ETC BB303C

BB303C
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-698B (Z)
3rd. Edition
Mar. 2001
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343 var.)
Outline
CMPAK-4
2
3
1
4
Notes:
1.
2.
1. Source
2. Gate1
3. Gate2
4. Drain
Marking is “CW –”.
BB303C is individual type number of HITACHI BBFET.
BB303C
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
7
V
Gate1 to source voltage
VG1S
– 0/ +7
V
Gate2 to source voltage
VG2S
– 0/ +7
V
Drain current
ID
25
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
7
—
—
V
I D = 200µA
VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V(BR)G1SS
+7
—
—
V
I G1 = +10µA
VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
+7
—
—
V
I G2 = +10µA
VG1S = VDS = 0
Gate1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +5V
VG2S = VDS = 0
Gate2 to source cutoff current I G2SS
—
—
+100
nA
VG2S = +5V
VG1S = VDS = 0
Gate1 to source cutoff voltage VG1S(off)
0.3
0.6
0.9
V
VDS = 5V, VG2S = 4V
I D = 100µA
Gate2 to source cutoff voltage VG2S(off)
0.5
0.8
1.1
V
VDS = 5V, VG1S = 5V
I D = 100µA
Drain current
I D(op)
9
14
20
mA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 470kΩ
Forward transfer admittance
|yfs|
35
42
50
mS
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 470kΩ, f = 1kHz
Input capacitance
c iss
2.6
3.3
4.0
pF
VDS = 5V, VG1 = 5V
Output capacitance
c oss
1.7
2.1
2.5
pF
VG2S =4V, RG = 470kΩ
Reverse transfer capacitance c rss
—
0.025
0.05
pF
f = 1MHz
Power gain
28
32
—
dB
VDS = 5V, VG1 = 5V
PG1
VG2S =4V, RG = 470kΩ
Noise figure
NF1
—
1.0
1.6
dB
f = 200MHz
Power gain
PG2
12
16.5
—
dB
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 470kΩ
Noise figure
2
NF2
—
2.85
3.7
dB
f = 900MHz
BB303C
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
200MHz Power Gain, Noise Figure Test Circuit
VT
VG2
VT
1000p
1000p
47k
1000p
47k
1000p
47k
BBFET
Output(50Ω)
1000p
L2
Input(50Ω)
L1
10p max
1000p
1000p
36p
1SV70
RG
RFC
470k
1SV70
1000p
V D = V G1
Unit : Resistance (Ω)
Capacitance (F)
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φΠΛ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BB303C
900MHz Power Gain, Noise Figure Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
D
G2
Output
L3
G1
Input
S
L1
L2
C1
C1, C2
C3
C4 to C6
R1
R2
R3
L1 :
L4
C2
:
:
:
:
:
:
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
470Ω
47 kΩ
4.7 kΩ
L2 :
26
L4 :
18
10
29
10
7
L3 :
(f1mm Copper wire)
Unit : mm
25
7
10
3
3
8
10
RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm
4
Drain Current
100
50
0
50
100
150
18
0k
22 Ω
27 0 kΩ
0
kΩ
15
10
5
Ta (°C)
1.4 V
I D (mA)
1.2 V
10
1.1 V
1.0 V
0
VG1S = 0.9 V
1
2
3
Drain to Source Voltage
4
V DS
4V
V DS = 5 V
1.3 V
15
1
2
3
Drain to Source Voltage
25
VG2S = 4 V
1.5 V
820 kΩ
Ω
1.5 M
Ω
2.2 M
4
5
V DS (V)
Drain Current vs.
Gate1 to Source Voltage
Drain Current vs.
