Order this document by 2N4402/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV — 0.1 µAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX — 0.1 µAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4403 hFE 30 — (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4402 2N4403 30 60 — — (IC = 10 mAdc, VCE = 1.0 Vdc) 2N4402 2N4403 50 100 — — (IC = 150 mAdc, VCE = 2.0 Vdc)(1) 2N4402 2N4403 50 100 150 300 Both 20 — — — 0.4 0.75 0.75 — 0.95 1.3 150 200 — — (IC = 500 mAdc, VCE = 2.0 Vdc)(1) Collector – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) — VCE(sat) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 2N4402 2N4403 MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 8.5 Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 30 Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie pF pF ohms 750 1.5 k 7.5 k 15 k 0.1 8.0 30 60 250 500 hoe 1.0 100 µmhos (VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td — 15 ns tr — 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) ts — 225 ns tf — 30 ns 2N4402 2N4403 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre X 10–4 hfe 2N4402 2N4403 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V – 30 V 200 Ω < 2 ns +2 V +14 V 0 0 1.0 kΩ – 16 V 10 to 100 µs, DUTY CYCLE = 2% Figure 1. Turn–On Time 2 200 Ω < 20 ns CS* < 10 pF 1.0 kΩ –16 V CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 2. Turn–Off Time Motorola Small–Signal Transistors, FETs and Diodes Device Data TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 VCC = 30 V IC/IB = 10 Ceb 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.1 0.2 0.3 20 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 30 10 20 Figure 3. Capacitances 300 500 Figure 4. Charge Data 100 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 300 500 200 t s′, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ 6 4 2 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 IC = 50 µA 100 µA 500 µA 1.0 mA 6 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50 k h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C selected from both the 2N4402 and 2N4403 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly– hfe and other “h” parameters for this series of transistors. To numbered curves on each graph. obtain these curves, a high–gain and a low–gain unit were 100 k 700 50 k hfe , CURRENT GAIN 500 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 100 70 50 hie , INPUT IMPEDANCE (OHMS) 1000 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 Figure 10. Current Gain Figure 11. Input Impedance 5.0 7.0 10 500 10 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 4 0.2 IC, COLLECTOR CURRENT (mAdc) 20 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 IC, COLLECTOR CURRENT (mAdc) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 20 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance 5.0 7.0 10 Motorola Small–Signal Transistors, FETs and Diodes Device Data STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 qVC for VCE(sat) 0.5 1.0 1.5 qVS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 16. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 2.5 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 17. Temperature Coefficients 5 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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