FAIRCHILD FGA30N65SMD

FGA30N65SMD
650 V, 30 A Field Stop IGBT
Features
General Description
o
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and
switching losses are essential.
• Maximum Junction Temperature : TJ =175 C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Induction Heating
• Telecom, ESS
C
G
TO-3PN
G CE
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Description
Ratings
Unit
Collector to Emitter Voltage
650
V
Gate to Emitter Voltage
 20
V
 30
V
Collector Current
@ TC = 25oC
60
A
Collector Current
@ TC = 100oC
30
A
90
A
Transient Gate to Emitter Voltage
Pulsed Collector Current
o
Diode Forward Current
@ TC = 25 C
40
A
Diode Forward Current
@ TC = 100oC
20
A
120
A
Maximum Power Dissipation
@ TC = 25oC
300
W
Maximum Power Dissipation
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
150
W
-55 to +175
o
-55 to +175
oC
300
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
1
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
July 2013
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.5
oC/W
RJC(Diode)
Thermal Resistance, Junction to Case
-
1.5
o
RJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA30N65SMD
FGA30N65SMD
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
-
0.29
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250A, VCE = VGE
VGE = 0V, IC = 250A
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
3.5
4.8
6.0
V
IC = 30A, VGE = 15V
-
1.98
2.5
V
IC = 30A, VGE = 15V,
TC = 175oC
-
2.29
-
V
-
1350
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
130
-
pF
-
45
-
pF
-
14
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
28
-
ns
td(off)
Turn-Off Delay Time
-
102
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
208
-
uJ
Ets
Total Switching Loss
-
924
-
uJ
td(on)
Turn-On Delay Time
-
13
-
ns
tr
Rise Time
-
28
-
ns
td(off)
Turn-Off Delay Time
-
108
-
ns
tf
Fall Time
-
17
-
ns
Eon
Turn-On Switching Loss
-
1125
-
uJ
Eoff
Turn-Off Switching Loss
-
572
-
uJ
Ets
Total Switching Loss
-
1697
-
uJ
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
VCC = 400V, IC = 30A,
RG = 6, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 30A,
RG = 6, VGE = 15V,
Inductive Load, TC = 175oC
2
-
10
-
ns
-
716
-
uJ
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 30A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
Parameter
Min.
Typ.
Max
Unit
-
87
-
nC
-
9.1
-
nC
-
45
-
nC
Min.
Typ.
Max
Unit
TC = 25°C unless otherwise noted
Test Conditions
o
TC = 25 C
-
2.1
2.6
-
1.83
-
Diode Forward Voltage
Erec
Reverse Recovery Energy
TC = 175oC
-
55
-
trr
Diode Reverse Recovery Time
TC = 25oC
-
35
-
TC = 175oC
-
182
-
Qrr
Diode Reverse Recovery Charge
TC = 25oC
-
59
-
o
-
587
-
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
IF = 20A
TC = 175oC
VFM
IF =20A, dIF/dt = 200A/s
TC = 175 C
3
V
uJ
ns
nC
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
90
90
o
10V
60
45
30
VGE = 8V
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
VGE = 8V
30
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, VCE [V]
6.0
Common Emitter
VCE = 20V
75
o
Collector Current, IC [A]
Collector Current, IC [A]
45
90
Common Emitter
VGE = 15V
TC = 25 C
o
TC = 175 C
45
30
o
TC = 25 C
o
TC = 175 C
60
45
30
15
15
0
0.0
0
1.0
2.0
3.0
4.0
Collector-Emitter Voltage, VCE [V]
0
5.0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
3.5
60A
3.0
2.5
30A
2.0
IC = 15A
1.5
75
100
125
150
o
Case Temperature, TC [ C]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
VGE = 15V
50
2
12
Figure 6. Saturation Voltage vs. VGE
4.0
Collector-Emitter Voltage, VCE [V]
60
Figure 4. Transfer Characteristics
90
1.0
25
10V
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
60
12V
15
15
75
15V
75
Collector Current, IC [A]
Collector Current, IC [A]
TC = 175 C
12V
15V
75
20V
o
20V
TC = 25 C
o
TC = -40 C
15
30A
IC = 15A
4
60A
10
5
0
175
Common Emitter
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
15
30A
60A
IC = 15A
10
5
0
TC = 175 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
IC = 30A
60A
15A
8
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
10000
Common Emitter
Gate-Emitter Voltage, VGE [V]
Capacitance [pF]
o
Cies
1000
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25 C
12
200V
VCC = 100V
9
6
3
Cres
o
TC = 25 C
0
20
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
25
50
75
Gate Charge, Qg [nC]
100
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10s
tr
100s
10
1ms
10ms
DC
Switching Time [ns]
Collector Current, Ic [A]
300V
1
*Notes:
0.1
o
1. TC = 25 C
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
10
o
o
2. TJ = 175 C
3. Single Pulse
TC = 25 C
o
TC = 175 C
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
3
1000
5
0
10
20
30
Gate Resistance, RG []
40
50
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
1000
td(off)
Switching Time [ns]
Switching Time [ns]
100
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
10
tr
td(on)
10
Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
o
TC = 25 C
o
TC = 175 C
o
TC = 175 C
1
0
10
20
30
Gate Resistance, RG []
40
1
10
50
20
30
Figure 15. Turn-off Characteristics vs.