Drain to Source Voltage
20
5
0
200
kΩ
0
33 kΩ
0
39
Ω
0k
47 kΩ
0
56 kΩ
0
8
6
G=
20
1 MΩ
25
I D (mA)
V G2S = 4 V
V G1 = VDS
R
150
Ambient Temperature
Drain Current
Typical Output Characteristics
25
I D (mA)
200
Maximum Channel Power
Dissipation Curve
Drain Current
Channel Power Dissipation
Pch (mW)
BB303C
2V
3.5 V
3V
15
1.5 V
10
5
VG2S = 1 V
5
(V)
20
2.5 V
0
4.0
8.0
1.2
Gate1 to Source Voltage
1.6
2.0
VG1S (V)
5
BB303C
V
12
G1
V
=5
V
4.5
4V
V
3.5
3V
I D (mA)
16
V DS = 5 V
RG = 470 k Ω
20
Drain Current
Drain Current
I D (mA)
20
Drain Current vs.
Gate2 to Source Voltage
8
4
0
1 2
3
Gate2 to Source Voltage
16
8
4
Drain Current vs. Gate1 Current
50
(µA)
I G1
20
1
2
3
4
Gate1 Voltage V G1 (V)
5
Gate1 Current vs.
Gate1 to Source Voltage
V DS = 5 V
V DS = 5 V
VG2S = 4 V
15
Gate1 Current
Drain Current
I D (mA)
25
V DS = 5 V
VG2S = 4 V
R G = 470 kΩ
12
0
4
5
VG2S (V)
Drain Current vs. Gate1 Voltage
10
5
40
4 V 3.5 V
30
3V
2.5 V
2V
20
1.5 V
10
VG2S = 1 V
0
6
10
20
Gate1 Current
30
I G1
40
(µA)
50
0
0.4
0.8
1.2
Gate1 to Source Voltage
1.6
2.0
V G1S (V)
BB303C
Gate1 Current vs.
Gate2 to Source Voltage
VG1 = 5 V
4.5 V
4V
6
3.5 V
3V
4
2.5 V
2V
2
0
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance |y fs | (mS)
8
V DS = 5 V
RG = 470 k Ω
50
40
1.0 2.0
3.0
Gate2 to Source Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
V DS = 5 V
RG = 470 k Ω
V DS = 5 V
VG2S = 4 V
4V
3V
2.5 V
30
20
10
VG2S = 2 V
5
10
15
20
Drain Current I D (mA)
25
Power Gain vs. Gate Resistance
35
3V
2V
20
10
30
25
20
15
1V
1
2
3
4
Gate1 Voltage VG1 (V)
3.5 V
40
40
30
0
50
0
4.0
5.0
V G2S (V)
Power Gain PG (dB)
Gate1 Current
I G1
(µA)
10
Forward Transfer Admittance
vs. Drain Current
5
10
0.1
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
f = 200 MHz
0.2
0.5
1
2
5
10
Gate Resistance R G (M Ω )
7
BB303C
Power Gain vs. Drain Current
Noise Figure vs. Gate Resistance
40
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
f = 200 MHz
3
Power Gain PG (dB)
Noise Figure NF (dB)
4
2
1
35
30
25
20
15
0
0.1
0.2
0.5
1
2
5
10
0
10
Gate Resistance R G (M Ω )
Noise Figure vs. Drain Current
20
1
5
10
15
20
25
Drain Current I D (mA)
8
30
Power Gain PG (dB)
Noise Figure NF (dB)
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
R G = variable
f = 200 MHz
2
0
5
10
15
20
25
30
Drain Current I D (mA)
4
3
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
R G = variable
f = 200 MHz
Power Gain vs. Gate Resistance
15
10
5
0
0.1
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
f = 900 MHz
0.2
0.5
1
2
5
10
Gate Resistance R G (M Ω )
BB303C
Power Gain vs. Drain Current
Noise Figure vs. Gate Resistance
20
Power Gain PG (dB)
Noise Figure NF (dB)
4
3
2
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
f = 900 MHz
1
0
0.1
0.2
0.5
1
2
5
15
10
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
R G = variable
f = 900 MHz
5
0
10
5
Gate Resistance R G (M Ω )
20
25
30
Gain Reduction vs.
