FAIRCHILD FDD050N03B

FDD050N03B
N-Channel PowerTrench® MOSFET
30 V, 90 A, 5.0 mΩ
Features
Description
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Fast Switching Speed
• Low Gate Charge, QG = 33 nC( Typ.)
• High Performance
RDS(on)
Trench Technology for Extremely Low
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• High Power and Current Handling Capability
• RoHS Compliant
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Parameter
Unit
V
±16
V
- Continuous (TC = 25oC, Silicon Limited)
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 100oC, Silicon Limited)
90*
63*
A
- Continuous (TC = 25oC, Package Limited)
50
- Pulsed
(Note 1)
360
A
(Note 2)
72
mJ
2
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FDD050N03B
30
- Derate above 25oC
65
W
0.43
W/oC
-55 to +175
oC
300
oC
FDD050N03B
Unit
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case, Max.
RθJA
Thermal Resistance, Junction to Ambient, Max.
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
2.3
(Note 5)
1
40
o
C/W
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
March 2013
Device Marking
FDD050N03B
Device
FDD050N03B
Package
D-PAK
Reel Size
330mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
30
-
-
V
-
13
-
mV/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250μA, VGS = 0V, TC = 25oC
VDS = 24V, VGS = 0V
-
-
1
μA
IGSS
Gate to Body Leakage Current
VGS = ±16V, VDS = 0V
-
-
±100
nA
VGS = VDS, ID = 250μA
V
ID = 250μA, Referenced to
25oC
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.25
2.0
3.0
VGS = 10V, ID = 25A
-
3.7
5.0
VGS = 4.5V, ID = 15A
-
5.2
8.1
VDS = 5V, ID = 50A
-
169
-
VDS = 15V, VGS = 0V
f = 1MHz
-
2160
2875
pF
-
805
1070
pF
-
85
130
pF
-
33
43
nC
-
7.8
-
nC
-
3.8
-
nC
-
4.6
-
nC
-
14.5
39
ns
-
4.5
18
ns
-
30
70
ns
-
4.5
19
ns
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
VDD = 15V, ID = 50A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 15V, ID = 50A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
90*
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
360
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 50A
-
-
1.3
V
trr
Reverse Recovery Time
-
33
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 50A
dIF/dt = 100A/μs
-
19
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 12A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. When mounted on a 1 in2 pad of 2 oz copper
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
2
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
100
ID, Drain Current[A]
ID, Drain Current[A]
1000
10
o
175 C
o
25 C
10
o
-55 C
1
*Notes:
1. 250μs Pulse Test
o
1
0.01
2. TC = 25 C
0.1
1
VDS, Drain-Source Voltage[V]
0.1
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1
2
3
4
VGS, Gate-Source Voltage[V]
5
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
500
o
RDS(ON) [mΩ],
Drain-Source On-Resistance
9
IS, Reverse Drain Current [A]
*Notes: TC = 25 C
8
7
VGS = 4.5V
6
5
VGS = 10V
4
3
0
50
100
150
ID, Drain Current [A]
200
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Capacitances [pF]
o
25 C
10
1
0.2
3000
Coss
2000
o
175 C
250
Figure 5. Capacitance Characteristics
4000
100
Ciss
*Notes:
1. VGS = 0V
2. f = 1MHz
1000
VDS = 6V
VDS = 15V
VDS = 24V
8
6
4
2
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
0
30
3
*Notes: ID = 50A
0
5
10
15
20
25
Qg, Total Gate Charge [nC]
30
35
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 10mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
ID, Drain Current [A]
ID, Drain Current [A]
80
100μs
1ms
Operation in This Area
is Limited by R DS(on)
10ms
100ms
DC
*Notes:
60
40
Limited by Package
o
20
1. TC = 25 C
o
0.1
0.1
200
100
100
1
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
400
10
*Notes:
1. VGS = 10V
2. ID = 25A
2. TJ = 175 C
3. Single Pulse
o
RθJC = 2.3 C/W
1
10
VDS, Drain-Source Voltage [V]
0
25
50
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
4
0.5
1
0.2
PDM
0.1
0.05
0.1
t1
0.02
*Notes:
0.01
o
1. ZθJC(t) = 2.9 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
t2
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
4
10
2
10
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDD050N03B N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
5
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
6
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
8
www.fairchildsemi.com
FDD050N03B N-Channel PowerTrench® MOSFET
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