Collector Current
60
70
80
10000
td(off)
Eon
Switching Loss [uJ]
100
Switching Time [ns]
50
Figure 16. Switching Loss vs.
Gate Resistance
500
tf
10
Common Emitter
VGE = 15V, RG = 6
1000
Eoff
Common Emitter
VCC = 400V, VGE = 15V
100
IC = 30A
o
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
10
40
Collector Current, IC [A]
20
30
40
50
60
TC = 175 C
70
10
80
0
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10
20
30
40
Gate Resistance, RG []
50
Figure 18. Turn off Switching
SOA Characteristics
100
10000
Eon
Collector Current, IC [A]
Switching Loss [uJ]
1000
Eoff
100
Common Emitter
VGE = 15V, RG = 6
10
o
10
1
TC = 25 C
Safe Operating Area
o
o
TC = 175 C
1
10
0.1
20
30
Collector Current, IC [A]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
VGE = 15V, TC = 175 C
1
40
6
10
100
Collector-Emitter Voltage, VCE [V]
1000
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Power Dissipation
80
300
60
40
20
0
25
50
75
100
125
150
o
Case Temperature, TC [ C]
200
150
100
50
0
25
175
Figure 21. Load Current Vs. Frequency
50
75
100
125
150
o
Case Temperature, TC [ C]
175
Figure 22. Forward Characteristics
350
60
Square Wave
o
TJ < 175 C, D = 0.5, VCE = 400V
300
VGE = 15/0V, RG = 6
o
Forward Current, IF [A]
Collector Current, IC A]
Common Emitter
VGE = 15V
250
Power Dissipation, PD [w]
Collector Current, IC [A]
Common Emitter
VGE = 15V
250
200
o
TC = 75 C
150
o
o
TC = 25 C
TC = 100 C
100
TJ = 175 C
10
o
TJ = 25 C
o
TJ = 100 C
1
50
0
1k
10k
100k
0.1
1M
0
1
2
3
Forward Voltage, VF [V]
Switching Frequency, f [Hz]
Figure 23. Reverse Current
Figure 24. Reverse Recovery Current
1000
8
Reverse Recovery Currnet, Irr [A]
Reverse Current , IR [A]
100
o
TJ = 175 C
10
1
o
TJ = 100 C
0.1
o
TJ = 25 C
0.01
50
6
di/dt = 200A/s
4
di/dt = 100A/s
2
o
TC = 25 C
o
TC = 175 C
0
200
400
Reverse Voltage, VR [V]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
4
600
7
5
10
15
20
25
30
Forward Current, IF [A]
35
40
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Typical Performance Characteristics
Figure 25. Stored Charge
Figure 26. Reverse Recovery Time
300
800
o
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [nC]
o
TC = 25 C
o
TC = 175 C
600
400
di/dt = 200A/s
di/dt = 100A/s
200
TC = 25 C
o
250
TC = 175 C
200
150
di/dt = 200A/s
100
di/dt = 100A/s
50
0
0
5
10
15
20
25
30
Forwad Current, IF [A]
35
5
40
10
15
20
25
30
Forward Current, IF [A]
35
40
Figure 27.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.003
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 28.Transient Thermal Impedance of Diode
Thermal Response [Zthjc]
2
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
8
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Typical Performance Characteristics
FGA30N65SMD 650 V, 30 A Field Stop IGBT
Mechanical Dimensions
TO-3PN
TO-3P 3L - 3LD,TO3,PLASTIC,EIAJ SC-65 (Active)
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©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
9
www.fairchildsemi.com
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Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
10
www.fairchildsemi.com
FGA30N65SMD 650 V, 30 A Field Stop IGBT
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