZZ inactive to input sampled
0
2(tKHKH)
ns
1
tZZI
ZZ active to snooze current
-
2(tKHKH)
ns
1
tRZZI
ZZ inactive to exit snooze current
0
ns
1
Note : 1. This parameter is sampled.
SLEEP Mode Waveform
CLK
tZZ
tRZZ
ZZ
tZZI
I
SUPPLY
IISB2Z
tRZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Output
(Q)
High-Z
: Don't Care
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A67L9318/A67L8336
READ/WRITE Timing
1
2
tKHKH
3
6
4
5
A3
A4
7
8
9
A5
A6
A7
10
CLK
tEVKH
tKHEX
tKHKL
tKLKH
CEN
tCVKH
tKHCX
CE
ADV/
LD
R/W
BWx
ADDRESS
A2
A1
tAVKH
tKHAX
tKHQV
tDVKH
I/O
tKHDX
D(A1)
D(A2)
tKHQX1
D(A2+1)
tKHQX
Q(A3)
tGLQV
Q(A4)
tKHQZ
Q(A4+1)
D(A5)
Q(A6)
WRITE
D(A7)
DESELECT
tKHQX
tGHQZ
tGLQX
OE
COMMAND
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
: Don't Care
: Undefined
Note : 1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BRST operations are optional.
3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated the most current data is used. The
most recent data may be from the input data register.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A67L9318/A67L8336
NOP, STALL and Deselect Cycles
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
CEN
CE
ADV/
LD
R/W
BWx
ADDRESS
A5
tKHQZ
I/O
D(A1)
Q(A2)
Q(A3)
D(A4)
Q(A5)
tKHQX
COMMAND
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
NOP
READ
Q(A5)
: Don't Care
DESELECT
CONTINUE
DESELECT
: Undefined
Note : 1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates CEN being used to create a “pause.” A WRITE is
not performed during this cycle.
2. For this waveform, ZZ and OE are tied LOW.
3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The
most recent data may be from the input data register.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A67L9318/A67L8336
Ordering Information
Part No.
Configure
Cycle Time / Access Time
Package
A67L9318E-4.2
7.5ns / 4.2ns
100L LQFP
A67L9318E-4.2F
7.5ns / 4.2ns
100L Pb-Free LQFP
A67L9318E-3.8
6.7ns / 3.8ns
100L LQFP
A67L9318E-3.8F
6.7ns / 3.8ns
100L Pb-Free LQFP
A67L9318E-3.5
6.0ns / 3.5ns
100L LQFP
6.0ns / 3.5ns
100L Pb-Free LQFP
A67L9318E-3.2
5.0ns / 3.2ns
100L LQFP
A67L9318E-3.2F
5.0ns / 3.2ns
100L Pb-Free LQFP
A67L9318E-2.8
4.4ns / 2.8ns
100L LQFP
A67L9318E-2.8F
4.4ns / 2.8ns
100L Pb-Free LQFP
A67L9318E-2.6
4.0ns / 2.6ns
100L LQFP
A67L9318E-2.6F
4.0ns / 2.6ns
100L Pb-Free LQFP
A67L8336E-4.2
7.5ns / 4.2ns
100L LQFP
A67L8336E-4.2F
7.5ns / 4.2ns
100L Pb-Free LQFP
A67L8336E-3.8
6.7ns / 3.8ns
100L LQFP
A67L8336E-3.8F
6.7ns / 3.8ns
100L Pb-Free LQFP
A67L8336E-3.5
6.0ns / 3.5ns
100L LQFP
6.0ns / 3.5ns
100L Pb-Free LQFP
A67L8336E-3.2
5.0ns / 3.2ns
100L LQFP
A67L8336E-3.2F
5.0ns / 3.2ns
100L Pb-Free LQFP
A67L8336E-2.8
4.4ns / 2.8ns
100L LQFP
A67L8336E-2.8F
4.4ns / 2.8ns
100L Pb-Free LQFP
A67L8336E-2.6
4.0ns / 2.6ns
100L LQFP
A67L8336E-2.6F
4.0ns / 2.6ns
100L Pb-Free LQFP
A67L9318E-3.5F
512K X 18
A67L8336E-3.5F
256K X 36
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.
A67L9318/A67L8336
Package Information
LQFP 100L Outline Dimensions
unit: inches/mm
HE
A2
A1
D
E
80
51
50
100
31
1
L1
L
HD
D
81
y
30
e
b
c
θ
Symbol
A1
Dimensions in inches
Dimensions in mm
Min.
Nom.
Max.
Min.
Nom.
Max.
0.002
-
0.006
0.05
-
0.15
A2
0.053
0.055
0.057
1.35
1.40
1.45
b
0.009
0.012
0.015
0.22
0.30
0.38
c
0.004
-
0.008
0.09
-
0.20
HE
0.866 BSC
E
0.787 BSC
20.00 BSC
HD
0.630 BSC
16.00 BSC
D
0.551 BSC
14.00 BSC
e
0.026 BSC
L
0.018
L1
0.024
22.00 BSC
0.65 BSC
0.030
0.45
0.039 REF
0.60
0.75
1.00 REF
y
-
-
0.004
-
-
0.10
θ
0°
3.5°
7°
0°
3.5°
7°
Notes:
1. Dimensions D and E do not include mold protrusion.
2. Dimensions b does not include dambar protrusion.
Total in excess of the b dimension at maximum material condition.
Dambar cannot be located on the lower radius of the foot.
PRELIMINARY
(July, 2005, Version 0.0)
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AMIC Technology, Corp.