ON Semiconductor NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VEBO Rating Voltage and current are negative for PNP transistors Vdc 6.0 5.0 Base Current IB 250 mAdc Collector Current – Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 2 BASE NPN 1 EMITTER COLLECTOR 3 2 BASE PNP 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 250 350 – – 250 350 – – 6.0 5.0 – – Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)CEO 2N6515 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6520 Vdc 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 3 1 Publication Order Number: 2N6515/D NPN 2N6515 2N6517 PNP 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max – – 50 50 – – 50 50 2N6515 2N6517, 2N6520 35 20 – – (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 – – (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 300 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 45 20 220 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 25 15 – – – – – – 0.30 0.35 0.50 1.0 – – – 0.75 0.85 0.90 Characteristic Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6517, 2N6520 ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6520 nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE – Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) – 2.0 Vdc fT 40 200 MHz Ccb – 6.0 pF – – 80 100 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6520 pF SWITCHING CHARACTERISTICS Turn–On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton – 200 µs Turn–Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff – 3.5 µs 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NPN 2N6515 2N6517 PNP 2N6520 hFE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125°C 100 25°C 70 -55°C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain – NPN 2N6515 VCE = 10 V 100 200 TJ = 125°C VCE = -10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25°C 70 50 -55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 30 20 50 TJ = 25°C VCE = 20 V f = 20 MHz 20 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 70 2.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. DC Current Gain – PNP 2N6520 100 10 1.0 -55°C 50 Figure 2. DC Current Gain – NPN 2N6517 30 25°C 70 10 -1.0 50 70 100 TJ = 125°C Figure 4. Current–Gain – Bandwidth Product – NPN 2N6515, 2N6517 100 70 50 30 TJ = 25°C VCE = -20 V f = 20 MHz 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Current–Gain – Bandwidth Product – PNP 2N6520 http://onsemi.com 3 NPN 2N6515 2N6517 PNP 2N6520 NPN 1.4 -1.4 TJ = 25°C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 2.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 0 -1.0 IC 10 IB 2.0 1.5 1.0 25°C to 125°C 0.5 0 RθVC for VCE(sat) -55°C to 25°C -0.5 -1.0 -55°C to 125°C -1.5 RθVB for VBE -2.0 -2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Temperature Coefficients – NPN 2N6515, 2N6517 Ceb 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 2.5 2.0 1.5 IC 10 IB 25°C to 125°C 1.0 0.5 0 RθVB for VBE -55°C to 25°C -0.5 -1.0 -1.5 -2.0 -2.5 -1.0 100 70 50 TJ = 25°C 30 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) RθVC for VCE(sat) -55°C to 125°C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 9. Temperature Coefficients – PNP 2N6520 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 VCE(sat) @ IC/IB = 10 Figure 7. “On” Voltages – PNP 2N6520 RθV, TEMPERATURE COEFFICIENTS (mV/°C) RθV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 6. “On” Voltages – NPN 2N6515, 2N6517 2.5 TJ = 25°C Ceb TJ = 25°C 30 20 10 7.0 5.0 Ccb 3.0 2.0 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 -0.2 50 100 200 Figure 10. Capacitance – NPN 2N6515, 2N6517 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance – PNP 2N6520 http://onsemi.com 4 -100 -200 NPN 2N6515 2N6517 PNP 2N6520 td @ VBE(off) = 2.0 V t, TIME (ns) 300 200 1.0k 700 500 VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C tr 100 70 50 30 20 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 10 -1.0 70 100 Figure 12. Turn–On Time – NPN 2N6515, 2N6517 10k 7.0k 5.0k 2.0k ts t, TIME (ns) 500 tf -50 -70 -100 ts 1.0k 700 2.0k tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 200 100 70 50 300 200 100 1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 13. Turn–On Time – PNP 2N6520 3.0k 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 TJ = 25°C 100 70 50 30 2.0 tr 200 20 10 1.0 td @ VBE(off) = 2.0 V 300 t, TIME (ns) 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 Figure 14. Turn–Off Time – NPN 2N6515, 2N6517 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 15. Turn–Off Time – PNP 2N6520 http://onsemi.com 5 NPN 2N6515 2N6517 PNP 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 Ω SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH ≈ 100 µs tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 16. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 SINGLE PULSE 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25°C 200 100 PP 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25°C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 tP 1.0 ms TC = 25°C 50 FIGURE A 10 µs 100 µs 0.5 1.0 PP t1 2N6515 1/f t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Active Region Safe Operating Area 500 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 6 NPN 2N6515 2N6517 PNP 2N6520 PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- NPN 2N6515 2N6517 PNP 2N6520 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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