BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS–”. 2. BB501C is individual type number of HITACHI BBFET. BB501C Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate2 to source voltage VG2S +6 –0 V Drain current ID 20 mA Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V I D = 200µA VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +6 — — V I G1 = +10µA VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +6 — — V I G2 = +10µA VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +5V VG2S = VDS = 0 Gate2 to source cutoff current I G2SS — — +100 nA VG2S = +5V VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.5 0.7 1.0 V VDS = 5V, VG2S = 4V I D = 100µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5V, VG1S = 5V I D = 100µA Drain current I D(op) 7 10 13 mA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 47kΩ Forward transfer admittance |yfs| 19 24 29 mS VDS = 5V, VG1 = 5V VG2S =4V RG = 47kΩ, f = 1kHz Input capacitance c iss 1.4 1.7 2.0 pF VDS = 5V, VG1 = 5V Output capacitance c oss 0.7 1.1 1.5 pF VG2S =4V, RG = 47kΩ Reverse transfer capacitance c rss — 0.019 0.04 pF f = 1MHz Power gain 17 21.5 — dB VDS = 5V, VG1 = 5V PG VG2S =4V, RG = 47kΩ Noise figure 2 NF — 1.85 2.4 dB f = 900MHz BB501C Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Application Circuit V DS = 5 V VAGC = 4 to 0.3 V BBFET RFC Output Input RG V GG = 5 V 3 BB501C 900MHz Power Gain, Noise Test Circuit VD VG1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC D G2 Output L3 L4 G1 Input S L1 L2 C1 C1, C2 : C3 : C4∼C6 : R1 : R2 : R3 : C2 Variable Capacitor(10pF MAX) Disk Capacitor(1000pF) Air Capacitor(1000pF) 47 kΩ 47 kΩ 4.7 kΩ L2: L1: 10 3 3 8 10 26 (φ1mm Copper wire) Unit:mm 21 L4: 10 10 18 29 7 7 L3: RFC:φ1mm Copper wire with enamel 4turns inside dia 6mm 4 Typical Output Characteristics 20 I D (mA) 200 Maximum Channel Power Dissipation Curve 150 Drain Current Channel Power Dissipation Pch (mW) BB501C 100 50 0 50 100 150 Ambient Temperature V G2S = 4 V V G1 = VDS 16 12 4 Ta (°C) I D (mA) V DS = 5 V R G = 33 kΩ 4V 3V Drain Current I D (mA) Drain Current kΩ 27 Ω k 33 k Ω 39 Ω k 47 k Ω 56 k Ω 68 k Ω 82 kΩ 100 4 5 V DS (V) 20 12 2V 8 4 VG2S = 1 V 0 1 2 3 Drain to Source Voltage kΩ Drain Current vs. Gate1 Voltage Drain Current vs. Gate1 Voltage 20 16 = 8 0 200 R G 22 1 2 Gate1 Voltage 3 V G1 4 (V) V DS = 5 V R G = 47 kΩ 16 12 8 3V 4V 2V 4 VG2S = 1 V 5 0 1 2 3 Gate1 Voltage V G1 4 (V) 5 5 BB501C Forward Transfer Admittance |y fs | (mS) Drain Current vs. Gate1 Voltage Drain Current I D (mA) 20 16 V DS = 5 V R G = 68 kΩ 12 8 4V 3V 2V 4 VG2S = 1 V 0 1 2 V G1 (V) 30 24 30 24 V DS = 5 V R G = 47 kΩ f = 1 kHz 4V 3V 18 2V 12 6 VG2S = 1 V 1 2 3 4 Gate1 Voltage V G1 (V) 5 4V 3V 2V 12 6 VG2S = 1 V 0 5 V DS = 5 V R G = 33 kΩ f = 1 kHz 18 Forward Transfer Admittance vs. Gate1 Voltage 0 6 4 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) Gate1 Voltage 3 Forward Transfer Admittance vs. Gate1 Voltage 1 2 3 4 Gate1 Voltage V G1 (V) 5 Forward Transfer Admittance vs. Gate1 Voltage 30 24 V DS = 5 V R G = 68 kΩ f = 1 kHz 4V 3V 18 2V 12 6 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage V G1 (V) 5 BB501C Noise Figure vs. Gate