Order this document by MPS5179/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage VCBO 20 Vdc Emitter – Base Voltage VEBO 2.5 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 200 1.14 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.71 mW mW/°C Storage Temperature Range Tstg – 55 to +150 °C 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) VCEO(sus) 12 — Vdc Collector – Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) V(BR)CBO 20 — Vdc Emitter – Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) V(BR)EBO 2.5 — Vdc — — 0.02 1.0 hFE 25 250 — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.4 Vdc Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — 1.0 Vdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150°C) µAdc ICBO ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS5179 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit fT 900 2000 MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Ccb — 1.0 pF Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) hfe 25 300 — rb′Cc 3.0 14 ps Noise Figure (See Figure 1) (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz) NF — 5.0 dB Common–Emitter Amplifier Power Gain (See Figure 1) (VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz) Gpe 15 — dB SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) Collector Base Time Constant (IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz) 1. fT is defined as the frequency at which |hfe| extrapolates to unity. TYPE 1N3195 DC COMMON TYPE 1N3195 L3 1200 FROM 50 Ω SOURCE 0.02 µF Cin 3.0 – 35 2.0 – 10 C7 1.0 – 5.0 91 Q L1 C2 2.0 – 10 10 k –VEE 1200 EXTERNAL SHIELD TO 50 Ω LOAD 2.0 – 10 C6 L2 0.1 µF 0.001 µF RFC 1.0 µH 0.1 µF +VCC 1200 L1 1–3/4 Turns, #18 AWG, 0.5″ L, 0.5″ Diameter L2 2 Turns, #16 AWG, 0.5″ L, 0.5″ Diameter L3 2 Turns, #13 AWG, 0.25″ L, 0.5″ Diameter (Position 1/4″ from L2) Figure 1. 200 MHz Amplifier Power Gain and Noise Figure Circuit 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS5179 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 MPS5179 Motorola reserves the right to make changes without further notice to any products herein. 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