FDA032N08 tm ® N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features Description • RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed cially tailored to minimize the on-state resistance and yet • Low Gate Charge maintain superior switching performance. • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Convertors / Synchronous Rectification • RoHS Compliant D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V -Continuous (TC = 25oC, Silicon Limited) 235* -Continuous (TC = 100oC, Silicon Limited) 165* -Continuous (TC = 25oC, Package Limited) 120 - Pulsed A (Note 1) 940 A (Note 2) 1995 mJ 5.5 V/ns (Note 3) (TC = 25oC) 375 W - Derate above 25oC 2.5 W/oC -55 to +175 oC 300 oC Ratings Units PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FDA032N08 75 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.4 RθCS Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FDA032N08 Rev. A oC/W 40 1 www.fairchildsemi.com FDA032N08 N-Channel PowerTrench® MOSFET January 2009 Device Marking FDA032N08 Device FDA032N08 Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 75 - - V - 0.05 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 75V, VGS = 0V - - 1 VDS = 75V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 2.5 3.2 mΩ - 180 - S ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 20V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 60V, ID = 75A VGS = 10V (Note 4, 5) - 11400 15160 pF - 1360 1810 pF - 595 800 pF - 169 220 nC - 60 - nC - 47 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 37.5V, ID = 75A RGEN = 25Ω, VGS = 10V (Note 4, 5) - 230 470 ns - 191 392 ns - 335 680 ns - 121 252 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 235 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 940 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time - 53 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/μs - 77 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA032N08 Rev. A 2 www.fairchildsemi.com FDA032N08 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3000 500 100 100 ID,Drain Current[A] ID,Drain Current[A] 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 1 o 175 C o 25 C 10 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.01 1 0.1 VDS,Drain-Source Voltage[V] 1 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage VGS = 10V 0.0025 VGS = 20V 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.0020 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 10000 1000 100 0.1 *Note: 1. VGS = 0V 2. f = 1MHz Crss 1 10 VDS, Drain-Source Voltage [V] 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 Capacitances [pF] 8 400 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 4 6 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.0030 FDA032N08 Rev. A o -55 C VDS = 15V VDS = 37.5V VDS = 60V 8 6 4 2 *Note: ID = 75A 0 80 0 3 50 100 150 Qg, Total Gate Charge [nC] 200 www.fairchildsemi.com FDA032N08 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 3000 250 1000 10μs 200 100μs 100 1ms 10ms DC Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 2.5 1 *Notes: o 1. TC = 25 C 0.1 150 100 50 Limited by package o 2. TJ = 175 C 3. Single Pulse 0.01 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 0.5 0.5 0.1 0.2 PDM 0.1 t2 *Notes: 0.02 0.01 o 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.005 -5 10 FDA032N08 Rev. A t1 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDA032N08 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDA032N08 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA032N08 Rev. A 5 www.fairchildsemi.com FDA032N08 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA032N08 Rev. A 6 www.fairchildsemi.com FDA032N08 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA032N08 Rev. 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