October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description Features The FDFS6N303 incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. This product is particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. 6 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V. RDS(ON) = 0.055 Ω @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications. SuperSOTTM-6 SOT-23 D C C SuperSOTTM-8 D FS FD 303 6N SO-8 SOIC-16 SOT-223 A 1 8 C A 2 7 C S 3 6 D G 4 5 D G SO-8 pin 1 A A MOSFET Maximum Ratings Symbol Parameter S TA = 25oC unless otherwise noted FDFS6N303 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous 6 A (Note 1a) - Pulsed PD 30 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) (Note 1c) TJ,TSTG Operating and Storage Temperature Range Schottky Diode Maximum Ratings VRRM Repetitive Peak Reverse Voltage IO Average Forward Current © 2003 Fairchild Semiconductor Corporation W 1.6 0.9 -55 to 150 °C 30 V 2 A TA = 25oC unless otherwise noted (Note 1a) FDFS6N303 Rev. D3 Electrical Characteristics (TA = 25 oC unless otherwise noted ) MOSFET ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V Typ IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance Units 1 µA V TJ =125°C VGS(th) Max 20 µA 100 nA -100 nA 1.7 3 V VGS = 10 V, I D = 6 A 0.025 0.035 Ω VGS = 4.5 V, I D = 4.8 A 0.043 0.055 1 VDS = 10 V, ID = 6 A 12 S ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 350 f = 1.0 MHz 220 pF 80 pF 15 A pF Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS = 15 V, ID = 6 A, VGS = 10 V 12 17 nC VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 7.5 15 ns 12 25 ns tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time 13 25 ns tf Turn - Off Fall Time 6 15 ns MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A 0.8 (Note 2) 1.3 A 1.2 V SCHOTTKY DIODE CHARACTERISTICS BV Reverse Breakdown Voltage IR = 1 mA IR Reverse Leakage VR = 30 V 30 0.5 mA V VF Forward Voltage mV IF = 0.1 A 280 IF = 3 A 420 IF = 6 A 500 THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDFS6N303 Rev. D3 Typical Electrical Characteristics VGS= 10V 3 6.0V 20 R DS(ON) , NORMALIZED 5.0V 25 4.5V 15 4.0V 10 3.5V 5 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) 30 2.5 VGS = 4.0V 2 4.5V 5.0V 1.5 6.0V 7.0V 10V 1 3.0V 0.5 0 0 1 2 3 4 0 5 10 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.2 1 0.8 0.075 0 25 50 75 100 125 150 TA = 125°C 0.05 0.025 0 -25 25°C 2 4 I S , REVERSE DRAIN CURRENT (A) I D , DRAIN CURRENT (A) TA = -55°C 25°C 25 125°C 20 15 10 5 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 10 7 VGS = 0V 10 1 TA = 125°C 25°C 0.1 -55°C 0.01 0.001 0.0001 1 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 VDS = 5V 6 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 0 30 I D = 3A TJ , JUNCTION TEMPERATURE (°C) 30 25 0.1 ID = 6A VGS = 10V 1.4 0.6 -50 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.6 15 I D , DRAIN CURRENT (A) V DS , DRAIN-SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS6N303 Rev. D3 Typical Fet And Schottky Electrical Characteristics 1000 I D = 6.0A V DS = 5V CAPACITANCE (pF) 8 10V 15V 6 4 500 Ciss Coss 200 100 2 0 2 4 6 8 10 12 14 0.3 1 3 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 IR , REVERSE CURRENT (A) 1 TJ = 125°C 1 0.1 Crss f = 1 MHz VGS = 0V 50 0.1 0 25°C 0 0.1 0.2 0.3 0.4 V F , FORWARD VOLTAGE (V) 0.5 TJ = 125°C 0.1 0.01 0.001 25°C 0.0001 0.00001 0.6 0 5 10 15 20 VR , REVERSE VOLTAGE (V) 25 30 Figure 10. Schottky Diode Reverse Current. Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I F , FORWARD CURRENT (A) V GS , GATE-SOURCE VOLTAGE (V) 10 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA =135° C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDFS6N303 Rev. D3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5