Order this document by MPSL51/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Base Voltage VCBO –100 Vdc Emitter – Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –100 — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –100 — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –4.0 — Vdc Collector Cutoff Current (VCB = –50 Vdc, IE = 0) ICBO — –1.0 µAdc Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) IEBO — –100 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSL51 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit DC Current Gain(1) (IC = –50 mAdc, VCE = –5.0 Vdc) hFE 40 250 — Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VCE(sat) — — –0.25 –0.30 Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) — — –1.2 –1.2 fT 60 — MHz Cobo — 8.0 pF hfe 20 — — ON CHARACTERISTICS(1) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSL51 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 – 55°C VCE = – 1.0 V VCE = – 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region IC, COLLECTOR CURRENT ( µA) 103 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10–1 10–2 REVERSE 25°C 10–3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.6 0.7 Figure 3. Collector Cut–Off Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSL51 1.0 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 1.5 1.0 0.5 θVC for VCE(sat) 0 –0.5 –1.0 –1.5 θVB for VBE(sat) –2.0 –2.5 0.1 100 TJ = – 55°C to 135°C 2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 10.2 V 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 3.0 k RC Vout RB 5.1 k Vin 100 C, CAPACITANCE (pF) 100 70 50 VCC –30 V 100 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 1000 700 500 20 Figure 7. Capacitances tr @ VCC = 120 V 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 10 2000 IC/IB = 10 TJ = 25°C 300 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 300 IC/IB = 10 TJ = 25°C tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 4 100 Figure 5. Temperature Coefficients VBB + 8.8 V Vin 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn–On Time Figure 9. Turn–Off Time 50 100 200 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSL51 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 MPSL51 Motorola reserves the right to make changes without further notice to any products herein. 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