FGH50T65UPD 650 V, 50 A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for easy Parallel Operating Using innovative field stop trench IGBT technology, Fairchild®’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential. • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 50 A • 100% of Parts Tested ILM(2) • High Input Impedance Applications • Tightened Parameter Distribution • RoHS Compliant • Solar Inverter, UPS, Welder, Digital Power Generator • Short-circuit Ruggedness > 5us @25oC • Telecom, ESS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) Collector Current @ TC = 25oC Collector Current @ TC = 100oC Unit 650 V ± 25 V 100 A 50 A 150 A 25oC 150 A 60 A Pulsed Collector Current ILM (2) Clamped Inductive Load Current @ TC = IF Diode Forward Current @ TC = 25oC Diode Forward Current o IFM(1) Ratings @ TC = 100 C Pulsed Diode Maximum Forward Current 30 A 150 A Maximum Power Dissipation @ TC = 25oC 340 W Maximum Power Dissipation @ TC = 100oC 170 W SCWT Short Circuit Withstand Time @ TC = 25oC 5 us TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds PD C oC 300 Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature 2: Ic = 150A, Vce = 400V, Rg = 10Ω Thermal Characteristics Typ. Max. Unit RθJC(IGBT) Symbol Thermal Resistance, Junction to Case Parameter - 0.44 oC/W RθJC(Diode) Thermal Resistance, Junction to Case - 1.2 o C/W RθJA Thermal Resistance, Junction to Ambient - 40 o C/W ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 1 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT April 2013 Device Marking Device Package FGH50T65UPD FGH50T65UPD TO-247 Eco Status Packing Type Qty per Tube - 30ea - For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 50mA, VCE = VGE 4.0 6.0 7.5 V IC = 50A, VGE = 15V - 1.65 2.3 V IC = 50A, VGE = 15V, TC = 175oC - 2.1 - V - 3540 4710 pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 110 146 pF - 60 90 pF Switching Characteristics td(on) Turn-On Delay Time - 32 41 ns tr Rise Time - 59 77 ns td(off) Turn-Off Delay Time - 160 208 ns tf Fall Time - 22 29 ns Eon Turn-On Switching Loss - 2.7 3.5 mJ Eoff Turn-Off Switching Loss - 0.74 0.96 mJ VCC = 400V, IC = 50A, RG = 6.0Ω, VGE = 15V, Inductive Load, TC = 25oC Ets Total Switching Loss - 3.44 4.46 mJ td(on) Turn-On Delay Time - 29 - ns tr Rise Time - 72 - ns td(off) Turn-Off Delay Time - 166 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.2 - mJ Ets Total Switching Loss - 4.7 - mJ TSC Short Circuit Withstand Time 5 - - us ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 VCC = 400V, IC = 50A, RG = 6.0Ω, VGE = 15V, Inductive Load, TC = 175oC VGE = 15V, VCC =400V, RG = 10Ω 2 - 19 - ns - 3.5 - mJ www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 50A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 Min. Typ. Max Unit - 230 345 nC - 31 47 nC - 130 195 nC Unit TC = 25°C unless otherwise noted Test Conditions IF = 30A IF = 30A, dIF/dt = 200A/μs 3 Min. Typ. Max TC = 25oC - 2.1 2.7 TC = 175oC - 1.78 - TC = 175oC - 46 - TC = 25oC V uJ - 41 53 TC = 175oC - 144 - TC = 25oC - 76 106 TC = 175oC - 486 - ns nC www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 150 20V 120 o 20V 12V Collector Current, IC [A] Collector Current, IC [A] 150 o TC = 25 C 15V 90 60 10V 30 15V TC = 175 C 120 12V 90 10V 60 30 VGE = 8V VGE = 8V 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 0 8 0 Figure 3. Typical Saturation Voltage Characteristics 150 Common Emitter VCE = 20V 120 Collector Current, IC [A] Common Emitter VGE = 15V Collector Current, IC [A] 8 Figure 4. Transfer Characteristics 150 o TC = 25 C o TC = 175 C 90 60 o 120 TC = 25 C o TC = 175 C 90 60 30 30 0 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 3 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 100A 3 50A 2 IC = 25A 1 25 6 9 12 Gate-Emitter Voltage,VGE [V] FGH50T65UPD Rev. C0 4 Common Emitter o TC = -40 C 16 12 8 50A 100A 4 IC = 25A 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] ©2012 Fairchild Semiconductor Corporation 15 Figure 6. Saturation Voltage vs. VGE 4 Collector-Emitter Voltage, VCE [V] 2 4 6 Collector-Emitter Voltage, VCE [V] 