Resistance Power Gain vs. Gate Resistance 4 25 Noise Figure NF (dB) Power Gain PG (dB) 30 20 15 10 5 0 10 VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz 20 50 Gate Resistance R G (k Ω ) 3 2 1 0 10 100 Power Gain vs. Drain Current Noise Figure NF (dB) Power Gain PG (dB) 20 15 0 0 100 4 25 5 20 50 Gate Resistance R G (k Ω ) Noise Figure vs. Drain Current 30 10 VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 Drain Current I D (mA) 20 3 2 VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 1 0 0 5 10 15 20 Drain Current I D (mA) 7 BB501C Power Gain vs. Gate2 to Source Voltage Drain Current vs. Gate Resistance 25 10 VDS = VG1 = 5 V VG2S = 4 V 5 0 10 Noise Figure NF (dB) 5 4 20 20 15 10 V DS = 5 V R G = 47 kΩ f = 900 MHz 5 50 0 1 100 2 4 3 Gate Resistance R G (k Ω ) Gate2 to Source Voltage V G2S (V) Noise Figure vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage V DS = 5 V R G = 47 kΩ f = 900 MHz 3 2 1 1 8 Power Gain PG (dB) 15 4 Input Capacitance Ciss (pF) Drain Current I D (mA) 20 3 2 1 0 4 2 3 Gate2 to Source Voltage V G2S (V) V DS = 5 V R G = 47 kΩ f = 1 MHz 0 1 2 3 Gate2 to Source Voltage V G2S (V) 4 BB501C Gain Reduction vs. Gate2 to Source Voltage Gain Reduction GR (dB) 0 10 20 30 V DS = V G1 = 5 V V G2S = 4 V R G = 47 kΩ 40 50 4 3 2 1 0 Gate2 to Source Voltage V G2S (V) 9 BB501C S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 ∼ 1000 MHz (50 MHz step) 50 ∼ 1000 MHz (50 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.002 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 ∼ 1000 MHz (50 MHz step) 10 –2 –.6 –.8 –1 –1.5 Test Condition: V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 47 k Ω , Zo = 50 Ω 50 ∼ 1000 MHz (50 MHz step) BB501C Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 47kΩ, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.974 –2.8 2.40 176.4 0.00057 78.1 0.997 –2.0 100 0.974 –10.0 2.38 172.2 0.00144 82.4 0.998 –4.2 150 0.974 –13.6 2.38 168.4 0.00211 78.7 0.997 –6.0 200 0.965 –16.5 2.37 164.1 0.00316 84.8 0.995 –8.1 250 0.963 –20.0 2.35 160.4 0.00358 76.3 0.994 –10.2 300 0.953 –23.7 2.32 156.8 0.00431 84.0 0.992 –12.2 350 0.947 –26.8 2.30 152.9 0.00503 79.0 0.990 –14.2 400 0.942 –29.6 2.28 148.6 0.00545 76.6 0.987 –16.2 450 0.929 –32.8 2.26 144.9 0.00630 80.3 0.984 –18.1 500 0.923 –35.4 2.21 141.2 0.00646 76.1 0.981 –20.2 550 0.912 –38.5 2.19 137.6 0.00693 73.7 0.977 –22.1 600 0.903 –41.2 2.15 134.2 0.00732 72.9 0.974 –24.1 650 0.886 –44.2 2.12 130.6 0.00729 74.6 0.971 –26.0 700 0.879 –46.8 2.08 127.4 0.00733 72.0 0.967 –27.8 750 0.873 –49.2 2.06 124.3 0.00762 74.5 0.962 –29.7 800 0.859 –52.4 2.03 120.8 0.00756 73.7 0.959 –31.7 850 0.846 –55.4 2.00 117.3 0.00772 75.5 0.955 –33.6 900 0.836 –58.0 1.96 114.3 0.00775 79.6 0.951 –35.5 950 0.827 –60.4 1.93 111.0 0.00801 81.7 0.946 –37.3 1000 0.815 –62.8 1.89 108.0 0.00704 81.0 0.942 –39.4 11 BB501C Package Dimensions Unit: mm 1.3 0.65 0.65 + 0.1 + 0.1 0.3 – 0.05 0.3 – 0.05 3 0.425 2.0 ±0.2 + 0.1 0.16 – 0.06 1.25 2.1 ±0.3 2 0 ~ 0.1 1 4 + 0.1 0.4 – 0.05 0.65 0.6 0.425 + 0.1 0.3 – 0.05 0.9 ±0.1 0.2 1.25 12 Hitahi Code EIAJ JEDEC CMPAK-4 SC-82AB — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.