FAIRCHILD FCA47N60_F109

SuperFET
TM
FCH47N60 / FCA47N60 / FCA47N60_F109
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Fairchild's proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• Typ. Rds(on)=0.058Ω
• Ultra low gate charge (typ. Qg=210nC)
• Low effective output capacitance (typ. Coss.eff=420pF)
• 100% avalanche tested
D
G
G D
S
TO-247
FDH Series
TO-3P
FDA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
FCH47N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
FCA47N60
Unit
600
V
47
29.7
A
A
(Note 1)
141
A
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
1800
mJ
IAR
Avalanche Current
(Note 1)
47
A
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
4.5
V/ns
417
3.33
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev.B2
1
Typ.
Max.
Unit
--
0.3
°C/W
0.24
--
--
41.7
°C/W
www.fairchildsemi.com
FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
August 2007
Device Marking
Device
Package
FCH47N60
FCH47N60
TO-247
-
-
30
FCA47N60
FCA47N60
TO-3P
-
-
30
FCA47N60
FCA47N60_F109
TO-3PN
-
-
30
Electrical Characteristics
Symbol
Reel Size
Tape Width
Quantity
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 23.5A
--
0.058
0.07
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
40
--
S
--
5900
8000
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
3200
4200
pF
--
250
--
pF
VDS = 480V, VGS = 0V, f = 1.0MHz
--
160
--
pF
VDS = 0V to 400V, VGS = 0V
--
420
--
pF
VDD = 300V, ID = 47A
RG = 25Ω
--
185
430
ns
--
210
450
ns
--
520
1100
ns
--
75
160
ns
--
210
270
nC
--
38
--
nC
--
110
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 47A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
47
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
141
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 47A
--
--
1.4
V
trr
Reverse Recovery Time
--
590
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/µs
--
25
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 47A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
2
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
2
ID , Drain Current [A]
2
10
1
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
0
10
-1
0
10
10
150℃
1
10
-55℃
※ Note
1. VDS = 40V
2. 250µ s Pulse Test
0
10
2
1
10
25℃
10
4
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.20
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.15
VGS = 10V
0.10
VGS = 20V
0.05
0
20
40
60
80
100
120
140
160
180
2
10
1
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0
200
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
1.0
1.2
1.4
1.6
Figure 6. Gate Charge Characteristics
30000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
20000
VDS = 100V
VGS, Gate-Source Voltage [V]
25000
Coss
15000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
10000
0
-1
10
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
5000
25℃
10
※ Note : TJ = 25℃
0.00
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Crss
0
10
10
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 47A
0
1
0
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
10
3
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 47 A
0.5
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
100 us
40
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
10 ms
1
10
DC
0
10
※ Notes :
o
1. TC = 25 C
-1
10
0
10
20
10
o
2. TJ = 150 C
3. Single Pulse
-2
10
30
1
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [℃]
Zθ JC(t), Thermal Response
Figure 10. Transient Thermal Response Curve
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C( t) = 0 .3 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
-2
10
0 .0 1
-5
t2
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
4
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
5
www.fairchildsemi.com
FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
6
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
7
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.00 ±0.20
16.50 ±0.30
3.00 ±0.20
+0.15
1.50 –0.05
3.50 ±0.20
2.00 ±0.20
4.80 ±0.20
3.80 ±0.20
9.60 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
8
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
9
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
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This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
10
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
TRADEMARKS