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 20 Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Common Emitter 16 12 8 50A 100A 4 IC = 25A 0 o TC = 175 C 16 12 8 50A 100A 4 IC = 25A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 30000 Common Emitter Gate-Emitter Voltage, VGE [V] Capacitance [pF] 1000 Coes Common Emitter VGE = 0V, f = 1MHz 100 o TC = 25 C 12 300V VCC = 400V 9 6 3 Cres TC = 25 C 0 30 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 250 10μs tr 100 Switching Time [ns] 100μs 1ms 10 ms DC 10 1 *Notes: o 1. TC = 25 C td(on) Common Emitter VCC = 400V, VGE = 15V IC = 50A 10 o TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 0.1 100 150 200 Gate Charge, Qg [nC] 1000 100 0.1 50 Figure 12. Turn-on Characteristics vs. Gate Resistance 1000 Collector Current, Ic [A] 200V o Cies 1 10 100 Collector-Emitter Voltage, VCE [V] ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 o TC = 175 C 1 1000 0 5 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 10000 tr Switching Time [ns] Switching Time [ns] 1000 td(off) 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 50A 10 100 td(on) 10 Common Emitter VGE = 15V, RG = 6Ω,Vcc = 400V o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 1 0 10 20 30 Gate Resistance, RG [Ω] 40 1 20 50 40 60 80 100 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 10000 Eon Switching Loss [uJ] Switching Time [ns] td(off) 100 10 tf Common Emitter VGE = 15V, RG = 6Ω, Vcc = 400V Eoff 1000 Common Emitter VCC = 400V, VGE = 15V IC = 50A o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 1 20 100 40 60 80 100 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 3 10 Collector Current, IC [A] Switching Loss [uJ] 100 Eon 4 10 Eoff Common Emitter VGE = 15V, RG = 6Ω 2 10 o TC = 25 C 10 Safe Operating Area o o TC = 175 C VGE = 15V, TC = 175 C 1 1 40 60 80 1 100 ©2012 Fairchild Semiconductor Corporation 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] FGH50T65UPD Rev. C0 50 300 5 20 20 30 40 Gate Resistance, RG [Ω] Figure 18. Turn off Switching SOA Characteristics 10 10 10 6 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequence 120 150 VCC = 400V load Current : peak of square wave 120 Collector Current, IC A] Collector Current, Ic [A] 100 80 60 40 20 o TC = 100 C 90 60 Duty cycle : 50% 30 o T = 100 C C Powe Dissipation = 170 W 0 0 25 50 75 100 125 150 o Case temperature, TC [ C] 175 0 1k 200 10k 100k 1M Switching Frequency, f [Hz] Figure 21. Forward Characteristics Figure 22. Reverse Recovery Current 200 10 Reverse Recovery Currnet, Irr [A] o Forward Current, IF [A] 100 o TC = 175 C o TC = 75 C 10 o TC = 25 C TC = 25 C o TC = 175 C 8 200A/μs 6 di/dt = 100A/μs 200A/μs 4 di/dt = 100A/μs 2 0 0 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 3.0 0 Figure 23. Stored Charge 20 30 IC [A] 40 50 60 Figure 24. Reverse Recovery Time 600 250 o o TC = 25 C Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 10 o 500 TC = 175 C 200A/μs 400 300 di/dt = 100A/μs 200 200A/μs 100 di/dt = 100A/μs 0 0 10 20 30 40 Forwad Current, IF [A] ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 50 TC = 25 C o TC = 175 C 200 100A/μs 150 di/dt = 200A/μs 100 100A/μs 50 di/dt = 200A/μs 0 60 0 10 20 30 40 50 60 Forward Current, IF [A] 7 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Typical Performance Characteristics FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 25. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1E-5 1E-4 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 8 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT Mechanical Dimensions TO - 247A03 ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FGH50T65UPD Rev. C0 10 www.fairchildsemi.com FGH50T65UPD 650 V 50 A Field Stop Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® AX-CAP * FRFET PowerTrench SM BitSiC™ Global Power Resource PowerXS™ TinyBoost™ Build it Now™ Green Bridge™ Programmable Active Droop™ TinyBuck™ CorePLUS™ Green FPS™ QFET® TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ SmartMax™ EfficentMax™ MegaBuck™ TRUECURRENT®* SMART START™ ESBC™ MICROCOUPLER™ μSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™