3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 14 V Gate 1 to source voltage VG1S ±8 V Gate 2 to source voltage VG2S ±8 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C 2 3SK300 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 14 — — V I D = 200 µA, VG1S = –3 V, VG2S = –3 V Gate 1 to source breakdown voltage V(BR)G1SS ±8 — — V I G1 = ±10 µA, VDS = VG2S = 0 Gate 2 to source breakdown voltage V(BR)G2SS ±8 — — V I G2 = ±10 µA, VDS = VG1S = 0 Gate 1 cutoff current I G1SS — — ±100 nA VG1S = ±6 V, VDS = VG2S = 0 Gate 2 cutoff current I G2SS — — ±100 nA VG2S = ±6 V, VDS = VG1S = 0 Drain current I DS(op) 4 8 14 mA VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V Gate 1 to source cutoff voltage VG1S(off) 0 +0.2 +1.0 V VDS = 10 V, VG2S = 3 V, I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) 0 +0.3 +1.0 V VDS = 10 V, VG1S = 3 V, I D = 100 µA Forward transfer admittance |yfs| 20 25 — ms VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 kHz Input capacitance Ciss 2.4 3.1 3.5 pF VDS = 6 V, Output capacitance Coss 0.8 1.1 1.4 pF VG2S = 3 V, ID = 10 mA Reverse transfer capacitance Crss — 0.021 0.04 pF f = 1 MHz Power gain PG 24 27.6 — dB VDS = 6 V, VG2S = 3 V, Noise figure NF — 1.0 1.5 dB I D = 10 mA, f = 200 MHz Power gain PG 12 15.6 — dB VDS = 6 V, VG2S = 3 V, Noise figure NF — 3.0 4.0 dB I D = 10 mA, f = 900 MHz Noise figure NF — 2.7 3.5 dB VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 60 MHz Note: Marking is “ZR–” 3 3SK300 Main Characteristics 20 200 Typical Output Characteristics 1.2 V VG2S = 3 V Pulse test 16 Drain current ID (mA) Channel power dissipation Pch (mW) Maximum Channel Power Dissipation Curve 150 100 50 1.0 V 12 0.8 V 8 4 VG1S = 0.4 V 0 50 100 150 200 0 Drain Current vs. Gate1 to Source Voltage 20 3.0 V VDS = 6 V 2.5 V Pulse test 2.0 V 16 1.5 V 12 8 1.0 V 4 Drain current ID (mA) Ambient Temperature Ta (°C) Drain current ID (mA) 0.6 V 2 4 6 8 Drain to source voltage VDS (V) 10 Drain Current vs. Gate2 to Source Voltage 20 3.0 V 2.0 V VDS = 6 V Pulse test 2.5 V 16 1.5 V 12 1.0 V 8 4 VG1S = 0.5 V 0 1 2 3 4 5 Gate2 to source voltage VG2S (V) VG2S = 0.5 V 0 4 1 2 3 4 5 Gate1 to source voltage VG1S (V) 3SK300 VDS = 6 V f = 1kHz 3V 2.5 V 18 2V 12 1.5 V 6 VDS = 6 V VG2S = 3V f = 200MHz 40 24 30 20 10 1V VG2S = 0.5 V 0 0.4 0.8 1.2 1.6 2 Gate1 to source voltage VG1S (V) 0 Noise Figure vs. Drain Current VDS = 6 V VG2S = 3V f = 200MHz 3 2 1 0 4 8 12 16 Drain current ID (mA) 8 12 16 Drain current ID (mA) 20 20 VG2S = 3V ID = 10mA f = 200MHz 40 Power gain PG (dB) 4 4 Power Gain vs. Drain to Source Voltage 50 5 Noise figure NF (dB) Power Gain vs. Drain Current 50 30 Power gain PG (dB) Forward transfer admittance |yfs| (ms) Forward Transfer Admittance vs. Gate1 to Source Voltage 30 20 10 0 2 4 6 8 10 Drain to source voltage VDS (V) 5 3SK300 20 VG2S = 3V ID = 10mA f = 200MHz 4 Noise figure NF (dB) Power Gain vs. Drain Current Noise Figure vs. Drain to Source Voltage 16 Power gain PG (dB) 5 3 2 1 0 12 8 4 2 4 6 8 0 10 Drain to source voltage VDS (V) 5 8 12 16 20 Power Gain vs. Drain to Source Voltage Noise Figure vs. Drain Current 20 16 Power gain PG (dB) Noise figure NF (dB) 6 4 Drain current ID (mA) 4 3 2 VDS = 6V VG2S = 3V f = 900MHz 1 0 VDS = 6V VG2S = 3V f = 900MHz 4 8 12 16 Drain current ID (mA) 12 8 VG2S = 3V ID = 10mA f = 900MHz 4 20 0 2 4 6 8 Drain to source voltage VDS (V) 10 3SK300 5 VG2S = 3V I D = 10mA f = 900MHz 8 4 2 0 VDS = 6V VG2S = 3V f = 60MHz 4 6 3 2 1 2 4 6 8 Drain to source voltage VDS (V) 5 4 Noise figure NF (dB) Noise figure NF (dB) Noise Figure vs. Drain Current Noise Figure vs. Drain to Source Voltage Noise figure NF (dB) 10 10 0 4 8 12 16 20 Drain current ID (mA) Noise Figure vs. Drain to Source Voltage VG2S = 3V ID = 10mA f = 60MHz 3 2 1 0 2 4 6 8 10 Drain to source voltage VDS (V) 7 3SK300 Package Dimentions Unit: mm + 0.3 2.8 – 0.1 + 0.1 0.4 – 0.05 0.4 – 0.05 3 0.65 – 0.3 + 0.1 + 0.1 1.9 0.95 0.95 + 0.1 0.16 – 0.06 + 0.2 2.8 – 0.6 1.5 2 0 ~ 0.1 0.95 0.85 0.65– 0.3 + 0.1 0.6 – 0.05 + 0.1 1 4 + 0.1 0.4 – 0.05 + 0.2 1.1– 0.1 0.3 1.8 8 Hitachi Code EIAJ JEDEC MPAK–4 SC–61AA — Cautions 1. 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