Gate2 to Source Voltage
4
60
Gain Reduction GR (dB)
Noise Figure NF (dB)
15
Drain Current I D (mA)
Noise Figure vs. Drain Current
3
2
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
R G = variable
f = 900 MHz
1
0
10
5
10
15
20
25
Drain Current I D (mA)
V DS = V G1 = 5 V
V G2S = 4 V
R G = 470 k Ω
f = 200 MHz
50
40
30
20
10
30
0
0
1
2
3
5
4
Gate2 to Source Voltage V G2S (V)
9
BB303C
Gain Reduction vs.
Gate2 to Source Voltage
Drain Current vs. Gate Resistance
35
V DS = V G1 = 5 V
V G2S = 4 V
R G = 470 k Ω
f = 900 MHz
40
Drain Current I D (mA)
Gain Reduction GR (dB)
50
30
20
10
30
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
25
20
15
10
5
0
1
2
3
4
5
Gate2 to Source Voltage V G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
Input Capacitance Ciss (pF)
4
3
2
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
R G = 470 k Ω
f = 1 MHz
1
0
1
2
3
Gate2 to Source Voltage V G2S (V)
10
4
0
0.1
0.2
0.5
1
2
5
Gate Resistance R G (M Ω )
10
BB303C
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Test Condition : V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
Test Condition : V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.002 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition : V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
–2
–.6
–.8
–1
–1.5
Test Condition : V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 470 k Ω
Zo =50 Ω
50 to 1000 MHz (50 MHz step)
11
BB303C
Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 470kΩ, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
0.947
–7.0
4.11
174.4
0.00400
89.0
0.985
–3.1
100
0.978
–11.9
4.13
167.1
0.00305
116.5
0.985
–6.8
150
0.973
–18.7
4.04
159.8
0.00266
75.5
0.982
–10.1
200
0.960
–23.8
4.01
152.7
0.00384
66.8
0.978
–13.5
250
0.956
–29.6
3.90
146.4
0.00453
70.1
0.970
–16.8
300
0.939
–35.5
3.85
139.9
0.00440
59.6
0.965
–20.0
350
0.930
–40.3
3.68
133.6
0.00550
67.2
0.957
–23.1
400
0.905
–45.7
3.63
128.3
0.00571
59.0
0.949
–26.2
450
0.889
–50.3
3.45
122.7
0.00583
54.2
0.940
–29.2
500
0.870
–55.6
3.35
116.6
0.00634
51.6
0.932
–32.1
550
0.855
–59.6
3.22
111.5
0.00596
56.2
0.924
–35.0
600
0.841
–63.9
3.10
106.3
0.00591
55.7
0.917
–37.7
650
0.826
–67.9
3.02
101.4
0.00544
54.9
0.908
–40.5
700
0.812
–71.8
2.89
96.1
0.00533
57.2
0.900
–43.1
750
0.799
–75.6
2.78
91.8
0.00495
64.6
0.893
–45.7
800
0.788
–78.9
2.70
87.5
0.00470
66.5
0.887
–48.1
850
0.778
–82.6
2.60
82.2
0.00460
75.1
0.880
–50.6
900
0.765
–85.8
2.48
78.1
0.00445
83.8
0.874
–52.9
950
0.763
–88.8
2.41
74.2
0.00486
97.0
0.869
–55.3
1000
0.748
–92.2
2.34
69.7
0.00502
102.6
0.864
–57.5
12
BB303C
Package Dimensions
As of January, 2001
Unit: mm
0.1
0.3 +– 0.05
0.2
0.65 0.6
1.25 ± 0.2
0.9 ± 0.1
0.1
0.4 +– 0.05
0 – 0.1
0.425
0.1
0.3 +– 0.05
+ 0.1
0.16– 0.06
2.1 ± 0.3
0.65 0.65
1.25 ± 0.1
0.1
0.3 +– 0.05
0.425
2.0 ± 0.2
1.3 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
CMPAK-4(T)
—
Conforms
0.006 g
13
BB303C
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
14