Order this document by 2N4400/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 — Vdc Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 — Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV — 0.1 µAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX — 0.1 µAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4401 hFE 20 — — (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4400 2N4401 20 40 — — (IC = 10 mAdc, VCE = 1.0 Vdc) 2N4400 2N4401 40 80 — — (IC = 150 mAdc, VCE = 1.0 Vdc) 2N4400 2N4401 50 100 150 300 (IC = 500 mAdc, VCE = 2.0 Vdc) 2N4400 2N4401 20 40 — — Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) — — 0.4 0.75 Vdc Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.75 — 0.95 1.2 Vdc 200 250 — — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 2N4400 2N4401 MHz Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 6.5 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 30 pF 0.5 1.0 7.5 15 0.1 8.0 20 40 250 500 hoe 1.0 30 µmhos (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td — 15 ns tr — 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts — 225 ns tf — 30 ns Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2N4400 2N4401 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre k ohms X 10–4 hfe 2N4400 2N4401 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V +16 V 0 – 2.0 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 Ω +16 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 Ω 0 1.0 kΩ < 2.0 ns CS* < 10 pF 1.0 kΩ –14 V < 20 ns CS* < 10 pF – 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time 2 Figure 2. Turn–Off Time Motorola Small–Signal Transistors, FETs and Diodes Device Data TRANSIENT CHARACTERISTICS 25°C 100°C 10 7.0 5.0 30 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, CHARGE (nC) CAPACITANCE (pF) 20 QA 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 20 Figure 3. Capacitances 100 IC/IB = 10 70 VCC = 30 V IC/IB = 10 70 tr 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 30 tf 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 300 500 3 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 2.0 IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C selected from both the 2N4400 and 2N4401 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly numhfe and other “h” parameters for this series of transistors. To bered curves on each graph. obtain these curves, a high–gain and a low–gain unit were 300 hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 50 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hie , INPUT IMPEDANCE (OHMS) 50 k 2.0 k 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Figure 11. Current Gain Figure 12. Input Impedance 5.0 7.0 10 100 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 5.0 k IC, COLLECTOR CURRENT (mA) 10 4 10 k IC, COLLECTOR CURRENT (mA) 7.0 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 20 k 500 5.0 7.0 10 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 50 20 10 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5.0 7.0 10 Motorola Small–Signal Transistors, FETs and Diodes Device Data STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 – 55°C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.2 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 + 0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) – 0.5 – 1.0 – 1.5 qVB for VBE – 2.0 0 0.1 0.2 qVC for VCE(sat) 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 0.8 100 200 500 Figure 17. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data – 2.5 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 Figure 18. Temperature Coefficients 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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