FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ Features Description • RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 33 nC( Typ.) • High Performance RDS(on) Trench Technology for Extremely Low Applications • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • RoHS Compliant D D G G S D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Unit V ±16 V - Continuous (TC = 25oC, Silicon Limited) Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 100oC, Silicon Limited) 90* 63* A - Continuous (TC = 25oC, Package Limited) 50 - Pulsed (Note 1) 360 A (Note 2) 72 mJ 2 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FDD050N03B 30 - Derate above 25oC 65 W 0.43 W/oC -55 to +175 oC 300 oC FDD050N03B Unit *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 2.3 (Note 5) 1 40 o C/W www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET March 2013 Device Marking FDD050N03B Device FDD050N03B Package D-PAK Reel Size 330mm Tape Width 16mm Quantity 2500 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 30 - - V - 13 - mV/oC Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250μA, VGS = 0V, TC = 25oC VDS = 24V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±16V, VDS = 0V - - ±100 nA VGS = VDS, ID = 250μA V ID = 250μA, Referenced to 25oC On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.25 2.0 3.0 VGS = 10V, ID = 25A - 3.7 5.0 VGS = 4.5V, ID = 15A - 5.2 8.1 VDS = 5V, ID = 50A - 169 - VDS = 15V, VGS = 0V f = 1MHz - 2160 2875 pF - 805 1070 pF - 85 130 pF - 33 43 nC - 7.8 - nC - 3.8 - nC - 4.6 - nC - 14.5 39 ns - 4.5 18 ns - 30 70 ns - 4.5 19 ns mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 50A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 15V, ID = 50A VGS = 10V, RGEN = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 90* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 360 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 50A - - 1.3 V trr Reverse Recovery Time - 33 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 50A dIF/dt = 100A/μs - 19 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 12A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics 5. When mounted on a 1 in2 pad of 2 oz copper ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 2 www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V 100 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 1000 10 o 175 C o 25 C 10 o -55 C 1 *Notes: 1. 250μs Pulse Test o 1 0.01 2. TC = 25 C 0.1 1 VDS, Drain-Source Voltage[V] 0.1 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1 2 3 4 VGS, Gate-Source Voltage[V] 5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 500 o RDS(ON) [mΩ], Drain-Source On-Resistance 9 IS, Reverse Drain Current [A] *Notes: TC = 25 C 8 7 VGS = 4.5V 6 5 VGS = 10V 4 3 0 50 100 150 ID, Drain Current [A] 200 *Notes: 1. VGS = 0V 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] o 25 C 10 1 0.2 3000 Coss 2000 o 175 C 250 Figure 5. Capacitance Characteristics 4000 100 Ciss *Notes: 1. VGS = 0V 2. f = 1MHz 1000 VDS = 6V VDS = 15V VDS = 24V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 0 30 3 *Notes: ID = 50A 0 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 35 www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area ID, Drain Current [A] ID, Drain Current [A] 80 100μs 1ms Operation in This Area is Limited by R DS(on) 10ms 100ms DC *Notes: 60 40 Limited by Package o 20 1. TC = 25 C o 0.1 0.1 200 100 100 1 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 400 10 *Notes: 1. VGS = 10V 2. ID = 25A 2. TJ = 175 C 3. Single Pulse o RθJC = 2.3 C/W 1 10 VDS, Drain-Source Voltage [V] 0 25 50 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 4 0.5 1 0.2 PDM 0.1 0.05 0.1 t1 0.02 *Notes: 0.01 o 1. ZθJC(t) = 2.9 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 t2 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDD050N03B N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 5 www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 6 www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 8 www.fairchildsemi.com FDD050N03B N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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